JP5227197B2 - フォーカスリング及びプラズマ処理装置 - Google Patents

フォーカスリング及びプラズマ処理装置 Download PDF

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Publication number
JP5227197B2
JP5227197B2 JP2009000606A JP2009000606A JP5227197B2 JP 5227197 B2 JP5227197 B2 JP 5227197B2 JP 2009000606 A JP2009000606 A JP 2009000606A JP 2009000606 A JP2009000606 A JP 2009000606A JP 5227197 B2 JP5227197 B2 JP 5227197B2
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Prior art keywords
dielectric
focus ring
plasma
dielectric constant
resistant
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Japanese (ja)
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JP2010028073A (ja
Inventor
雅人 南
芳彦 佐々木
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2009000606A priority Critical patent/JP5227197B2/ja
Priority to KR1020090053285A priority patent/KR101171422B1/ko
Priority to TW098120466A priority patent/TWI501311B/zh
Priority to CN2009101463118A priority patent/CN101609779B/zh
Publication of JP2010028073A publication Critical patent/JP2010028073A/ja
Priority to KR1020110042968A priority patent/KR20110056465A/ko
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Publication of JP5227197B2 publication Critical patent/JP5227197B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2009000606A 2008-06-19 2009-01-06 フォーカスリング及びプラズマ処理装置 Active JP5227197B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009000606A JP5227197B2 (ja) 2008-06-19 2009-01-06 フォーカスリング及びプラズマ処理装置
KR1020090053285A KR101171422B1 (ko) 2008-06-19 2009-06-16 포커스 링 및 플라즈마 처리 장치
TW098120466A TWI501311B (zh) 2008-06-19 2009-06-18 Focusing ring and plasma processing device
CN2009101463118A CN101609779B (zh) 2008-06-19 2009-06-19 聚焦环以及等离子体处理装置
KR1020110042968A KR20110056465A (ko) 2008-06-19 2011-05-06 포커스 링

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008160636 2008-06-19
JP2008160636 2008-06-19
JP2009000606A JP5227197B2 (ja) 2008-06-19 2009-01-06 フォーカスリング及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2010028073A JP2010028073A (ja) 2010-02-04
JP5227197B2 true JP5227197B2 (ja) 2013-07-03

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ID=41483470

Family Applications (1)

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JP2009000606A Active JP5227197B2 (ja) 2008-06-19 2009-01-06 フォーカスリング及びプラズマ処理装置

Country Status (4)

Country Link
JP (1) JP5227197B2 (zh)
KR (1) KR20110056465A (zh)
CN (1) CN101609779B (zh)
TW (1) TWI501311B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11450545B2 (en) 2019-04-17 2022-09-20 Samsung Electronics Co., Ltd. Capacitively-coupled plasma substrate processing apparatus including a focus ring and a substrate processing method using the same
US11515193B2 (en) 2019-10-15 2022-11-29 Samsung Electronics Co., Ltd. Etching apparatus

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5885939B2 (ja) * 2010-07-20 2016-03-16 東京エレクトロン株式会社 シールド部材及びシールド部材を備えた基板載置台
JP5955062B2 (ja) * 2011-04-25 2016-07-20 東京エレクトロン株式会社 プラズマ処理装置
JP5665726B2 (ja) * 2011-12-14 2015-02-04 株式会社東芝 エッチング装置およびフォーカスリング
JP6400273B2 (ja) * 2013-03-11 2018-10-03 新光電気工業株式会社 静電チャック装置
CN103811247B (zh) * 2014-02-17 2016-04-13 清华大学 用于等离子体刻蚀的聚焦环及具有其的等离子体刻蚀装置
JP5615454B1 (ja) * 2014-02-25 2014-10-29 コバレントマテリアル株式会社 フォーカスリング
JP5941971B2 (ja) * 2014-12-10 2016-06-29 東京エレクトロン株式会社 リング状シールド部材及びリング状シールド部材を備えた基板載置台
JP6380094B2 (ja) * 2014-12-26 2018-08-29 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6578215B2 (ja) * 2015-04-03 2019-09-18 株式会社ジャパンディスプレイ プラズマ処理装置、シールドリング、及び、シールドリング用部材
CN105551925A (zh) * 2015-12-08 2016-05-04 武汉华星光电技术有限公司 干刻蚀装置
US10755900B2 (en) * 2017-05-10 2020-08-25 Applied Materials, Inc. Multi-layer plasma erosion protection for chamber components
JP6969182B2 (ja) * 2017-07-06 2021-11-24 東京エレクトロン株式会社 プラズマ処理装置
KR102022459B1 (ko) * 2017-11-02 2019-09-18 인베니아 주식회사 쉴드 구조체 및 이를 포함하는 플라즈마 처리 장치
KR102022458B1 (ko) * 2017-11-02 2019-09-18 인베니아 주식회사 쉴드 구조체 및 이를 포함하는 플라즈마 처리 장치
JP6932070B2 (ja) * 2017-11-29 2021-09-08 東京エレクトロン株式会社 フォーカスリング及び半導体製造装置
JP7145625B2 (ja) * 2018-03-07 2022-10-03 東京エレクトロン株式会社 基板載置構造体およびプラズマ処理装置
KR102684969B1 (ko) * 2019-04-12 2024-07-16 삼성전자주식회사 에지 링을 갖는 기판 처리 장치
KR102325223B1 (ko) * 2019-07-22 2021-11-10 세메스 주식회사 기판 처리 장치
KR102077975B1 (ko) * 2019-10-15 2020-02-14 주식회사 기가레인 플라즈마 처리 수직도가 향상된 플라즈마 처리 장치
CN112992631B (zh) * 2019-12-16 2023-09-29 中微半导体设备(上海)股份有限公司 一种下电极组件，其安装方法及等离子体处理装置
CN111501025B (zh) * 2020-04-23 2022-05-27 北京北方华创微电子装备有限公司 沉积设备
JP2023005174A (ja) * 2021-06-28 2023-01-18 東京エレクトロン株式会社 消耗部材、プラズマ処理装置及び消耗部材の製造方法
JP7562800B1 (ja) 2023-10-16 2024-10-07 株式会社フェローテックマテリアルテクノロジーズ エッチャーリング、およびエッチャーリングの製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139628A (ja) * 1983-01-31 1984-08-10 Hitachi Ltd ドライエツチング装置
JPH08339895A (ja) * 1995-06-12 1996-12-24 Tokyo Electron Ltd プラズマ処理装置
JP4367959B2 (ja) * 1999-12-22 2009-11-18 東京エレクトロン株式会社 プラズマ処理装置
US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
CN1518073A (zh) * 2003-01-07 2004-08-04 东京毅力科创株式会社 等离子体处理装置及聚焦环
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP2008078208A (ja) * 2006-09-19 2008-04-03 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11450545B2 (en) 2019-04-17 2022-09-20 Samsung Electronics Co., Ltd. Capacitively-coupled plasma substrate processing apparatus including a focus ring and a substrate processing method using the same
US11515193B2 (en) 2019-10-15 2022-11-29 Samsung Electronics Co., Ltd. Etching apparatus

Also Published As

Publication number Publication date
TWI501311B (zh) 2015-09-21
KR20110056465A (ko) 2011-05-30
TW201011829A (en) 2010-03-16
CN101609779A (zh) 2009-12-23
JP2010028073A (ja) 2010-02-04
CN101609779B (zh) 2012-07-04

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