JP5300470B2 - 半導体パッケージ及び同パッケージを形成する方法 - Google Patents

半導体パッケージ及び同パッケージを形成する方法 Download PDF

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Publication number
JP5300470B2
JP5300470B2 JP2008513466A JP2008513466A JP5300470B2 JP 5300470 B2 JP5300470 B2 JP 5300470B2 JP 2008513466 A JP2008513466 A JP 2008513466A JP 2008513466 A JP2008513466 A JP 2008513466A JP 5300470 B2 JP5300470 B2 JP 5300470B2
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layer
substrate
gold
gold layer
semiconductor
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Expired - Fee Related
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Japanese (ja)
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JP2008543049A5 (enExample
JP2008543049A (ja
Inventor
ロメガ トンプソン、バシル
フェンダー、ジェイソン
ケイ． デイリー、テリー
チャン、ジン−ウク
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
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    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01L2924/01082—Lead [Pb]
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    • H01L2924/013—Alloys
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15763—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550 C

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating Methods And Accessories (AREA)
JP2008513466A 2005-05-26 2006-03-24 半導体パッケージ及び同パッケージを形成する方法 Expired - Fee Related JP5300470B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/140,351 US7339267B2 (en) 2005-05-26 2005-05-26 Semiconductor package and method for forming the same
US11/140,351 2005-05-26
PCT/US2006/010745 WO2006127107A2 (en) 2005-05-26 2006-03-24 Semiconductor package and method for forming the same

Publications (3)

Publication Number Publication Date
JP2008543049A JP2008543049A (ja) 2008-11-27
JP2008543049A5 JP2008543049A5 (enExample) 2009-05-07
JP5300470B2 true JP5300470B2 (ja) 2013-09-25

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JP2008513466A Expired - Fee Related JP5300470B2 (ja) 2005-05-26 2006-03-24 半導体パッケージ及び同パッケージを形成する方法

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Country Link
US (1) US7339267B2 (enExample)
JP (1) JP5300470B2 (enExample)
CN (1) CN100539008C (enExample)
TW (1) TWI433279B (enExample)
WO (1) WO2006127107A2 (enExample)

Families Citing this family (11)

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US7949601B2 (en) * 2007-04-21 2011-05-24 Hartford Fire Insurance Company Method and system for providing minimum contract values in an annuity with lifetime benefit payments
DE102009044086A1 (de) * 2009-09-23 2011-03-24 United Monolithic Semiconductors Gmbh Verfahren zur Herstellung eines elektronischen Bauteils und nach diesem Verfahren hergestelltes elektronisches Bauteil
US8680674B2 (en) 2012-05-31 2014-03-25 Freescale Semiconductor, Inc. Methods and structures for reducing heat exposure of thermally sensitive semiconductor devices
US9093429B2 (en) 2012-06-27 2015-07-28 Freescale Semiconductor, Inc. Methods and structures for reducing heat exposure of thermally sensitive semiconductor devices
US9875987B2 (en) 2014-10-07 2018-01-23 Nxp Usa, Inc. Electronic devices with semiconductor die attached with sintered metallic layers, and methods of formation of such devices
US9589860B2 (en) * 2014-10-07 2017-03-07 Nxp Usa, Inc. Electronic devices with semiconductor die coupled to a thermally conductive substrate
US9698116B2 (en) 2014-10-31 2017-07-04 Nxp Usa, Inc. Thick-silver layer interface for a semiconductor die and corresponding thermal layer
CN107579032B (zh) * 2017-07-27 2019-04-09 厦门市三安集成电路有限公司 一种化合物半导体器件的背面制程方法
JP7168280B2 (ja) * 2018-06-26 2022-11-09 住友電工デバイス・イノベーション株式会社 半導体装置、および、半導体チップの搭載方法
CN110767604B (zh) * 2019-10-31 2022-03-18 厦门市三安集成电路有限公司 化合物半导体器件和化合物半导体器件的背面铜制程方法
US20230253359A1 (en) * 2022-02-04 2023-08-10 Wolfspeed, Inc. Semiconductor die including a metal stack

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US3881884A (en) * 1973-10-12 1975-05-06 Ibm Method for the formation of corrosion resistant electronic interconnections
JPH01123418A (ja) * 1987-11-09 1989-05-16 Nec Corp 半導体装置の製造方法
US5027189A (en) * 1990-01-10 1991-06-25 Hughes Aircraft Company Integrated circuit solder die-attach design and method
US5156998A (en) * 1991-09-30 1992-10-20 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes
JP3374880B2 (ja) * 1994-10-26 2003-02-10 三菱電機株式会社 半導体装置の製造方法、及び半導体装置
US6140703A (en) * 1996-08-05 2000-10-31 Motorola, Inc. Semiconductor metallization structure
JP3724110B2 (ja) * 1997-04-24 2005-12-07 三菱電機株式会社 半導体装置の製造方法
US6040239A (en) * 1997-08-22 2000-03-21 Micron Technology, Inc. Non-oxidizing touch contact interconnect for semiconductor test systems and method of fabrication
JP4438133B2 (ja) * 1999-08-19 2010-03-24 シャープ株式会社 ヘテロ接合型バイポーラトランジスタおよびその製造方法
US6312830B1 (en) * 1999-09-02 2001-11-06 Intel Corporation Method and an apparatus for forming an under bump metallization structure
US6960824B1 (en) * 2000-11-15 2005-11-01 Skyworks Solutions, Inc. Structure and method for fabrication of a leadless chip carrier
JP2003045875A (ja) * 2001-07-30 2003-02-14 Nec Kagobutsu Device Kk 半導体装置およびその製造方法
EP1318544A1 (en) * 2001-12-06 2003-06-11 STMicroelectronics S.r.l. Method for manufacturing semiconductor device packages
US6607941B2 (en) * 2002-01-11 2003-08-19 National Semiconductor Corporation Process and structure improvements to shellcase style packaging technology
KR100611778B1 (ko) * 2002-09-24 2006-08-10 주식회사 하이닉스반도체 반도체장치 제조방법

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WO2006127107A3 (en) 2007-06-14
TW200644192A (en) 2006-12-16
CN100539008C (zh) 2009-09-09
TWI433279B (zh) 2014-04-01
JP2008543049A (ja) 2008-11-27
US20060270194A1 (en) 2006-11-30
WO2006127107A2 (en) 2006-11-30
US7339267B2 (en) 2008-03-04
CN101185153A (zh) 2008-05-21

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