JP5280332B2 - 電流制御用半導体素子およびそれを用いた制御装置 - Google Patents

電流制御用半導体素子およびそれを用いた制御装置 Download PDF

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Publication number
JP5280332B2
JP5280332B2 JP2009250701A JP2009250701A JP5280332B2 JP 5280332 B2 JP5280332 B2 JP 5280332B2 JP 2009250701 A JP2009250701 A JP 2009250701A JP 2009250701 A JP2009250701 A JP 2009250701A JP 5280332 B2 JP5280332 B2 JP 5280332B2
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Prior art keywords
current
semiconductor element
value
pwm
period
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JP2009250701A
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Japanese (ja)
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JP2011097434A (ja
JP2011097434A5 (enExample
Inventor
鉄平 広津
信康 金川
至 田辺
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Hitachi Astemo Ltd
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Hitachi Automotive Systems Ltd
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Application filed by Hitachi Automotive Systems Ltd filed Critical Hitachi Automotive Systems Ltd
Priority to JP2009250701A priority Critical patent/JP5280332B2/ja
Priority to EP10008804.6A priority patent/EP2320547B1/en
Priority to US12/868,236 priority patent/US8421441B2/en
Publication of JP2011097434A publication Critical patent/JP2011097434A/ja
Publication of JP2011097434A5 publication Critical patent/JP2011097434A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electronic Switches (AREA)
  • Control Of Voltage And Current In General (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Control Of Electrical Variables (AREA)
JP2009250701A 2009-10-30 2009-10-30 電流制御用半導体素子およびそれを用いた制御装置 Active JP5280332B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009250701A JP5280332B2 (ja) 2009-10-30 2009-10-30 電流制御用半導体素子およびそれを用いた制御装置
EP10008804.6A EP2320547B1 (en) 2009-10-30 2010-08-24 Current-controlled semiconductor device and control unit using the same
US12/868,236 US8421441B2 (en) 2009-10-30 2010-08-25 Current-controlled semiconductor device and control unit using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009250701A JP5280332B2 (ja) 2009-10-30 2009-10-30 電流制御用半導体素子およびそれを用いた制御装置

Publications (3)

Publication Number Publication Date
JP2011097434A JP2011097434A (ja) 2011-05-12
JP2011097434A5 JP2011097434A5 (enExample) 2013-03-07
JP5280332B2 true JP5280332B2 (ja) 2013-09-04

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JP2009250701A Active JP5280332B2 (ja) 2009-10-30 2009-10-30 電流制御用半導体素子およびそれを用いた制御装置

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US (1) US8421441B2 (enExample)
EP (1) EP2320547B1 (enExample)
JP (1) JP5280332B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5406145B2 (ja) * 2010-08-31 2014-02-05 日立オートモティブシステムズ株式会社 電流制御用半導体素子、およびそれを用いた制御装置
JP5395127B2 (ja) * 2011-07-14 2014-01-22 日立オートモティブシステムズ株式会社 電流制御用半導体素子およびそれを用いた制御装置
JP5706502B2 (ja) * 2013-10-24 2015-04-22 日立オートモティブシステムズ株式会社 電子制御装置
CN103558894A (zh) * 2013-11-18 2014-02-05 铜陵科达车辆装备有限责任公司 一种电流信号转换器电路
JP6337789B2 (ja) * 2015-02-04 2018-06-06 株式会社オートネットワーク技術研究所 電流検出回路、電流検出装置及び切替え装置
JP6614787B2 (ja) 2015-04-09 2019-12-04 ルネサスエレクトロニクス株式会社 半導体装置
JP6485375B2 (ja) * 2016-01-22 2019-03-20 株式会社デンソー 電流補正回路
JP6667300B2 (ja) * 2016-01-22 2020-03-18 ルネサスエレクトロニクス株式会社 電流検出回路及びそれを備えた半導体装置
JP2019115100A (ja) 2017-12-21 2019-07-11 ルネサスエレクトロニクス株式会社 電源電圧安定化方法、半導体装置および電源システム
JP6978952B2 (ja) 2018-01-25 2021-12-08 ルネサスエレクトロニクス株式会社 半導体装置、負荷駆動システムおよびインダクタ電流の検出方法
JP7004585B2 (ja) 2018-01-29 2022-01-21 ルネサスエレクトロニクス株式会社 半導体装置、負荷駆動システムおよびインダクタ電流の電流検出方法
KR102570609B1 (ko) * 2020-09-08 2023-08-25 성균관대학교산학협력단 오프셋 전압이 자동 조절되는 전류센서 및 이의 오프셋 자동 조절 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2570523B2 (ja) * 1991-08-23 1997-01-08 日本モトローラ株式会社 電流検出回路
US5543632A (en) * 1991-10-24 1996-08-06 International Business Machines Corporation Temperature monitoring pilot transistor
US5675268A (en) * 1995-10-03 1997-10-07 Motorola, Inc. Overcurrent detection circuit for a power MOSFET and method therefor
US5784245A (en) * 1996-11-27 1998-07-21 Motorola Inc. Solenoid driver and method for determining solenoid operational status
JP2000235424A (ja) * 1999-02-12 2000-08-29 Yazaki Corp カレントミラー回路、電流センサ及びこれを具備したスイッチング回路並びにスイッチングデバイス
JP2003031415A (ja) * 2001-07-19 2003-01-31 Denso Corp 誘導性負荷制御装置，誘導性負荷制御装置の出荷検査方法，及びａ／ｄ変換器選別方法
JP4127641B2 (ja) 2001-10-23 2008-07-30 三菱電機株式会社 半導体装置
JP4144591B2 (ja) 2004-12-03 2008-09-03 株式会社デンソー 半導体装置
US7466601B2 (en) * 2006-12-01 2008-12-16 Qimonda Ag Output driver
US7911808B2 (en) * 2007-02-10 2011-03-22 Active-Semi, Inc. Primary side constant output current controller with highly improved accuracy
US7960997B2 (en) * 2007-08-08 2011-06-14 Advanced Analogic Technologies, Inc. Cascode current sensor for discrete power semiconductor devices
JP2011069809A (ja) * 2009-08-31 2011-04-07 Hitachi Automotive Systems Ltd 制御システム及びそれに用いる半導体素子
US8700324B2 (en) * 2010-08-25 2014-04-15 Caterpillar Inc. Machine navigation system having integrity checking

Also Published As

Publication number Publication date
EP2320547A2 (en) 2011-05-11
JP2011097434A (ja) 2011-05-12
EP2320547A3 (en) 2013-08-28
US20110101959A1 (en) 2011-05-05
US8421441B2 (en) 2013-04-16
EP2320547B1 (en) 2016-10-12

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