JP5182993B2 - 表示装置及びその作製方法 - Google Patents
表示装置及びその作製方法 Download PDFInfo
- Publication number
- JP5182993B2 JP5182993B2 JP2009073264A JP2009073264A JP5182993B2 JP 5182993 B2 JP5182993 B2 JP 5182993B2 JP 2009073264 A JP2009073264 A JP 2009073264A JP 2009073264 A JP2009073264 A JP 2009073264A JP 5182993 B2 JP5182993 B2 JP 5182993B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- semiconductor film
- signal line
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009073264A JP5182993B2 (ja) | 2008-03-31 | 2009-03-25 | 表示装置及びその作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008089241 | 2008-03-31 | ||
| JP2008089241 | 2008-03-31 | ||
| JP2009073264A JP5182993B2 (ja) | 2008-03-31 | 2009-03-25 | 表示装置及びその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013004150A Division JP5285817B2 (ja) | 2008-03-31 | 2013-01-14 | 表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009265635A JP2009265635A (ja) | 2009-11-12 |
| JP2009265635A5 JP2009265635A5 (https=) | 2012-02-23 |
| JP5182993B2 true JP5182993B2 (ja) | 2013-04-17 |
Family
ID=41115723
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009073264A Active JP5182993B2 (ja) | 2008-03-31 | 2009-03-25 | 表示装置及びその作製方法 |
| JP2013004150A Active JP5285817B2 (ja) | 2008-03-31 | 2013-01-14 | 表示装置 |
| JP2013115121A Active JP5685288B2 (ja) | 2008-03-31 | 2013-05-31 | 表示装置 |
| JP2015006406A Active JP5917728B2 (ja) | 2008-03-31 | 2015-01-16 | 表示装置 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013004150A Active JP5285817B2 (ja) | 2008-03-31 | 2013-01-14 | 表示装置 |
| JP2013115121A Active JP5685288B2 (ja) | 2008-03-31 | 2013-05-31 | 表示装置 |
| JP2015006406A Active JP5917728B2 (ja) | 2008-03-31 | 2015-01-16 | 表示装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8138500B2 (https=) |
| JP (4) | JP5182993B2 (https=) |
| CN (2) | CN101551559B (https=) |
| TW (1) | TWI499848B (https=) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5182993B2 (ja) * | 2008-03-31 | 2013-04-17 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
| JP2011221098A (ja) * | 2010-04-05 | 2011-11-04 | Seiko Epson Corp | 電気光学装置用基板、電気光学装置、及び電子機器 |
| US20120001179A1 (en) * | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5948025B2 (ja) * | 2010-08-06 | 2016-07-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| TWI422940B (zh) * | 2010-12-16 | 2014-01-11 | Innolux Corp | 陣列基板的形成方法 |
| TWI438539B (zh) | 2010-12-16 | 2014-05-21 | 群創光電股份有限公司 | 陣列基板的形成方法 |
| CN102543861B (zh) * | 2010-12-17 | 2014-12-31 | 群创光电股份有限公司 | 阵列基板的形成方法 |
| TWI843078B (zh) | 2011-05-05 | 2024-05-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR20150040873A (ko) * | 2012-08-03 | 2015-04-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8937307B2 (en) | 2012-08-10 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| DE102013216824B4 (de) | 2012-08-28 | 2024-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
| TWI611511B (zh) | 2012-08-31 | 2018-01-11 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置 |
| KR102679509B1 (ko) | 2012-09-13 | 2024-07-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR102459007B1 (ko) | 2012-12-25 | 2022-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9976762B2 (en) * | 2013-03-14 | 2018-05-22 | General Electric Company | Synthetic jet driven cooling device with increased volumetric flow |
| US9231002B2 (en) | 2013-05-03 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| JP6367655B2 (ja) * | 2013-09-13 | 2018-08-01 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2015179247A (ja) * | 2013-10-22 | 2015-10-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP6556998B2 (ja) * | 2013-11-28 | 2019-08-07 | 株式会社半導体エネルギー研究所 | 表示装置 |
| KR102122402B1 (ko) * | 2013-12-31 | 2020-06-15 | 엘지디스플레이 주식회사 | 씨오티 구조 액정표시장치 및 이의 제조방법 |
| CN103928472A (zh) * | 2014-03-26 | 2014-07-16 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法和显示装置 |
| CN105932030B (zh) * | 2016-06-08 | 2019-07-26 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
| SE542644C2 (en) * | 2017-05-30 | 2020-06-23 | Photon Sports Tech Ab | Method and camera arrangement for measuring a movement of a person |
| TWI636510B (zh) * | 2017-12-05 | 2018-09-21 | 友達光電股份有限公司 | 薄膜電晶體基板及其製造方法 |
| CN116868261A (zh) * | 2021-02-26 | 2023-10-10 | 株式会社半导体能源研究所 | 显示装置及电子设备 |
| CN116382009B (zh) * | 2023-04-21 | 2025-07-25 | 上海天马微电子有限公司 | 一种液晶光栅及显示装置 |
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| JPH0816756B2 (ja) | 1988-08-10 | 1996-02-21 | シャープ株式会社 | 透過型アクティブマトリクス液晶表示装置 |
| JPH0451140A (ja) * | 1990-06-19 | 1992-02-19 | Konica Corp | 圧力かぶり特性の良好なハロゲン化銀写真感光材料 |
| EP0473988A1 (en) * | 1990-08-29 | 1992-03-11 | International Business Machines Corporation | Method of fabricating a thin film transistor having amorphous/polycrystalline semiconductor channel region |
| JPH05289111A (ja) | 1992-04-13 | 1993-11-05 | Casio Comput Co Ltd | アクティブマトリックス液晶表示装置 |
| US5233448A (en) * | 1992-05-04 | 1993-08-03 | Industrial Technology Research Institute | Method of manufacturing a liquid crystal display panel including photoconductive electrostatic protection |
| JP3098345B2 (ja) | 1992-12-28 | 2000-10-16 | 富士通株式会社 | 薄膜トランジスタマトリクス装置及びその製造方法 |
| JP2556262B2 (ja) * | 1993-07-07 | 1996-11-20 | 日本電気株式会社 | 液晶表示パネル |
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| KR20020002089A (ko) | 2000-06-29 | 2002-01-09 | 주식회사 현대 디스플레이 테크놀로지 | 고개구율 액정 표시 소자의 제조방법 |
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| JP2004146691A (ja) * | 2002-10-25 | 2004-05-20 | Chi Mei Electronics Corp | 微結晶薄膜の成膜方法、薄膜トランジスタの製造方法、薄膜トランジスタおよび薄膜トランジスタを用いた画像表示装置 |
| US7133088B2 (en) * | 2002-12-23 | 2006-11-07 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display device and method of fabricating the same |
| JP4182779B2 (ja) * | 2003-03-07 | 2008-11-19 | カシオ計算機株式会社 | 表示装置およびその製造方法 |
| JP5030406B2 (ja) * | 2004-08-30 | 2012-09-19 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| KR101107246B1 (ko) * | 2004-12-24 | 2012-01-25 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
| JP4577114B2 (ja) * | 2005-06-23 | 2010-11-10 | ソニー株式会社 | 薄膜トランジスタの製造方法および表示装置の製造方法 |
| US7576359B2 (en) * | 2005-08-12 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
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| KR20090115222A (ko) | 2005-11-15 | 2009-11-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 제조방법 |
| TWI414842B (zh) * | 2005-11-15 | 2013-11-11 | Semiconductor Energy Lab | 顯示裝置 |
| US7554644B2 (en) * | 2006-01-27 | 2009-06-30 | Tpo Displays Corp. | LCD panel having capacitor disposed over or below photo spacer with active device also disposed between the photo spacer and a substrate, all disposed over opaque region of display |
| CN100474087C (zh) * | 2006-02-09 | 2009-04-01 | 胜华科技股份有限公司 | 薄膜晶体管液晶显示器的像素结构 |
| CN101512775A (zh) * | 2006-09-08 | 2009-08-19 | 夏普株式会社 | 半导体装置及其制造方法、显示装置 |
| KR100978265B1 (ko) * | 2006-12-29 | 2010-08-26 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
| US7998800B2 (en) * | 2007-07-06 | 2011-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2009049384A (ja) * | 2007-07-20 | 2009-03-05 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| CN100576045C (zh) * | 2007-08-31 | 2009-12-30 | 友达光电股份有限公司 | 液晶显示装置及其制造方法 |
| JP5182993B2 (ja) * | 2008-03-31 | 2013-04-17 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
-
2009
- 2009-03-25 JP JP2009073264A patent/JP5182993B2/ja active Active
- 2009-03-30 CN CN200910128358.1A patent/CN101551559B/zh not_active Expired - Fee Related
- 2009-03-30 TW TW098110498A patent/TWI499848B/zh active
- 2009-03-30 US US12/413,717 patent/US8138500B2/en not_active Expired - Fee Related
- 2009-03-30 CN CN201210216767.9A patent/CN102707529B/zh not_active Expired - Fee Related
-
2012
- 2012-03-19 US US13/423,874 patent/US8519398B2/en active Active
-
2013
- 2013-01-14 JP JP2013004150A patent/JP5285817B2/ja active Active
- 2013-05-31 JP JP2013115121A patent/JP5685288B2/ja active Active
-
2015
- 2015-01-16 JP JP2015006406A patent/JP5917728B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP5917728B2 (ja) | 2016-05-18 |
| JP2013190820A (ja) | 2013-09-26 |
| JP5285817B2 (ja) | 2013-09-11 |
| US20090242888A1 (en) | 2009-10-01 |
| JP2015111278A (ja) | 2015-06-18 |
| CN102707529A (zh) | 2012-10-03 |
| CN101551559A (zh) | 2009-10-07 |
| CN101551559B (zh) | 2013-01-09 |
| CN102707529B (zh) | 2015-05-20 |
| JP2013127626A (ja) | 2013-06-27 |
| US8138500B2 (en) | 2012-03-20 |
| JP2009265635A (ja) | 2009-11-12 |
| TWI499848B (zh) | 2015-09-11 |
| TW201003267A (en) | 2010-01-16 |
| US20120176576A1 (en) | 2012-07-12 |
| JP5685288B2 (ja) | 2015-03-18 |
| US8519398B2 (en) | 2013-08-27 |
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