KR20080113124A - 구리 타겟 - Google Patents

구리 타겟 Download PDF

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Publication number
KR20080113124A
KR20080113124A KR1020087028796A KR20087028796A KR20080113124A KR 20080113124 A KR20080113124 A KR 20080113124A KR 1020087028796 A KR1020087028796 A KR 1020087028796A KR 20087028796 A KR20087028796 A KR 20087028796A KR 20080113124 A KR20080113124 A KR 20080113124A
Authority
KR
South Korea
Prior art keywords
target
copper
grain size
copper material
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020087028796A
Other languages
English (en)
Korean (ko)
Inventor
우웬 이
수잔 디. 스트로더스
Original Assignee
허니웰 인터내셔널 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 허니웰 인터내셔널 인코포레이티드 filed Critical 허니웰 인터내셔널 인코포레이티드
Publication of KR20080113124A publication Critical patent/KR20080113124A/ko
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020087028796A 2006-05-01 2007-04-30 구리 타겟 Withdrawn KR20080113124A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/415,621 US20070251818A1 (en) 2006-05-01 2006-05-01 Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
US11/415,621 2006-05-01

Publications (1)

Publication Number Publication Date
KR20080113124A true KR20080113124A (ko) 2008-12-26

Family

ID=38445688

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087028796A Withdrawn KR20080113124A (ko) 2006-05-01 2007-04-30 구리 타겟

Country Status (5)

Country Link
US (2) US20070251818A1 (enExample)
JP (1) JP5325096B2 (enExample)
KR (1) KR20080113124A (enExample)
TW (1) TW200801209A (enExample)
WO (1) WO2007130888A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8791018B2 (en) * 2006-12-19 2014-07-29 Spansion Llc Method of depositing copper using physical vapor deposition
JP5464352B2 (ja) * 2010-03-05 2014-04-09 三菱マテリアル株式会社 均一かつ微細結晶組織を有する高純度銅加工材の製造方法
CN104053814B (zh) 2012-01-12 2016-08-24 吉坤日矿日石金属株式会社 高纯度铜溅射靶
CN102862439A (zh) * 2012-08-31 2013-01-09 金星铜集团有限公司 一种喷丸法制造仿铸铜效果艺术品的方法
US9761420B2 (en) * 2013-12-13 2017-09-12 Praxair S.T. Technology, Inc. Diffusion bonded high purity copper sputtering target assemblies
WO2015151901A1 (ja) * 2014-03-31 2015-10-08 Jx日鉱日石金属株式会社 銅又は銅合金スパッタリングターゲット
CN104946923B (zh) * 2015-06-30 2017-02-01 浙江工业大学 一种铜基复合材料及其制备方法
US11035036B2 (en) * 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure
CN114892135B (zh) * 2022-05-24 2023-09-08 宁波江丰电子材料股份有限公司 一种高纯铜靶材及其制备方法与应用

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Also Published As

Publication number Publication date
JP5325096B2 (ja) 2013-10-23
US20070251818A1 (en) 2007-11-01
WO2007130888A1 (en) 2007-11-15
US20090101496A1 (en) 2009-04-23
TW200801209A (en) 2008-01-01
JP2009535518A (ja) 2009-10-01

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20081125

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid