JP5247438B2 - ナノ構造物の製造方法 - Google Patents

ナノ構造物の製造方法 Download PDF

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JP5247438B2
JP5247438B2 JP2008514165A JP2008514165A JP5247438B2 JP 5247438 B2 JP5247438 B2 JP 5247438B2 JP 2008514165 A JP2008514165 A JP 2008514165A JP 2008514165 A JP2008514165 A JP 2008514165A JP 5247438 B2 JP5247438 B2 JP 5247438B2
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layer
catalyst
cathode
nanostructure
nanostructures
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JP2008546146A (ja
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トーマス・ゴラール・デ・モンサベール
ジャン・ディジョン
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コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • D—TEXTILES; PAPER
    • D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
    • D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
    • D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
    • D01F9/12—Carbon filaments; Apparatus specially adapted for the manufacture thereof
    • D01F9/127—Carbon filaments; Apparatus specially adapted for the manufacture thereof by thermal decomposition of hydrocarbon gases or vapours or other carbon-containing compounds in the form of gas or vapour, e.g. carbon monoxide, alcohols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3048—Distributed particle emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Textile Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008514165A 2005-05-30 2006-05-29 ナノ構造物の製造方法 Active JP5247438B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0551412A FR2886284B1 (fr) 2005-05-30 2005-05-30 Procede de realisation de nanostructures
FR0551412 2005-05-30
PCT/FR2006/050489 WO2007003826A2 (fr) 2005-05-30 2006-05-29 Procede de realisation de nanostructures

Publications (2)

Publication Number Publication Date
JP2008546146A JP2008546146A (ja) 2008-12-18
JP5247438B2 true JP5247438B2 (ja) 2013-07-24

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008514166A Pending JP2008543008A (ja) 2005-05-30 2006-05-29 放出陰極の製造方法
JP2008514165A Active JP5247438B2 (ja) 2005-05-30 2006-05-29 ナノ構造物の製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2008514166A Pending JP2008543008A (ja) 2005-05-30 2006-05-29 放出陰極の製造方法

Country Status (5)

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US (2) US7785164B2 (enExample)
EP (2) EP1885649A2 (enExample)
JP (2) JP2008543008A (enExample)
FR (1) FR2886284B1 (enExample)
WO (2) WO2007003826A2 (enExample)

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FR2873852B1 (fr) 2004-07-28 2011-06-24 Commissariat Energie Atomique Structure de cathode a haute resolution
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CA2671663A1 (en) 2006-12-19 2008-06-26 Basf Coatings Ag Coating compositions with high scratch resistance and weathering stability
DE102007061855A1 (de) 2007-12-19 2009-06-25 Basf Coatings Ag Beschichtungsmittel mit hoher Kratzbeständigkeit und Witterungsstabilität
DE102007061856A1 (de) 2007-12-19 2009-06-25 Basf Coatings Ag Beschichtungsmittel mit hoher Kratzbeständigkeit und Witterungsstabilität
DE102007061854A1 (de) 2007-12-19 2009-06-25 Basf Coatings Ag Beschichtungsmittel mit hoher Kratzbeständigkeit und Witterungsstabilität
JP5187689B2 (ja) * 2008-08-08 2013-04-24 学校法人 関西大学 ナノワイヤ構造体、ナノワイヤ結合体、およびその製造方法
JP5572944B2 (ja) * 2008-12-18 2014-08-20 富士通株式会社 配線構造体の製造方法及び配線構造体
DE102009024103A1 (de) 2009-06-06 2010-12-09 Basf Coatings Gmbh Beschichtungsmittel und daraus hergestellte Beschichtungen mit hoher Kratzfestigkeit und hoher Kocherstabilität
CN102064063B (zh) * 2010-12-24 2012-08-29 清华大学 场发射阴极装置及其制备方法
EP2541581A1 (en) * 2011-06-29 2013-01-02 Khalid Waqas Device comprising nanostructures and method of manufacturing thereof
WO2013037951A1 (en) * 2011-09-16 2013-03-21 Danmarks Tekniske Universitet Catalyst deposition for the preparation of carbon nanotubes
CN105984862B (zh) * 2015-02-16 2018-08-28 北京大学深圳研究生院 用于生长碳纳米管的方法
JP7556246B2 (ja) 2020-09-23 2024-09-26 セイコーエプソン株式会社 発光装置、発光装置の製造方法およびプロジェクター
CN114426255B (zh) * 2020-10-28 2025-03-04 中国科学技术大学 一种微纳米结构定点缺陷掺杂的方法及nv色心传感器

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KR100697656B1 (ko) * 2005-04-28 2007-03-22 이승호 다중 전자 공급원을 구비한 평면 발광 소자
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Also Published As

Publication number Publication date
WO2007003826A2 (fr) 2007-01-11
EP1885648B1 (fr) 2018-08-29
US20080197766A1 (en) 2008-08-21
JP2008543008A (ja) 2008-11-27
US7785164B2 (en) 2010-08-31
JP2008546146A (ja) 2008-12-18
EP1885648A2 (fr) 2008-02-13
WO2007003826A3 (fr) 2007-04-12
US7993703B2 (en) 2011-08-09
WO2007026086A3 (fr) 2007-05-31
FR2886284A1 (fr) 2006-12-01
EP1885649A2 (fr) 2008-02-13
US20080194168A1 (en) 2008-08-14
WO2007026086A2 (fr) 2007-03-08
FR2886284B1 (fr) 2007-06-29

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