JP5327217B2 - 縮合芳香族環を含む反射防止膜組成物 - Google Patents

縮合芳香族環を含む反射防止膜組成物 Download PDF

Info

Publication number
JP5327217B2
JP5327217B2 JP2010508923A JP2010508923A JP5327217B2 JP 5327217 B2 JP5327217 B2 JP 5327217B2 JP 2010508923 A JP2010508923 A JP 2010508923A JP 2010508923 A JP2010508923 A JP 2010508923A JP 5327217 B2 JP5327217 B2 JP 5327217B2
Authority
JP
Japan
Prior art keywords
polymer
alkyl
composition
unit
antireflective coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010508923A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010528334A (ja
JP2010528334A5 (enExample
Inventor
フーリハン・フランシス
アブダラー・デイビッド
ラーマン・エム・ダリル
マッケンジー・ダグラス
チャン・ルーチー
ティムコ・アレン・ジー
キム・ウーキュ
ルー・ピン−フン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Performance Materials IP Japan GK
Original Assignee
AZ Electronic Materials IP Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/752,040 external-priority patent/US20080292987A1/en
Application filed by AZ Electronic Materials IP Japan Co Ltd filed Critical AZ Electronic Materials IP Japan Co Ltd
Publication of JP2010528334A publication Critical patent/JP2010528334A/ja
Publication of JP2010528334A5 publication Critical patent/JP2010528334A5/ja
Application granted granted Critical
Publication of JP5327217B2 publication Critical patent/JP5327217B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D165/00—Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • H10P76/2043—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
JP2010508923A 2007-05-22 2008-05-20 縮合芳香族環を含む反射防止膜組成物 Expired - Fee Related JP5327217B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/752,040 US20080292987A1 (en) 2007-05-22 2007-05-22 Antireflective Coating Composition Comprising Fused Aromatic Rings
US11/752,040 2007-05-22
US11/872,962 US8017296B2 (en) 2007-05-22 2007-10-16 Antireflective coating composition comprising fused aromatic rings
US11/872,962 2007-10-16
PCT/IB2008/001284 WO2008142546A2 (en) 2007-05-22 2008-05-20 An antireflective coating composition comprising fused aromatic rings

Publications (3)

Publication Number Publication Date
JP2010528334A JP2010528334A (ja) 2010-08-19
JP2010528334A5 JP2010528334A5 (enExample) 2011-05-26
JP5327217B2 true JP5327217B2 (ja) 2013-10-30

Family

ID=39938209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010508923A Expired - Fee Related JP5327217B2 (ja) 2007-05-22 2008-05-20 縮合芳香族環を含む反射防止膜組成物

Country Status (7)

Country Link
US (1) US8017296B2 (enExample)
EP (1) EP2158279B1 (enExample)
JP (1) JP5327217B2 (enExample)
KR (1) KR101532102B1 (enExample)
CN (1) CN101679800B (enExample)
TW (1) TWI424033B (enExample)
WO (1) WO2008142546A2 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100972900B1 (ko) * 2007-12-31 2010-07-28 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
TWI452419B (zh) * 2008-01-28 2014-09-11 Ａｚ電子材料Ｉｐ股份有限公司 細微圖案光罩及其製造方法、及使用其之細微圖案形成方法
US7989144B2 (en) * 2008-04-01 2011-08-02 Az Electronic Materials Usa Corp Antireflective coating composition
US20090253080A1 (en) * 2008-04-02 2009-10-08 Dammel Ralph R Photoresist Image-Forming Process Using Double Patterning
US20090253081A1 (en) * 2008-04-02 2009-10-08 David Abdallah Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step
US7932018B2 (en) * 2008-05-06 2011-04-26 Az Electronic Materials Usa Corp. Antireflective coating composition
US20100040838A1 (en) * 2008-08-15 2010-02-18 Abdallah David J Hardmask Process for Forming a Reverse Tone Image
US20100119979A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100119980A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100151392A1 (en) * 2008-12-11 2010-06-17 Rahman M Dalil Antireflective coating compositions
JP5085569B2 (ja) * 2009-01-06 2012-11-28 信越化学工業株式会社 レジスト下層膜形成方法およびこれを用いたパターン形成方法
US8084186B2 (en) * 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane
US20100316949A1 (en) * 2009-06-10 2010-12-16 Rahman M Dalil Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings
JP5609882B2 (ja) 2009-09-29 2014-10-22 Jsr株式会社 パターン形成方法及びレジスト下層膜形成用組成物
US8288271B2 (en) * 2009-11-02 2012-10-16 International Business Machines Corporation Method for reworking antireflective coating over semiconductor substrate
KR101414278B1 (ko) * 2009-11-13 2014-07-02 제일모직 주식회사 레지스트 하층막용 고분자, 이를 포함하는 레지스트 하층막 조성물 및 소자의 패턴 형성 방법
US8486609B2 (en) * 2009-12-23 2013-07-16 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
KR101311942B1 (ko) * 2009-12-31 2013-09-26 제일모직주식회사 레지스트 하층막용 방향족 고리 함유 화합물 및 이를 포함하는 레지스트 하층막용　조성물
JP5266294B2 (ja) * 2010-11-01 2013-08-21 信越化学工業株式会社 レジスト下層膜材料及びこれを用いたパターン形成方法
US8906590B2 (en) * 2011-03-30 2014-12-09 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
CN103635858B (zh) * 2011-07-07 2017-09-29 日产化学工业株式会社 包含含有脂环式骨架的咔唑树脂的形成抗蚀剂下层膜的组合物
KR101863634B1 (ko) * 2011-10-13 2018-06-04 주식회사 동진쎄미켐 자가 가교형 고분자, 이를 포함하는 레지스트 하층막 조성물 및 이를 이용한 패턴 형성 방법
US8906592B2 (en) 2012-08-01 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
KR101912677B1 (ko) 2012-08-10 2018-10-29 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성조성물
KR102004697B1 (ko) 2013-04-17 2019-07-29 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물
US9152051B2 (en) 2013-06-13 2015-10-06 Az Electronics Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
TWI541611B (zh) 2013-06-26 2016-07-11 第一毛織股份有限公司 用於硬罩幕組合物的單體、包括該單體的硬罩幕組合物及使用該硬罩幕組合物形成圖案的方法
CN105555888B (zh) * 2013-09-19 2019-04-02 日产化学工业株式会社 含有脂肪族多环结构的自组装膜的下层膜形成用组合物
KR102454445B1 (ko) 2014-11-04 2022-10-14 닛산 가가쿠 가부시키가이샤 아릴렌기를 갖는 폴리머를 포함하는 레지스트 하층막 형성 조성물
CN105037106B (zh) * 2015-05-20 2016-08-17 中节能万润股份有限公司 一种联芘酚及其制备方法和用途
JP2018127505A (ja) * 2015-06-17 2018-08-16 三菱瓦斯化学株式会社 アダマンタン構造含有重合体
KR102365131B1 (ko) * 2016-11-10 2022-02-17 삼성에스디아이 주식회사 유기막 조성물, 유기막, 및 패턴형성방법
KR101940655B1 (ko) * 2016-11-22 2019-01-21 동우 화인켐 주식회사 하드마스크용 조성물
US10381481B1 (en) 2018-04-27 2019-08-13 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-layer photoresist
WO2020184642A1 (ja) * 2019-03-13 2020-09-17 日産化学株式会社 レジスト下層膜形成組成物
TWI843893B (zh) 2019-10-09 2024-06-01 日商日產化學股份有限公司 阻劑下層膜形成組成物
WO2023088869A2 (en) 2021-11-17 2023-05-25 Merck Patent Gmbh Compositions and methods for improving metal structure fabrication by wet chemical etch

Family Cites Families (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474058A (en) * 1966-01-19 1969-10-21 Nat Distillers Chem Corp Compositions comprising ethylene-vinyl acetate copolymer,fatty acid salt and fatty acid amide
US3474054A (en) * 1966-09-13 1969-10-21 Permalac Corp The Surface coating compositions containing pyridine salts or aromatic sulfonic acids
US4200729A (en) * 1978-05-22 1980-04-29 King Industries, Inc Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts
US4251665A (en) * 1978-05-22 1981-02-17 King Industries, Inc. Aromatic sulfonic acid oxa-azacyclopentane adducts
US4463162A (en) * 1980-12-09 1984-07-31 Asahi-Dow Limited Polynuclear fused aromatic ring type polymer and preparation thereof
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPH0618861B2 (ja) 1986-03-31 1994-03-16 住金化工株式会社 熱硬化性樹脂組成物
US4719166A (en) * 1986-07-29 1988-01-12 Eastman Kodak Company Positive-working photoresist elements containing anti-reflective butadienyl dyes which are thermally stable at temperatures of at least 200° C.
JPS6351419A (ja) 1986-08-21 1988-03-04 Sugiro Otani 熱硬化性炭化水素樹脂の製造方法
EP0440374B1 (en) * 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
US5067824A (en) * 1990-06-29 1991-11-26 The Johnson Corporation Air controlled rotary joint compensator
US5187019A (en) * 1991-09-06 1993-02-16 King Industries, Inc. Latent catalysts
US5294680A (en) * 1992-07-24 1994-03-15 International Business Machines Corporation Polymeric dyes for antireflective coatings
US5607824A (en) * 1994-07-27 1997-03-04 International Business Machines Corporation Antireflective coating for microlithography
JPH0873570A (ja) 1994-09-12 1996-03-19 Dainippon Ink & Chem Inc フェノールアラルキル型樹脂の製造方法および硬化性エポキシ樹脂組成物
US5747599A (en) * 1994-12-12 1998-05-05 Kansai Paint Company, Limited Thermosetting coating composition
JP4031061B2 (ja) 1995-05-01 2008-01-09 新日鐵化学株式会社 新規エポキシ樹脂、中間体及び製造法、並びにこれを用いたエポキシ樹脂組成物及びその硬化物
KR100469551B1 (ko) * 1995-09-12 2005-05-27 다우 글로벌 테크놀로지스 인크. 에티닐치환된방향족화합물,이의합성방법,이의중합체및이의제조방법
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
EP0845486A1 (en) 1996-06-17 1998-06-03 Daicel Chemical Industries, Ltd. Epoxidized polyene, epoxy resin composition and product of curing thereof, and powder coating material
US5688598A (en) * 1996-06-28 1997-11-18 Morton International, Inc. Non-blistering thick film coating compositions and method for providing non-blistering thick film coatings on metal surfaces
US5965679A (en) * 1996-09-10 1999-10-12 The Dow Chemical Company Polyphenylene oligomers and polymers
US6228552B1 (en) * 1996-09-13 2001-05-08 Kabushiki Kaisha Toshiba Photo-sensitive material, method of forming a resist pattern and manufacturing an electronic parts using photo-sensitive material
EP0851300B1 (en) * 1996-12-24 2001-10-24 Fuji Photo Film Co., Ltd. Bottom anti-reflective coating material composition and method of forming resist pattern using the same
US6808859B1 (en) * 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
TW473475B (en) * 1997-03-04 2002-01-21 Kyowa Yuka Kk Diglycidyl ether, composition containing thereof, curing process of epoxy resin and cured product
JP4110589B2 (ja) 1997-03-31 2008-07-02 日立化成工業株式会社 回路用接続部材及び回路板の製造法
US5981145A (en) * 1997-04-30 1999-11-09 Clariant Finance (Bvi) Limited Light absorbing polymers
US6468718B1 (en) 1999-02-04 2002-10-22 Clariant Finance (Bvi) Limited Radiation absorbing polymer, composition for radiation absorbing coating, radiation absorbing coating and application thereof as anti-reflective coating
US5935760A (en) * 1997-10-20 1999-08-10 Brewer Science Inc. Thermosetting polyester anti-reflective coatings for multilayer photoresist processes
CA2243727A1 (en) 1998-01-30 1999-07-30 James J. Briguglio Positive-tone photoimageable crosslinkable coating
JPH11249311A (ja) 1998-03-03 1999-09-17 Jsr Corp 反射防止膜形成用組成物
US20010006759A1 (en) * 1998-09-08 2001-07-05 Charles R. Shipley Jr. Radiation sensitive compositions
JP3542931B2 (ja) * 1998-09-08 2004-07-14 雅夫 鬼澤 イソプレン・イソブチレンゴムの架橋方法およびその方法によって架橋して得られるゴム製品
US6849377B2 (en) * 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6316165B1 (en) * 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
US6323287B1 (en) * 1999-03-12 2001-11-27 Arch Specialty Chemicals, Inc. Hydroxy-amino thermally cured undercoat for 193 NM lithography
US6790587B1 (en) * 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
US6440642B1 (en) 1999-09-15 2002-08-27 Shipley Company, L.L.C. Dielectric composition
US6268072B1 (en) * 1999-10-01 2001-07-31 Eastman Kodak Company Electroluminescent devices having phenylanthracene-based polymers
KR20030009326A (ko) 1999-11-30 2003-01-29 브레우어 사이언스 인코포레이션 중합체 반사 방지 코팅에 사용하기 위한 비방향족 발색단
KR20030076228A (ko) * 2000-06-21 2003-09-26 아사히 가라스 가부시키가이샤 레지스트 조성물
JP3971088B2 (ja) 2000-06-30 2007-09-05 株式会社東芝 パターン形成方法
US6447980B1 (en) * 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
TW583503B (en) * 2000-12-01 2004-04-11 Kansai Paint Co Ltd Method of forming conductive pattern
EP1365290B1 (en) * 2001-02-09 2007-11-21 Asahi Glass Company Ltd. Resist composition
US6410208B1 (en) * 2001-04-18 2002-06-25 Gary Ganghui Teng Lithographic printing plates having a thermo-deactivatable photosensitive layer
TW576859B (en) * 2001-05-11 2004-02-21 Shipley Co Llc Antireflective coating compositions
JP2003082070A (ja) 2001-09-07 2003-03-19 Sumitomo Metal Ind Ltd 縮合多環芳香族樹脂とその製造方法
TW591341B (en) * 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
US6723488B2 (en) * 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
AU2002227106A1 (en) * 2001-11-15 2003-06-10 Honeywell International Inc. Spin-on anti-reflective coatings for photolithography
US6730454B2 (en) * 2002-04-16 2004-05-04 International Business Machines Corporation Antireflective SiO-containing compositions for hardmask layer
JP4013058B2 (ja) 2002-12-24 2007-11-28 信越化学工業株式会社 パターン形成方法及び下層膜形成材料
JP4069025B2 (ja) 2003-06-18 2008-03-26 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
GB2404284B (en) * 2003-07-10 2007-02-21 Dainippon Printing Co Ltd Organic electroluminescent element
JP4206851B2 (ja) 2003-07-23 2009-01-14 Ｊｓｒ株式会社 反射防止膜形成組成物及び反射防止膜の形成方法
JP4235698B2 (ja) * 2003-08-21 2009-03-11 旭化成ケミカルズ株式会社 感光性組成物およびその硬化物
US7303855B2 (en) * 2003-10-03 2007-12-04 Shin-Etsu Chemical Co., Ltd. Photoresist undercoat-forming material and patterning process
TWI274771B (en) * 2003-11-05 2007-03-01 Mitsui Chemicals Inc Resin composition, prepreg and laminate using the same
US20050186444A1 (en) * 2004-02-25 2005-08-25 Eastman Kodak Company Electroluminescent devices having conjugated arylamine polymers
US6899963B1 (en) 2004-02-25 2005-05-31 Eastman Kodak Company Electroluminescent devices having pendant naphthylanthracene-based polymers
US7427464B2 (en) * 2004-06-22 2008-09-23 Shin-Etsu Chemical Co., Ltd. Patterning process and undercoat-forming material
EP1691238A3 (en) * 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
US7816071B2 (en) * 2005-02-10 2010-10-19 Az Electronic Materials Usa Corp. Process of imaging a photoresist with multiple antireflective coatings
US7358025B2 (en) * 2005-03-11 2008-04-15 Shin-Etsu Chemical Co., Ltd. Photoresist undercoat-forming material and patterning process
EP1705519B1 (en) 2005-03-20 2016-07-06 Rohm and Haas Electronic Materials, L.L.C. Method of treating a microelectronic substrate
JP4575220B2 (ja) * 2005-04-14 2010-11-04 信越化学工業株式会社 レジスト下層膜材料およびパターン形成方法
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
JP4659678B2 (ja) * 2005-12-27 2011-03-30 信越化学工業株式会社 フォトレジスト下層膜形成材料及びパターン形成方法
EP1829942B1 (en) 2006-02-28 2012-09-26 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
TWI414893B (zh) 2006-03-14 2013-11-11 Jsr Corp 底層膜形成用組成物及圖型之形成方法
EP1845416A3 (en) 2006-04-11 2009-05-20 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for photolithography
JP5362176B2 (ja) * 2006-06-12 2013-12-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR100896451B1 (ko) 2006-12-30 2009-05-14 제일모직주식회사 카본 함량이 개선된 고 내에칭성 반사방지 하드마스크조성물, 이를 이용한 패턴화된 재료 형상의　제조방법
JP5118191B2 (ja) * 2007-04-02 2013-01-16 チェイル インダストリーズ インコーポレイテッド 反射防止性を有するハードマスク組成物及びこれを利用した材料のパターン形成方法
KR100908601B1 (ko) 2007-06-05 2009-07-21 제일모직주식회사 반사방지 하드마스크 조성물 및 이를 이용한 기판상 재료의패턴화 방법
JP4877101B2 (ja) 2007-07-02 2012-02-15 Ｊｓｒ株式会社 レジスト下層膜形成用組成物及びパターン形成方法
KR100930673B1 (ko) * 2007-12-24 2009-12-09 제일모직주식회사 반사방지 하드마스크 조성물　및　이를 이용한재료의　패턴화 방법
US7989144B2 (en) * 2008-04-01 2011-08-02 Az Electronic Materials Usa Corp Antireflective coating composition
US7932018B2 (en) * 2008-05-06 2011-04-26 Az Electronic Materials Usa Corp. Antireflective coating composition
US20100119979A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100119980A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100151392A1 (en) * 2008-12-11 2010-06-17 Rahman M Dalil Antireflective coating compositions
US20100316949A1 (en) * 2009-06-10 2010-12-16 Rahman M Dalil Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings
US8486609B2 (en) 2009-12-23 2013-07-16 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof

Also Published As

Publication number Publication date
US8017296B2 (en) 2011-09-13
KR101532102B1 (ko) 2015-06-26
EP2158279B1 (en) 2012-08-29
EP2158279A2 (en) 2010-03-03
US20080292995A1 (en) 2008-11-27
KR20100023868A (ko) 2010-03-04
CN101679800B (zh) 2013-06-26
JP2010528334A (ja) 2010-08-19
WO2008142546A2 (en) 2008-11-27
TW200916539A (en) 2009-04-16
CN101679800A (zh) 2010-03-24
WO2008142546A3 (en) 2009-02-05
TWI424033B (zh) 2014-01-21

Similar Documents

Publication Publication Date Title
JP5327217B2 (ja) 縮合芳香族環を含む反射防止膜組成物
US7932018B2 (en) Antireflective coating composition
US7989144B2 (en) Antireflective coating composition
CN106170737B (zh) 抗反射涂料组合物及其方法
TWI510862B (zh) 抗反射塗層組合物及其方法
KR101820195B1 (ko) 반사방지 코팅 조성물 및 이의 방법
US20100119980A1 (en) Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100316949A1 (en) Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings
JP2012508910A (ja) 縮合芳香環を含む反射防止コーティング組成物
US20080292987A1 (en) Antireflective Coating Composition Comprising Fused Aromatic Rings
US20120251943A1 (en) Antireflective coating composition and process thereof

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100604

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110411

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110411

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120810

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120925

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121214

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130625

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20130705

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130708

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20130705

R150 Certificate of patent or registration of utility model

Ref document number: 5327217

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees