JP5322668B2 - 半導体装置の製造方法およびフォトマスク - Google Patents

半導体装置の製造方法およびフォトマスク Download PDF

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Publication number
JP5322668B2
JP5322668B2 JP2009010653A JP2009010653A JP5322668B2 JP 5322668 B2 JP5322668 B2 JP 5322668B2 JP 2009010653 A JP2009010653 A JP 2009010653A JP 2009010653 A JP2009010653 A JP 2009010653A JP 5322668 B2 JP5322668 B2 JP 5322668B2
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Japan
Prior art keywords
pattern
region
mask
film
mask material
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Expired - Fee Related
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JP2009010653A
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English (en)
Japanese (ja)
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JP2010171106A (ja
JP2010171106A5 (enExample
Inventor
聡 稲葉
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Toshiba Corp
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Toshiba Corp
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Publication date
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Priority to JP2009010653A priority Critical patent/JP5322668B2/ja
Priority to US12/556,152 priority patent/US8329592B2/en
Publication of JP2010171106A publication Critical patent/JP2010171106A/ja
Publication of JP2010171106A5 publication Critical patent/JP2010171106A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009010653A 2009-01-21 2009-01-21 半導体装置の製造方法およびフォトマスク Expired - Fee Related JP5322668B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009010653A JP5322668B2 (ja) 2009-01-21 2009-01-21 半導体装置の製造方法およびフォトマスク
US12/556,152 US8329592B2 (en) 2009-01-21 2009-09-09 Method of fabricating semiconductor device, and photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009010653A JP5322668B2 (ja) 2009-01-21 2009-01-21 半導体装置の製造方法およびフォトマスク

Publications (3)

Publication Number Publication Date
JP2010171106A JP2010171106A (ja) 2010-08-05
JP2010171106A5 JP2010171106A5 (enExample) 2011-07-07
JP5322668B2 true JP5322668B2 (ja) 2013-10-23

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Family Applications (1)

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JP2009010653A Expired - Fee Related JP5322668B2 (ja) 2009-01-21 2009-01-21 半導体装置の製造方法およびフォトマスク

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Country Link
US (1) US8329592B2 (enExample)
JP (1) JP5322668B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324619B2 (en) 2014-08-25 2016-04-26 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4461154B2 (ja) 2007-05-15 2010-05-12 株式会社東芝 半導体装置
US7862962B2 (en) * 2009-01-20 2011-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit layout design
US8258572B2 (en) * 2009-12-07 2012-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM structure with FinFETs having multiple fins
US8813014B2 (en) * 2009-12-30 2014-08-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for making the same using semiconductor fin density design rules
US9274410B2 (en) * 2010-02-05 2016-03-01 Cypress Semiconductor Corporation Method and system for automated generation of masks for spacer formation from a desired final wafer pattern
US9362290B2 (en) * 2010-02-08 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell layout
KR101867503B1 (ko) * 2010-11-19 2018-06-15 에스케이하이닉스 주식회사 반도체 소자의 미세 패턴 형성 방법
JP2012178378A (ja) * 2011-02-25 2012-09-13 Tokyo Electron Ltd 半導体装置の製造方法
JP5713837B2 (ja) 2011-08-10 2015-05-07 株式会社東芝 半導体装置の製造方法
KR101871748B1 (ko) 2011-12-06 2018-06-28 삼성전자주식회사 반도체 소자의 패턴 형성 방법
JP6136721B2 (ja) * 2013-08-01 2017-05-31 大日本印刷株式会社 パターン形成方法及びインプリントモールドの製造方法
CN105097526B (zh) * 2014-05-04 2018-10-23 中芯国际集成电路制造(上海)有限公司 FinFET器件的制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07193198A (ja) * 1993-12-27 1995-07-28 Mitsubishi Electric Corp 不揮発性半導体メモリおよびその製造方法
JP2005116969A (ja) * 2003-10-10 2005-04-28 Toshiba Corp 半導体装置及びその製造方法
US7611944B2 (en) * 2005-03-28 2009-11-03 Micron Technology, Inc. Integrated circuit fabrication
JP4768469B2 (ja) * 2006-02-21 2011-09-07 株式会社東芝 半導体装置の製造方法
US7592223B2 (en) * 2007-04-02 2009-09-22 Sandisk Corporation Methods of fabricating non-volatile memory with integrated select and peripheral circuitry and post-isolation memory cell formation
JP4384199B2 (ja) * 2007-04-04 2009-12-16 株式会社東芝 半導体装置の製造方法
JP4461154B2 (ja) * 2007-05-15 2010-05-12 株式会社東芝 半導体装置
JP4445521B2 (ja) * 2007-06-15 2010-04-07 株式会社東芝 半導体装置
KR101468028B1 (ko) * 2008-06-17 2014-12-02 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324619B2 (en) 2014-08-25 2016-04-26 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US9564368B2 (en) 2014-08-25 2017-02-07 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same

Also Published As

Publication number Publication date
US20100183958A1 (en) 2010-07-22
JP2010171106A (ja) 2010-08-05
US8329592B2 (en) 2012-12-11

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