JP5298691B2 - 炭化ケイ素半導体装置およびその製造方法 - Google Patents

炭化ケイ素半導体装置およびその製造方法 Download PDF

Info

Publication number
JP5298691B2
JP5298691B2 JP2008198351A JP2008198351A JP5298691B2 JP 5298691 B2 JP5298691 B2 JP 5298691B2 JP 2008198351 A JP2008198351 A JP 2008198351A JP 2008198351 A JP2008198351 A JP 2008198351A JP 5298691 B2 JP5298691 B2 JP 5298691B2
Authority
JP
Japan
Prior art keywords
silicon carbide
groove
side wall
semiconductor device
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008198351A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010040564A5 (enrdf_load_stackoverflow
JP2010040564A (ja
Inventor
美紗子 穂永
真 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2008198351A priority Critical patent/JP5298691B2/ja
Publication of JP2010040564A publication Critical patent/JP2010040564A/ja
Publication of JP2010040564A5 publication Critical patent/JP2010040564A5/ja
Priority to US13/858,904 priority patent/US20130224941A1/en
Application granted granted Critical
Publication of JP5298691B2 publication Critical patent/JP5298691B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008198351A 2008-07-31 2008-07-31 炭化ケイ素半導体装置およびその製造方法 Active JP5298691B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008198351A JP5298691B2 (ja) 2008-07-31 2008-07-31 炭化ケイ素半導体装置およびその製造方法
US13/858,904 US20130224941A1 (en) 2008-07-31 2013-04-08 Silicon carbide semiconductor device and method of manufacturing thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008198351A JP5298691B2 (ja) 2008-07-31 2008-07-31 炭化ケイ素半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2010040564A JP2010040564A (ja) 2010-02-18
JP2010040564A5 JP2010040564A5 (enrdf_load_stackoverflow) 2010-04-02
JP5298691B2 true JP5298691B2 (ja) 2013-09-25

Family

ID=42012838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008198351A Active JP5298691B2 (ja) 2008-07-31 2008-07-31 炭化ケイ素半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP5298691B2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2011092808A1 (ja) * 2010-01-27 2013-05-30 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5564781B2 (ja) * 2008-07-07 2014-08-06 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
EP2528098B1 (en) 2010-01-19 2019-01-02 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device and method of manufacturing same
JP5707770B2 (ja) * 2010-08-03 2015-04-30 住友電気工業株式会社 半導体装置およびその製造方法
JP5741583B2 (ja) 2010-08-03 2015-07-01 住友電気工業株式会社 半導体装置およびその製造方法
US9117740B2 (en) 2010-08-27 2015-08-25 National University Corporation NARA Institute of Science and Technology SiC semiconductor element
JP2012209422A (ja) * 2011-03-30 2012-10-25 Sumitomo Electric Ind Ltd Ｉｇｂｔ
JP5637916B2 (ja) * 2011-03-31 2014-12-10 トヨタ自動車株式会社 半導体装置及びその製造方法
JP5668576B2 (ja) 2011-04-01 2015-02-12 住友電気工業株式会社 炭化珪素半導体装置
JP2012253293A (ja) * 2011-06-07 2012-12-20 Sumitomo Electric Ind Ltd 半導体装置
JP5699878B2 (ja) 2011-09-14 2015-04-15 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2013069964A (ja) 2011-09-26 2013-04-18 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP6017127B2 (ja) * 2011-09-30 2016-10-26 株式会社東芝 炭化珪素半導体装置
JP5764046B2 (ja) 2011-11-21 2015-08-12 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6064366B2 (ja) 2012-05-18 2017-01-25 住友電気工業株式会社 半導体装置
JP5920010B2 (ja) * 2012-05-18 2016-05-18 住友電気工業株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4450123B2 (ja) * 1999-11-17 2010-04-14 株式会社デンソー 炭化珪素半導体装置
JP4843854B2 (ja) * 2001-03-05 2011-12-21 住友電気工業株式会社 Ｍｏｓデバイス
JP2003095797A (ja) * 2001-09-26 2003-04-03 Toshiba Corp 単結晶材料の製造方法及び電子装置の製造方法
JP2005136386A (ja) * 2003-10-09 2005-05-26 Matsushita Electric Ind Co Ltd 炭化珪素−酸化物積層体，その製造方法及び半導体装置
JP5017768B2 (ja) * 2004-05-31 2012-09-05 富士電機株式会社 炭化珪素半導体素子
JP4549167B2 (ja) * 2004-11-25 2010-09-22 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP5167593B2 (ja) * 2006-03-23 2013-03-21 富士電機株式会社 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2011092808A1 (ja) * 2010-01-27 2013-05-30 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法

Also Published As

Publication number Publication date
JP2010040564A (ja) 2010-02-18

Similar Documents

Publication Publication Date Title
JP5298691B2 (ja) 炭化ケイ素半導体装置およびその製造方法
JPWO2011092808A1 (ja) 炭化ケイ素半導体装置およびその製造方法
US8421151B2 (en) Semiconductor device and process for production thereof
JP5433352B2 (ja) 半導体装置の製造方法
JP5261907B2 (ja) トレンチゲート型炭化珪素半導体装置
JP5082853B2 (ja) Ｍｏｓｆｅｔ
US8872188B2 (en) Silicon carbide semiconductor device and method of manufacturing thereof
JP2006066439A (ja) 半導体装置およびその製造方法
JP2008311261A (ja) 半導体装置およびその製造方法
JP4842527B2 (ja) 半導体装置の製造方法
CN102760768B (zh) 碳化硅半导体器件
JP2019004010A (ja) 半導体装置およびその製造方法
WO2013077078A1 (ja) 半導体装置およびその製造方法
JP5564781B2 (ja) 炭化ケイ素半導体装置およびその製造方法
US20130221375A1 (en) Silicon carbide semiconductor device and method for manufacturing same
US20190319102A1 (en) Semiconductor device
JP2016004955A (ja) 炭化珪素半導体装置及びその製造方法
TW201126712A (en) Silicon carbide semiconductor device and manufacturing method thereof

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100209

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110330

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130305

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130307

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130426

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130521

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130603

R150 Certificate of patent or registration of utility model

Ref document number: 5298691

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250