JP5227799B2 - ゲート酸化物の漏れを抑えたリプレースメントゲートトランジスタ - Google Patents
ゲート酸化物の漏れを抑えたリプレースメントゲートトランジスタ Download PDFInfo
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- JP5227799B2 JP5227799B2 JP2008540082A JP2008540082A JP5227799B2 JP 5227799 B2 JP5227799 B2 JP 5227799B2 JP 2008540082 A JP2008540082 A JP 2008540082A JP 2008540082 A JP2008540082 A JP 2008540082A JP 5227799 B2 JP5227799 B2 JP 5227799B2
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- 239000010410 layer Substances 0.000 claims description 96
- 229910052751 metal Inorganic materials 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 64
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 239000011241 protective layer Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 150000001247 metal acetylides Chemical class 0.000 claims description 3
- 238000000034 method Methods 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 238000010586 diagram Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- -1 structures Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- Composite Materials (AREA)
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- Materials Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Description
超小型化により、ウェルに濃度勾配をつけたドーピング、エピタキシャルウエーハ、ハロー(イオン)注入、チップ注入(tip implants)、軽濃度にドープされたドレイン構造、ソース/ドレイン領域に対する多重イオン注入、ゲートおよびソース/ドレインのシリサイド化、複数のサイドウォールスペーサなどを含むようにすることでトランジスタ設計の複雑度が劇的に増している。
しかしながら、約15Åの厚みのゲート酸化物の形成しようとする場合、このような目的は、リーク電流が原因となって実現困難なものとなっている。
従って、図面および詳細な説明は本質的に説明のためのものであり、本発明を限定しようとするものではないものとして扱われるべきである。なお、図1〜図12において、同様の特徴には同じ参照符号が記されている。
本発明は、リーク電流を増加させずにEOTが薄くされたゲート酸化物、例えば厚みが5Å〜12Å、例えば10Åのなど、15Å未満の厚みを有するゲート酸化物を備えたメタルゲートトランジスタを、ゲート酸化物層とゲート電極層間に濃度勾配のつけられた組成を有する保護層をゲート酸化物層上に形成するステップを含む技術により提供することによって、このような問題に取り組み、解決する。この濃度勾配のつけられた保護層を形成することで、ゲート電極とゲート酸化物層間の応力が減り、これにより欠陥が減り、リーク電流が低減する。
Claims (4)
- 基板(10)と、
前記基板(10)上のゲート誘電層(12)と、
前記ゲート誘電層(12)上の保護層(70)と、
前記保護層(70)上のメタルゲート電極(60)と、を含む半導体デバイスであって、
前記保護層(70)は、前記ゲート誘電層(12)と前記メタルゲート電極(60)との間に濃度勾配のつけられた組成を有するものであり、
前記ゲート誘電層(12)は酸化物を含み、
前記保護層(70)は非晶質炭素層を含み、この非晶質炭素層(70)は、メタルゲート電極(60)から前記非晶質炭素層(70)を通じて前記ゲート酸化物(12)に向かうに従ってその濃度が低下している金属炭化物を含み、さらに、
前記金属炭化物は、タンタル、ニッケル、コバルトおよびモリブデンからなる群から選択された金属を含み、さらに、前記メタルゲート電極(60)との界面における約80原子百分率から、前記非晶質層(70)を通じて、前記ゲート酸化物層(12)との界面における約20原子百分率にまでその濃度が低下する、半導体デバイス。 - 前記非晶質炭素層(70)は、酸素、シリコンおよび窒素からなる群から選択される少なくとも1つの素子を含む、請求項1記載の半導体デバイス。
- 前記保護層(70)の厚みは、約10Å〜約50Åである、請求項1記載の半導体デバイス。
- 前記保護層(70)は、
化学気相蒸着または原子層蒸着により非晶質炭素層を蒸着するステップと、
前記メタルゲート電極から前記非晶質炭素層(70)へと金属が拡散するように加熱するステップであって、前記メタルゲート電極(60)から、前記非晶質炭素層を通じて、最大濃度が50原子百分率で、酸化物を含む前記ゲート電極層(12)に向かうに従って濃度が低下している金属炭化物を形成するように前記加熱がなされるステップと、により形成される、請求項1記載の半導体デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US11/269,745 | 2005-11-09 | ||
US11/269,745 US8053849B2 (en) | 2005-11-09 | 2005-11-09 | Replacement metal gate transistors with reduced gate oxide leakage |
PCT/US2006/042870 WO2007056093A2 (en) | 2005-11-09 | 2006-11-02 | Replacement metal gate transistors with reduced gate oxide leakage |
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JP2013013696A Division JP6076755B2 (ja) | 2005-11-09 | 2013-01-28 | ゲート酸化物の漏れを抑えたリプレースメントゲートトランジスタ |
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JP2009515363A JP2009515363A (ja) | 2009-04-09 |
JP5227799B2 true JP5227799B2 (ja) | 2013-07-03 |
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JP2013013696A Expired - Fee Related JP6076755B2 (ja) | 2005-11-09 | 2013-01-28 | ゲート酸化物の漏れを抑えたリプレースメントゲートトランジスタ |
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Country | Link |
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US (3) | US8053849B2 (ja) |
EP (2) | EP2149908B1 (ja) |
JP (2) | JP5227799B2 (ja) |
KR (3) | KR101375800B1 (ja) |
CN (2) | CN101819928B (ja) |
DE (1) | DE602006014713D1 (ja) |
TW (2) | TWI447908B (ja) |
WO (1) | WO2007056093A2 (ja) |
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CN102110710A (zh) * | 2009-12-23 | 2011-06-29 | 中国科学院微电子研究所 | 形成有沟道应力层的半导体结构及其形成方法 |
CN102456558B (zh) * | 2010-10-25 | 2013-10-23 | 中芯国际集成电路制造(上海)有限公司 | 一种高介电常数介质-金属栅极的制造方法 |
US20120190216A1 (en) * | 2011-01-20 | 2012-07-26 | International Business Machines Corporation | Annealing techniques for high performance complementary metal oxide semiconductor (cmos) device fabrication |
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CN101300680A (zh) | 2008-11-05 |
TWI447908B (zh) | 2014-08-01 |
CN101819928A (zh) | 2010-09-01 |
CN101819928B (zh) | 2012-12-05 |
TW201351655A (zh) | 2013-12-16 |
JP2009515363A (ja) | 2009-04-09 |
KR101375800B1 (ko) | 2014-03-19 |
WO2007056093A3 (en) | 2007-10-11 |
TW200802862A (en) | 2008-01-01 |
EP1946379B1 (en) | 2010-06-02 |
US8053849B2 (en) | 2011-11-08 |
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US20070102776A1 (en) | 2007-05-10 |
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US20120049196A1 (en) | 2012-03-01 |
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