JP5195174B2 - 成膜装置及び成膜方法 - Google Patents
成膜装置及び成膜方法 Download PDFInfo
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- JP5195174B2 JP5195174B2 JP2008222728A JP2008222728A JP5195174B2 JP 5195174 B2 JP5195174 B2 JP 5195174B2 JP 2008222728 A JP2008222728 A JP 2008222728A JP 2008222728 A JP2008222728 A JP 2008222728A JP 5195174 B2 JP5195174 B2 JP 5195174B2
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- 238000000034 method Methods 0.000 title claims description 40
- 239000007789 gas Substances 0.000 claims description 316
- 238000000926 separation method Methods 0.000 claims description 171
- 238000012545 processing Methods 0.000 claims description 127
- 239000012495 reaction gas Substances 0.000 claims description 92
- 239000010408 film Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 36
- 230000002093 peripheral effect Effects 0.000 claims description 35
- 238000011144 upstream manufacturing Methods 0.000 claims description 21
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- 239000007795 chemical reaction product Substances 0.000 claims description 14
- 238000007599 discharging Methods 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
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- 238000001784 detoxification Methods 0.000 claims description 4
- 239000002699 waste material Substances 0.000 claims description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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- 238000001514 detection method Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
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- 238000000151 deposition Methods 0.000 description 2
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- 239000011261 inert gas Substances 0.000 description 2
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- 239000010936 titanium Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- SEQDDYPDSLOBDC-UHFFFAOYSA-N Temazepam Chemical compound N=1C(O)C(=O)N(C)C2=CC=C(Cl)C=C2C=1C1=CC=CC=C1 SEQDDYPDSLOBDC-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
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- 239000002052 molecular layer Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
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Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008222728A JP5195174B2 (ja) | 2008-08-29 | 2008-08-29 | 成膜装置及び成膜方法 |
US12/547,545 US9416448B2 (en) | 2008-08-29 | 2009-08-26 | Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium for film deposition method |
KR1020090080137A KR101575359B1 (ko) | 2008-08-29 | 2009-08-28 | 성막 장치, 기판 처리 장치, 성막 방법 및 상기 성막 방법용 기억 매체 |
TW98128930A TWI437654B (zh) | 2008-08-29 | 2009-08-28 | 成膜裝置、基板處理裝置及成膜方法 |
CN 200910169415 CN101660140B (zh) | 2008-08-29 | 2009-08-31 | 成膜装置及成膜方法、基板处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008222728A JP5195174B2 (ja) | 2008-08-29 | 2008-08-29 | 成膜装置及び成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010056470A JP2010056470A (ja) | 2010-03-11 |
JP5195174B2 true JP5195174B2 (ja) | 2013-05-08 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008222728A Active JP5195174B2 (ja) | 2008-08-29 | 2008-08-29 | 成膜装置及び成膜方法 |
Country Status (2)
Country | Link |
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JP (1) | JP5195174B2 (zh) |
CN (1) | CN101660140B (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5195175B2 (ja) * | 2008-08-29 | 2013-05-08 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP5195676B2 (ja) * | 2008-08-29 | 2013-05-08 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及び記憶媒体 |
JP5572515B2 (ja) * | 2010-10-15 | 2014-08-13 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
JP5599350B2 (ja) | 2011-03-29 | 2014-10-01 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP5630393B2 (ja) * | 2011-07-21 | 2014-11-26 | 東京エレクトロン株式会社 | 成膜装置及び基板処理装置 |
WO2013106949A1 (zh) * | 2012-01-18 | 2013-07-25 | 清华大学 | 用于内部稀薄气流模拟验证及压力检测的变结构真空腔室 |
WO2014057836A1 (ja) | 2012-10-11 | 2014-04-17 | 東京エレクトロン株式会社 | 成膜装置 |
JP6134191B2 (ja) | 2013-04-07 | 2017-05-24 | 村川 惠美 | 回転型セミバッチald装置 |
JP6294194B2 (ja) | 2014-09-02 | 2018-03-14 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
TWI696724B (zh) * | 2014-09-10 | 2020-06-21 | 美商應用材料股份有限公司 | 空間原子層沈積中的氣體分離控制 |
JP6552206B2 (ja) * | 2015-02-02 | 2019-07-31 | 東京エレクトロン株式会社 | 排気管無害化方法及び成膜装置 |
JP6398761B2 (ja) | 2015-02-04 | 2018-10-03 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6388552B2 (ja) | 2015-03-03 | 2018-09-12 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP6388553B2 (ja) | 2015-03-03 | 2018-09-12 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP6735549B2 (ja) | 2015-11-04 | 2020-08-05 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及びリング状部材 |
KR102567720B1 (ko) * | 2016-01-26 | 2023-08-17 | 주성엔지니어링(주) | 기판 처리 장치 |
JP7008629B2 (ja) * | 2016-01-26 | 2022-01-25 | ジュスン エンジニアリング カンパニー リミテッド | 基板処理装置 |
JP6680190B2 (ja) * | 2016-11-14 | 2020-04-15 | 東京エレクトロン株式会社 | 成膜装置 |
CN110137121B (zh) * | 2018-02-09 | 2024-03-26 | 东京毅力科创株式会社 | 基板处理装置 |
JP7048885B2 (ja) * | 2018-03-15 | 2022-04-06 | シンフォニアテクノロジー株式会社 | Efem |
JP7330060B2 (ja) * | 2019-10-18 | 2023-08-21 | 東京エレクトロン株式会社 | 成膜装置、制御装置及び圧力計の調整方法 |
JP7296854B2 (ja) * | 2019-11-07 | 2023-06-23 | 東京エレクトロン株式会社 | ガス供給方法及び基板処理装置 |
JP2024027409A (ja) | 2022-08-17 | 2024-03-01 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5225366A (en) * | 1990-06-22 | 1993-07-06 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for and a method of growing thin films of elemental semiconductors |
JP3144664B2 (ja) * | 1992-08-29 | 2001-03-12 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
JP3376809B2 (ja) * | 1996-03-27 | 2003-02-10 | 松下電器産業株式会社 | 有機金属気相成長装置 |
EP0987700B1 (en) * | 1997-05-08 | 2004-08-25 | Matsushita Electric Industrial Co., Ltd. | Device and method for manufacturing an optical recording medium |
US20020195056A1 (en) * | 2000-05-12 | 2002-12-26 | Gurtej Sandhu | Versatile atomic layer deposition apparatus |
KR100558922B1 (ko) * | 2004-12-16 | 2006-03-10 | (주)퓨전에이드 | 박막 증착장치 및 방법 |
KR100631972B1 (ko) * | 2005-02-28 | 2006-10-11 | 삼성전기주식회사 | 화학기상증착 공정을 이용한 초격자 반도체 구조를 제조하는 방법 |
US20070218702A1 (en) * | 2006-03-15 | 2007-09-20 | Asm Japan K.K. | Semiconductor-processing apparatus with rotating susceptor |
JP2008172083A (ja) * | 2007-01-12 | 2008-07-24 | Sharp Corp | 気相成長装置および気相成長方法 |
US8043432B2 (en) * | 2007-02-12 | 2011-10-25 | Tokyo Electron Limited | Atomic layer deposition systems and methods |
US20100199914A1 (en) * | 2007-10-10 | 2010-08-12 | Michael Iza | Chemical vapor deposition reactor chamber |
JP5195176B2 (ja) * | 2008-08-29 | 2013-05-08 | 東京エレクトロン株式会社 | 成膜装置 |
JP5262452B2 (ja) * | 2008-08-29 | 2013-08-14 | 東京エレクトロン株式会社 | 成膜装置及び基板処理装置 |
-
2008
- 2008-08-29 JP JP2008222728A patent/JP5195174B2/ja active Active
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2009
- 2009-08-31 CN CN 200910169415 patent/CN101660140B/zh active Active
Also Published As
Publication number | Publication date |
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JP2010056470A (ja) | 2010-03-11 |
CN101660140B (zh) | 2013-09-25 |
CN101660140A (zh) | 2010-03-03 |
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