KR101492287B1 - 편평하게 조사된 보정광을 이용한 광학 소자의 보정 - Google Patents

편평하게 조사된 보정광을 이용한 광학 소자의 보정 Download PDF

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Publication number
KR101492287B1
KR101492287B1 KR1020097022341A KR20097022341A KR101492287B1 KR 101492287 B1 KR101492287 B1 KR 101492287B1 KR 1020097022341 A KR1020097022341 A KR 1020097022341A KR 20097022341 A KR20097022341 A KR 20097022341A KR 101492287 B1 KR101492287 B1 KR 101492287B1
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South Korea
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optical
optical element
light
correcting
mirror
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Korean (ko)
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KR20100015913A (ko
Inventor
자샤 블라이디스텔
만프레드 마울
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칼 짜이스 에스엠테 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
    • G02B27/0068—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration having means for controlling the degree of correction, e.g. using phase modulators, movable elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/028—Mountings, adjusting means, or light-tight connections, for optical elements for lenses with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/293—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection by another light beam, i.e. opto-optical deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Nonlinear Science (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020097022341A 2007-03-27 2008-03-26 편평하게 조사된 보정광을 이용한 광학 소자의 보정 Active KR101492287B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007014699 2007-03-27
DE102007014699.1 2007-03-27
PCT/EP2008/053577 WO2008116886A1 (de) 2007-03-27 2008-03-26 Korrektur optischer elemente mittels flach eingestrahltem korrekturlicht

Publications (2)

Publication Number Publication Date
KR20100015913A KR20100015913A (ko) 2010-02-12
KR101492287B1 true KR101492287B1 (ko) 2015-02-11

Family

ID=39645288

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KR1020097022341A Active KR101492287B1 (ko) 2007-03-27 2008-03-26 편평하게 조사된 보정광을 이용한 광학 소자의 보정

Country Status (5)

Country Link
US (4) US8760744B2 (enExample)
JP (1) JP5329520B2 (enExample)
KR (1) KR101492287B1 (enExample)
DE (1) DE102008016011A1 (enExample)
WO (1) WO2008116886A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008016011A1 (de) 2007-03-27 2008-10-02 Carl Zeiss Smt Ag Korrektur optischer Elemente mittels flach eingestrahltem Korrekturlicht
US20100290020A1 (en) * 2009-05-15 2010-11-18 Shinichi Mori Optical apparatus, exposure apparatus, exposure method, and method for producing device
DE102010041298A1 (de) 2010-09-24 2012-03-29 Carl Zeiss Smt Gmbh EUV-Mikrolithographie-Projektionsbelichtungsanlage mit einer Heizlichtquelle
DE102012216284A1 (de) * 2011-09-27 2013-03-28 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
DE102011088740A1 (de) * 2011-12-15 2013-01-17 Carl Zeiss Smt Gmbh Optisches System, sowie Verfahren zum Manipulieren des thermischen Zustandes eines optischen Elementes in einer mikrolithographischen Projektionsbelichtungsanlage
DE102014203189A1 (de) * 2014-02-21 2015-08-27 Carl Zeiss Smt Gmbh Spiegel-Array
US9823573B2 (en) 2015-07-02 2017-11-21 Applied Materials, Inc. Correction of non-uniform patterns using time-shifted exposures
DE102016213025A1 (de) 2016-07-18 2016-09-08 Carl Zeiss Smt Gmbh Steuerung für Mikrospiegelanordnungen in Lithographiesystemen
JP6827785B2 (ja) 2016-11-30 2021-02-10 キヤノン株式会社 インプリント装置、インプリント方法、および物品の製造方法
US11079564B2 (en) 2017-07-20 2021-08-03 Cymer, Llc Methods and apparatuses for aligning and diagnosing a laser beam
DE102021102254A1 (de) * 2021-02-01 2022-08-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische anordnung
DE102021201689A1 (de) * 2021-02-23 2022-08-25 Carl Zeiss Smt Gmbh Optische Baugruppe, Verfahren zur Deformation eines optischen Elements und Projektionsbelichtungsanlage
DE102022212570A1 (de) 2022-11-24 2023-12-14 Carl Zeiss Smt Gmbh Heizvorrichtung und optisches System, insbesondere EUV-Lithographiesystem

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010024798A (ko) * 1997-12-26 2001-03-26 오노 시게오 투영노광장치 및 노광방법
KR20030021127A (ko) * 2001-09-05 2003-03-12 칼 짜이스 세미컨덕터 매뉴팩츄어링 테크놀로지즈 악티엔게젤샤프트 투영 조명 시스템
KR20030051624A (ko) * 2000-11-22 2003-06-25 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
KR20060097714A (ko) * 2003-09-26 2006-09-14 칼 짜이스 에스엠테 아게 마이크로 리소그래피 투영 노출

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69220868T2 (de) 1991-09-07 1997-11-06 Canon K.K., Tokio/Tokyo System zur Stabilisierung der Formen von optischen Elementen, Belichtungsvorrichtung unter Verwendung dieses Systems und Verfahren zur Herstellung von Halbleitervorrichtungen
JPH06302491A (ja) * 1993-04-15 1994-10-28 Nikon Corp 露光量制御装置
JP3463335B2 (ja) 1994-02-17 2003-11-05 株式会社ニコン 投影露光装置
US5995263A (en) 1993-11-12 1999-11-30 Nikon Corporation Projection exposure apparatus
JP3368091B2 (ja) 1994-04-22 2003-01-20 キヤノン株式会社 投影露光装置及びデバイスの製造方法
JPH0845827A (ja) 1994-07-28 1996-02-16 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
JP3576685B2 (ja) * 1996-02-07 2004-10-13 キヤノン株式会社 露光装置及びそれを用いたデバイスの製造方法
JPH09232213A (ja) * 1996-02-26 1997-09-05 Nikon Corp 投影露光装置
EP0816894A3 (en) * 1996-07-01 1999-01-20 Seiko Epson Corporation Optical scanning apparatus
EP0823662A2 (en) 1996-08-07 1998-02-11 Nikon Corporation Projection exposure apparatus
JP3790833B2 (ja) 1996-08-07 2006-06-28 株式会社ニコン 投影露光方法及び装置
JP3646757B2 (ja) 1996-08-22 2005-05-11 株式会社ニコン 投影露光方法及び装置
US5852490A (en) 1996-09-30 1998-12-22 Nikon Corporation Projection exposure method and apparatus
JPH10256150A (ja) 1997-03-14 1998-09-25 Nikon Corp 走査露光方法及び走査型露光装置
US6091461A (en) * 1997-08-14 2000-07-18 Sony Corporation Electronically self-aligning high resolution projection display with rotating mirrors and piezoelectric transducers
US7274430B2 (en) 1998-02-20 2007-09-25 Carl Zeiss Smt Ag Optical arrangement and projection exposure system for microlithography with passive thermal compensation
JP4106478B2 (ja) * 1998-03-06 2008-06-25 株式会社オーク製作所 多ビーム走査型露光装置
US7112772B2 (en) 1998-05-29 2006-09-26 Carl Zeiss Smt Ag Catadioptric projection objective with adaptive mirror and projection exposure method
DE19827602A1 (de) * 1998-06-20 1999-12-23 Zeiss Carl Fa Verfahren zur Korrektur nicht-rotationssymmetrischer Bildfehler
DE19827603A1 (de) 1998-06-20 1999-12-23 Zeiss Carl Fa Optisches System, insbesondere Projektions-Belichtungsanlage der Mikrolithographie
DE19859634A1 (de) 1998-12-23 2000-06-29 Zeiss Carl Fa Optisches System, insbesondere Projektionsbelichtungsanlage der Mikrolithographie
JP3548464B2 (ja) 1999-09-01 2004-07-28 キヤノン株式会社 露光方法及び走査型露光装置
DE19956354B4 (de) 1999-11-24 2004-02-19 Carl Zeiss Verfahren zum Ausgleich von nicht rotationssymmetrischen Abbildungsfehlern in einem optischen System
DE19956353C1 (de) 1999-11-24 2001-08-09 Zeiss Carl Optische Anordnung
DE19963587B4 (de) 1999-12-29 2007-10-04 Carl Zeiss Smt Ag Projektions-Belichtungsanlage
DE19963588C2 (de) 1999-12-29 2002-01-10 Zeiss Carl Optische Anordnung
DE10000193B4 (de) 2000-01-05 2007-05-03 Carl Zeiss Smt Ag Optisches System
DE10000191B8 (de) * 2000-01-05 2005-10-06 Carl Zeiss Smt Ag Projektbelichtungsanlage der Mikrolithographie
DE10140208C2 (de) * 2001-08-16 2003-11-06 Zeiss Carl Optische Anordnung
EP1442330A1 (en) 2001-11-09 2004-08-04 Carl Zeiss SMT AG Tilting mirror
US6984917B2 (en) * 2002-06-06 2006-01-10 Lucent Technologies Inc. Optical element having two axes of rotation for use in tightly spaced mirror arrays
US20050099611A1 (en) 2002-06-20 2005-05-12 Nikon Corporation Minimizing thermal distortion effects on EUV mirror
US20030235682A1 (en) * 2002-06-21 2003-12-25 Sogard Michael R. Method and device for controlling thermal distortion in elements of a lithography system
DE10325461A1 (de) * 2003-06-05 2004-12-30 Carl Zeiss Sms Gmbh Verfahren und Anordnung zur Realisierung einer schaltbaren optischen Apertur
WO2005022614A1 (ja) 2003-08-28 2005-03-10 Nikon Corporation 露光方法及び装置、並びにデバイス製造方法
JP4692753B2 (ja) * 2004-02-13 2011-06-01 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
JP5266641B2 (ja) 2004-08-31 2013-08-21 株式会社ニコン 露光装置及びデバイス製造方法
JP2006073584A (ja) * 2004-08-31 2006-03-16 Nikon Corp 露光装置及び方法並びにデバイス製造方法
JP2006128194A (ja) * 2004-10-26 2006-05-18 Canon Inc 露光装置及びデバイス製造方法
US20080204682A1 (en) * 2005-06-28 2008-08-28 Nikon Corporation Exposure method and exposure apparatus, and device manufacturing method
DE102008016011A1 (de) * 2007-03-27 2008-10-02 Carl Zeiss Smt Ag Korrektur optischer Elemente mittels flach eingestrahltem Korrekturlicht
WO2009152959A1 (en) 2008-06-17 2009-12-23 Carl Zeiss Smt Ag Projection exposure apparatus for semiconductor lithography comprising a device for the thermal manipulation of an optical element
US20100290020A1 (en) * 2009-05-15 2010-11-18 Shinichi Mori Optical apparatus, exposure apparatus, exposure method, and method for producing device
DE102010041528A1 (de) * 2010-09-28 2012-03-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit
DE102011004375B3 (de) * 2011-02-18 2012-05-31 Carl Zeiss Smt Gmbh Vorrichtung zur Führung von elektromagnetischer Strahlung in eine Projektionsbelichtungsanlage
KR101693950B1 (ko) 2011-09-29 2017-01-06 칼 짜이스 에스엠테 게엠베하 마이크로리소그래피 투영 노광 장치의 투영 대물 렌즈

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010024798A (ko) * 1997-12-26 2001-03-26 오노 시게오 투영노광장치 및 노광방법
KR20030051624A (ko) * 2000-11-22 2003-06-25 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
KR20030021127A (ko) * 2001-09-05 2003-03-12 칼 짜이스 세미컨덕터 매뉴팩츄어링 테크놀로지즈 악티엔게젤샤프트 투영 조명 시스템
KR20060097714A (ko) * 2003-09-26 2006-09-14 칼 짜이스 에스엠테 아게 마이크로 리소그래피 투영 노출

Also Published As

Publication number Publication date
US8760744B2 (en) 2014-06-24
US9366857B2 (en) 2016-06-14
JP5329520B2 (ja) 2013-10-30
US10054786B2 (en) 2018-08-21
JP2010522977A (ja) 2010-07-08
US20160259161A1 (en) 2016-09-08
KR20100015913A (ko) 2010-02-12
DE102008016011A1 (de) 2008-10-02
US20100060988A1 (en) 2010-03-11
WO2008116886A1 (de) 2008-10-02
US8811568B2 (en) 2014-08-19
US20140078567A1 (en) 2014-03-20
US20150062682A1 (en) 2015-03-05

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