JP5210717B2 - キャパシタの製造方法 - Google Patents
キャパシタの製造方法 Download PDFInfo
- Publication number
- JP5210717B2 JP5210717B2 JP2008155932A JP2008155932A JP5210717B2 JP 5210717 B2 JP5210717 B2 JP 5210717B2 JP 2008155932 A JP2008155932 A JP 2008155932A JP 2008155932 A JP2008155932 A JP 2008155932A JP 5210717 B2 JP5210717 B2 JP 5210717B2
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- dielectric layer
- layer
- electrode
- capacitor
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- 239000003990 capacitor Substances 0.000 title claims description 100
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 238000000034 method Methods 0.000 claims description 38
- 238000007747 plating Methods 0.000 claims description 17
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 11
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 11
- 238000010030 laminating Methods 0.000 claims description 11
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 11
- 229910003465 moissanite Inorganic materials 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 7
- 238000007743 anodising Methods 0.000 claims 1
- 239000007769 metal material Substances 0.000 description 16
- 229910052802 copper Inorganic materials 0.000 description 13
- 229910052759 nickel Inorganic materials 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 239000010407 anodic oxide Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
(1)第1の電極層を形成する工程と、
(2)第1の電極層の表面上に導電性材料を積層して第1の凸部を形成する工程と、
(3)第1の凸部の表面及び第1の電極層の表面に絶縁膜を成膜して第1の誘電体層を形成する工程と、
(4)第1の誘電体層を介して第1の凸部及び前記第1の電極層に重なるように導電性材料を積層して第2の電極層を形成する工程。
(5)第2の電極層の表面上に導電性材料を積層して第2の凸部を形成する工程と、
(6)第2の凸部の表面及び第2の電極層の表面に絶縁材料を成膜して第2の誘電体層を形成する工程と、
(7)第2の誘電体層を介して第2の凸部及び第2の電極層に重なるように導電性材料を積層して第3の電極層を形成する工程。
(キャパシタの構造)
(キャパシタの製造方法)
次に、図15を参照してキャパシタユニットについて説明する。キャパシタユニット51は、第1実施形態に係るキャパシタ1Aを用いてキャパシタンスブリッジを形成する。なお、キャパシタユニット51は、第2実施形態に係るキャパシタ1B、第3実施形態に係るキャパシタ1C及び第4実施形態に係るキャパシタ1Dを用いてキャパシタンスブリッジを形成するようにしてもよい。
Claims (4)
- 第1の電極層を形成する工程と、
前記第1の電極層の表面上に導電性材料をめっき法により積層して第1の凸部を形成する工程と、
前記第1の凸部の表面及び前記第1の電極層の表面に絶縁膜を成膜して第1の誘電体層を形成する工程と、
前記第1の誘電体層を介して前記第1の凸部及び前記第1の電極層に重なるように導電性材料をめっき法により積層して第2の電極層を形成する工程と、を備え、
前記第2の電極層の表面上に導電性材料を積層してめっき法により第2の凸部を形成する工程と、
前記第2の凸部の表面及び前記第2の電極層の表面に絶縁膜を成膜して第2の誘電体層を形成する工程と、
前記第2の誘電体層を介して前記第2の凸部及び前記第2の電極層に重なるように導電性材料をめっき法により積層して第3の電極層を形成する工程と、を更に備える、キャパシタの製造方法。 - 前記第1の誘電体層を形成する工程及び前記第2の誘電体層を形成する工程の少なくとも一方の工程において、CVD法またはアトミックレイヤー法によって前記絶縁膜を成膜する、請求項1記載のキャパシタの製造方法。
- 前記絶縁膜は、Al2O3、SiO2、チタンオキサイド、SiC、タンタルオキサイド、ハフニウムオキサイド及びBaTiO3の少なくとも一つからなる、請求項1記載のキャパシタの製造方法。
- 前記第1の誘電体層を形成する工程及び前記第2の誘電体層を形成する工程の少なくとも一方の工程において、前記第1の凸部の表面及び前記第1の電極層の表面にTa膜を成膜し、前記Ta膜の表面を陽極酸化する、請求項1記載のキャパシタの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/819,253 | 2007-06-26 | ||
US11/819,253 US8085522B2 (en) | 2007-06-26 | 2007-06-26 | Capacitor and method of manufacturing the same and capacitor unit |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013003588A Division JP2013065902A (ja) | 2007-06-26 | 2013-01-11 | キャパシタおよびその製造方法並びにキャパシタユニット |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009010371A JP2009010371A (ja) | 2009-01-15 |
JP5210717B2 true JP5210717B2 (ja) | 2013-06-12 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008155932A Expired - Fee Related JP5210717B2 (ja) | 2007-06-26 | 2008-06-13 | キャパシタの製造方法 |
JP2013003588A Pending JP2013065902A (ja) | 2007-06-26 | 2013-01-11 | キャパシタおよびその製造方法並びにキャパシタユニット |
Family Applications After (1)
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JP2013003588A Pending JP2013065902A (ja) | 2007-06-26 | 2013-01-11 | キャパシタおよびその製造方法並びにキャパシタユニット |
Country Status (2)
Country | Link |
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US (1) | US8085522B2 (ja) |
JP (2) | JP5210717B2 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US8432662B2 (en) * | 2009-01-30 | 2013-04-30 | Headway Technologies, Inc. | Ceramic capacitor and method of manufacturing same |
US8462482B2 (en) * | 2009-01-30 | 2013-06-11 | Headway Technologies, Inc. | Ceramic capacitor and method of manufacturing same |
US8171607B2 (en) * | 2009-01-30 | 2012-05-08 | Headway Technologies, Inc. | Method of manufacturing ceramic capacitor |
TWI467610B (zh) * | 2009-07-23 | 2015-01-01 | Ind Tech Res Inst | 電容結構 |
US8599533B2 (en) * | 2010-09-07 | 2013-12-03 | International Business Machines Corporation | Nanostructure electrode for pseudocapacitive energy storage |
US8502340B2 (en) | 2010-12-09 | 2013-08-06 | Tessera, Inc. | High density three-dimensional integrated capacitors |
US8742541B2 (en) | 2010-12-09 | 2014-06-03 | Tessera, Inc. | High density three-dimensional integrated capacitors |
JP6097540B2 (ja) * | 2012-01-17 | 2017-03-15 | ローム株式会社 | チップコンデンサおよびその製造方法 |
CN105431830B (zh) | 2013-06-12 | 2018-09-18 | 耐克创新有限合伙公司 | 能够缓解由于部件故障导致的数据丢失的可穿戴装置组件 |
US10102977B2 (en) * | 2014-06-10 | 2018-10-16 | Smart Hybrid Systems Incorporated | High energy density capacitor with micrometer structures and nanometer components |
KR101933419B1 (ko) * | 2017-04-25 | 2018-12-28 | 삼성전기 주식회사 | 커패시터 및 그 제조 방법 |
US10283274B2 (en) | 2017-07-17 | 2019-05-07 | Headway Technologies, Inc. | Capacitor including dielectric structure formed of sintered body, and manufacturing method thereof |
JPWO2021079566A1 (ja) | 2019-10-24 | 2021-04-29 | ||
US11823992B2 (en) * | 2021-09-24 | 2023-11-21 | Nanya Technology Corporation | Semiconductor device with uneven electrode surface and method for fabricating the same |
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2007
- 2007-06-26 US US11/819,253 patent/US8085522B2/en not_active Expired - Fee Related
-
2008
- 2008-06-13 JP JP2008155932A patent/JP5210717B2/ja not_active Expired - Fee Related
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2013
- 2013-01-11 JP JP2013003588A patent/JP2013065902A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US8085522B2 (en) | 2011-12-27 |
JP2013065902A (ja) | 2013-04-11 |
US20090000093A1 (en) | 2009-01-01 |
JP2009010371A (ja) | 2009-01-15 |
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