TWI424033B - 包含稠合芳香環之抗反射塗料組合物 - Google Patents

包含稠合芳香環之抗反射塗料組合物 Download PDF

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Publication number
TWI424033B
TWI424033B TW097115585A TW97115585A TWI424033B TW I424033 B TWI424033 B TW I424033B TW 097115585 A TW097115585 A TW 097115585A TW 97115585 A TW97115585 A TW 97115585A TW I424033 B TWI424033 B TW I424033B
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Taiwan
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group
polymer
composition
unit
alkyl
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TW097115585A
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English (en)
Chinese (zh)
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TW200916539A (en
Inventor
胡立漢 法蘭西斯
雅達拉 大衛
達利 拉曼 M
麥坎基 道格拉斯
張汝志
提姆克 艾倫G
金羽圭
盧炳宏
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Az電子材料Ip股份有限公司
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Priority claimed from US11/752,040 external-priority patent/US20080292987A1/en
Application filed by Az電子材料Ip股份有限公司 filed Critical Az電子材料Ip股份有限公司
Publication of TW200916539A publication Critical patent/TW200916539A/zh
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Publication of TWI424033B publication Critical patent/TWI424033B/zh

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D165/00Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • H01L21/0276Photolithographic processes using an anti-reflective coating
    • H10P76/2043

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
TW097115585A 2007-05-22 2008-04-28 包含稠合芳香環之抗反射塗料組合物 TWI424033B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/752,040 US20080292987A1 (en) 2007-05-22 2007-05-22 Antireflective Coating Composition Comprising Fused Aromatic Rings
US11/872,962 US8017296B2 (en) 2007-05-22 2007-10-16 Antireflective coating composition comprising fused aromatic rings

Publications (2)

Publication Number Publication Date
TW200916539A TW200916539A (en) 2009-04-16
TWI424033B true TWI424033B (zh) 2014-01-21

Family

ID=39938209

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097115585A TWI424033B (zh) 2007-05-22 2008-04-28 包含稠合芳香環之抗反射塗料組合物

Country Status (7)

Country Link
US (1) US8017296B2 (enExample)
EP (1) EP2158279B1 (enExample)
JP (1) JP5327217B2 (enExample)
KR (1) KR101532102B1 (enExample)
CN (1) CN101679800B (enExample)
TW (1) TWI424033B (enExample)
WO (1) WO2008142546A2 (enExample)

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KR101863634B1 (ko) * 2011-10-13 2018-06-04 주식회사 동진쎄미켐 자가 가교형 고분자, 이를 포함하는 레지스트 하층막 조성물 및 이를 이용한 패턴 형성 방법
US8906592B2 (en) 2012-08-01 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
KR101912677B1 (ko) 2012-08-10 2018-10-29 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성조성물
KR102004697B1 (ko) 2013-04-17 2019-07-29 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물
US9152051B2 (en) 2013-06-13 2015-10-06 Az Electronics Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
TWI541611B (zh) 2013-06-26 2016-07-11 第一毛織股份有限公司 用於硬罩幕組合物的單體、包括該單體的硬罩幕組合物及使用該硬罩幕組合物形成圖案的方法
CN105555888B (zh) * 2013-09-19 2019-04-02 日产化学工业株式会社 含有脂肪族多环结构的自组装膜的下层膜形成用组合物
KR102454445B1 (ko) 2014-11-04 2022-10-14 닛산 가가쿠 가부시키가이샤 아릴렌기를 갖는 폴리머를 포함하는 레지스트 하층막 형성 조성물
CN105037106B (zh) * 2015-05-20 2016-08-17 中节能万润股份有限公司 一种联芘酚及其制备方法和用途
JP2018127505A (ja) * 2015-06-17 2018-08-16 三菱瓦斯化学株式会社 アダマンタン構造含有重合体
KR102365131B1 (ko) * 2016-11-10 2022-02-17 삼성에스디아이 주식회사 유기막 조성물, 유기막, 및 패턴형성방법
KR101940655B1 (ko) * 2016-11-22 2019-01-21 동우 화인켐 주식회사 하드마스크용 조성물
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EP2158279A2 (en) 2010-03-03
US20080292995A1 (en) 2008-11-27
KR20100023868A (ko) 2010-03-04
CN101679800B (zh) 2013-06-26
JP2010528334A (ja) 2010-08-19
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