JP5325096B2 - 銅ターゲット - Google Patents

銅ターゲット Download PDF

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Publication number
JP5325096B2
JP5325096B2 JP2009509986A JP2009509986A JP5325096B2 JP 5325096 B2 JP5325096 B2 JP 5325096B2 JP 2009509986 A JP2009509986 A JP 2009509986A JP 2009509986 A JP2009509986 A JP 2009509986A JP 5325096 B2 JP5325096 B2 JP 5325096B2
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JP
Japan
Prior art keywords
target
copper
stage
particle size
high purity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009509986A
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English (en)
Japanese (ja)
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JP2009535518A5 (enExample
JP2009535518A (ja
Inventor
イ，ウーウェン
ストロザース，スーザン・ディー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
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Honeywell International Inc
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Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2009535518A publication Critical patent/JP2009535518A/ja
Publication of JP2009535518A5 publication Critical patent/JP2009535518A5/ja
Application granted granted Critical
Publication of JP5325096B2 publication Critical patent/JP5325096B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2009509986A 2006-05-01 2007-04-30 銅ターゲット Expired - Fee Related JP5325096B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/415,621 US20070251818A1 (en) 2006-05-01 2006-05-01 Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
US11/415,621 2006-05-01
PCT/US2007/067734 WO2007130888A1 (en) 2006-05-01 2007-04-30 Copper target

Publications (3)

Publication Number Publication Date
JP2009535518A JP2009535518A (ja) 2009-10-01
JP2009535518A5 JP2009535518A5 (enExample) 2013-06-20
JP5325096B2 true JP5325096B2 (ja) 2013-10-23

Family

ID=38445688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009509986A Expired - Fee Related JP5325096B2 (ja) 2006-05-01 2007-04-30 銅ターゲット

Country Status (5)

Country Link
US (2) US20070251818A1 (enExample)
JP (1) JP5325096B2 (enExample)
KR (1) KR20080113124A (enExample)
TW (1) TW200801209A (enExample)
WO (1) WO2007130888A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8791018B2 (en) * 2006-12-19 2014-07-29 Spansion Llc Method of depositing copper using physical vapor deposition
JP5464352B2 (ja) * 2010-03-05 2014-04-09 三菱マテリアル株式会社 均一かつ微細結晶組織を有する高純度銅加工材の製造方法
CN104053814B (zh) 2012-01-12 2016-08-24 吉坤日矿日石金属株式会社 高纯度铜溅射靶
CN102862439A (zh) * 2012-08-31 2013-01-09 金星铜集团有限公司 一种喷丸法制造仿铸铜效果艺术品的方法
US9761420B2 (en) * 2013-12-13 2017-09-12 Praxair S.T. Technology, Inc. Diffusion bonded high purity copper sputtering target assemblies
WO2015151901A1 (ja) * 2014-03-31 2015-10-08 Jx日鉱日石金属株式会社 銅又は銅合金スパッタリングターゲット
CN104946923B (zh) * 2015-06-30 2017-02-01 浙江工业大学 一种铜基复合材料及其制备方法
US11035036B2 (en) * 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure
CN114892135B (zh) * 2022-05-24 2023-09-08 宁波江丰电子材料股份有限公司 一种高纯铜靶材及其制备方法与应用

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Also Published As

Publication number Publication date
US20070251818A1 (en) 2007-11-01
KR20080113124A (ko) 2008-12-26
WO2007130888A1 (en) 2007-11-15
US20090101496A1 (en) 2009-04-23
TW200801209A (en) 2008-01-01
JP2009535518A (ja) 2009-10-01

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