JP5220714B2 - 樹脂封止型半導体装置及びその製造方法 - Google Patents

樹脂封止型半導体装置及びその製造方法 Download PDF

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JP5220714B2
JP5220714B2 JP2009217642A JP2009217642A JP5220714B2 JP 5220714 B2 JP5220714 B2 JP 5220714B2 JP 2009217642 A JP2009217642 A JP 2009217642A JP 2009217642 A JP2009217642 A JP 2009217642A JP 5220714 B2 JP5220714 B2 JP 5220714B2
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Prior art keywords
die pad
inner lead
resin
semiconductor device
lead
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Japanese (ja)
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JP2011066327A (ja
JP2011066327A5 (enExample
Inventor
正行 佐藤
好士 前村
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Seiko Instruments Inc
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Seiko Instruments Inc
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Priority to JP2009217642A priority Critical patent/JP5220714B2/ja
Priority to TW099129107A priority patent/TWI492348B/zh
Priority to US12/882,896 priority patent/US8253238B2/en
Priority to KR1020100091789A priority patent/KR101665721B1/ko
Priority to CN201010287954.7A priority patent/CN102024773B/zh
Publication of JP2011066327A publication Critical patent/JP2011066327A/ja
Publication of JP2011066327A5 publication Critical patent/JP2011066327A5/ja
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    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
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JP2009217642A 2009-09-18 2009-09-18 樹脂封止型半導体装置及びその製造方法 Active JP5220714B2 (ja)

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Application Number Priority Date Filing Date Title
JP2009217642A JP5220714B2 (ja) 2009-09-18 2009-09-18 樹脂封止型半導体装置及びその製造方法
TW099129107A TWI492348B (zh) 2009-09-18 2010-08-30 樹脂密封半導體裝置及製造此裝置之方法
US12/882,896 US8253238B2 (en) 2009-09-18 2010-09-15 Resin-sealed semiconductor device and method of manufacturing the same
KR1020100091789A KR101665721B1 (ko) 2009-09-18 2010-09-17 수지 밀봉형 반도체 장치 및 그 제조 방법
CN201010287954.7A CN102024773B (zh) 2009-09-18 2010-09-17 树脂密封型半导体装置及其制造方法

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JP2011066327A JP2011066327A (ja) 2011-03-31
JP2011066327A5 JP2011066327A5 (enExample) 2012-08-30
JP5220714B2 true JP5220714B2 (ja) 2013-06-26

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US20110068442A1 (en) 2011-03-24
TWI492348B (zh) 2015-07-11
KR20110031133A (ko) 2011-03-24
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CN102024773A (zh) 2011-04-20
US8253238B2 (en) 2012-08-28

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