JP5190205B2 - 半導体素子の製造方法 - Google Patents

半導体素子の製造方法 Download PDF

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Publication number
JP5190205B2
JP5190205B2 JP2007027870A JP2007027870A JP5190205B2 JP 5190205 B2 JP5190205 B2 JP 5190205B2 JP 2007027870 A JP2007027870 A JP 2007027870A JP 2007027870 A JP2007027870 A JP 2007027870A JP 5190205 B2 JP5190205 B2 JP 5190205B2
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Japan
Prior art keywords
contact
film
contact hole
contact holes
axis direction
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Expired - Fee Related
Application number
JP2007027870A
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English (en)
Japanese (ja)
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JP2007214567A (ja
JP2007214567A5 (https=
Inventor
省贊 朴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2007214567A publication Critical patent/JP2007214567A/ja
Publication of JP2007214567A5 publication Critical patent/JP2007214567A5/ja
Application granted granted Critical
Publication of JP5190205B2 publication Critical patent/JP5190205B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP2007027870A 2006-02-07 2007-02-07 半導体素子の製造方法 Expired - Fee Related JP5190205B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060011569A KR100809324B1 (ko) 2006-02-07 2006-02-07 반도체 소자 및 그 제조 방법
KR10-2006-0011569 2006-02-07

Publications (3)

Publication Number Publication Date
JP2007214567A JP2007214567A (ja) 2007-08-23
JP2007214567A5 JP2007214567A5 (https=) 2010-03-25
JP5190205B2 true JP5190205B2 (ja) 2013-04-24

Family

ID=38333213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007027870A Expired - Fee Related JP5190205B2 (ja) 2006-02-07 2007-02-07 半導体素子の製造方法

Country Status (3)

Country Link
US (1) US7622759B2 (https=)
JP (1) JP5190205B2 (https=)
KR (1) KR100809324B1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090302479A1 (en) * 2008-06-06 2009-12-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Semiconductor structures having vias
KR101094380B1 (ko) * 2008-12-29 2011-12-15 주식회사 하이닉스반도체 금속콘택을 갖는 반도체장치 제조 방법
JP4945619B2 (ja) 2009-09-24 2012-06-06 株式会社東芝 半導体記憶装置
KR101123804B1 (ko) * 2009-11-20 2012-03-12 주식회사 하이닉스반도체 반도체 칩 및 이를 갖는 적층 반도체 패키지
KR101824735B1 (ko) * 2010-12-15 2018-02-01 에스케이하이닉스 주식회사 반도체 소자의 제조 방법
TWI447858B (zh) * 2012-02-03 2014-08-01 Inotera Memories Inc 隨機存取記憶體的製造方法
US8759977B2 (en) 2012-04-30 2014-06-24 International Business Machines Corporation Elongated via structures
US9324573B2 (en) 2013-01-24 2016-04-26 Ps5 Luxco S.A.R.L. Method for manufacturing semiconductor device
JP2015053337A (ja) 2013-09-05 2015-03-19 マイクロン テクノロジー， インク． 半導体装置及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970000384B1 (ko) 1994-01-10 1997-01-09 삼영전자공업 주식회사 키틴 및 키토산계 액상복합비료
KR970003848A (ko) * 1995-06-28 1997-01-29 김주용 반도체 소자의 콘택 제조방법
KR100291414B1 (ko) * 1998-05-04 2001-07-12 김영환 반도체장치의캐패시터및그제조방법
KR100307528B1 (ko) 1998-05-28 2001-11-02 김영환 반도체소자의다층배선구조제조방법
KR20010059181A (ko) 1999-12-30 2001-07-06 박종섭 반도체 소자의 콘택 플러그 형성방법
KR20010095943A (ko) * 2000-04-14 2001-11-07 윤종용 반도체 장치
JP4223189B2 (ja) * 2000-12-26 2009-02-12 富士通マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
JP3976703B2 (ja) 2003-04-30 2007-09-19 エルピーダメモリ株式会社 半導体装置の製造方法
JP2006024831A (ja) * 2004-07-09 2006-01-26 Sony Corp 半導体装置および半導体装置の製造方法
JP2007103410A (ja) * 2005-09-30 2007-04-19 Elpida Memory Inc 密集コンタクトホールを有する半導体デバイス

Also Published As

Publication number Publication date
JP2007214567A (ja) 2007-08-23
KR20070080346A (ko) 2007-08-10
US7622759B2 (en) 2009-11-24
US20070182017A1 (en) 2007-08-09
KR100809324B1 (ko) 2008-03-05

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