JP5181466B2 - 半導体装置の製造方法および半導体装置 - Google Patents

半導体装置の製造方法および半導体装置 Download PDF

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Publication number
JP5181466B2
JP5181466B2 JP2006309828A JP2006309828A JP5181466B2 JP 5181466 B2 JP5181466 B2 JP 5181466B2 JP 2006309828 A JP2006309828 A JP 2006309828A JP 2006309828 A JP2006309828 A JP 2006309828A JP 5181466 B2 JP5181466 B2 JP 5181466B2
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Japan
Prior art keywords
layer
gate electrode
silicon substrate
sidewall
semiconductor device
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Active
Application number
JP2006309828A
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English (en)
Japanese (ja)
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JP2008124407A (ja
Inventor
尚之 佐藤
弘二郎 長岡
卓 新山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2006309828A priority Critical patent/JP5181466B2/ja
Priority to TW096136927A priority patent/TW200832564A/zh
Priority to US11/939,251 priority patent/US7858517B2/en
Priority to KR1020070116476A priority patent/KR101382676B1/ko
Publication of JP2008124407A publication Critical patent/JP2008124407A/ja
Application granted granted Critical
Publication of JP5181466B2 publication Critical patent/JP5181466B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/015—Manufacture or treatment removing at least parts of gate spacers, e.g. disposable spacers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2006309828A 2006-11-16 2006-11-16 半導体装置の製造方法および半導体装置 Active JP5181466B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006309828A JP5181466B2 (ja) 2006-11-16 2006-11-16 半導体装置の製造方法および半導体装置
TW096136927A TW200832564A (en) 2006-11-16 2007-10-02 Method of manufacturing semiconductor device, and semiconductor device
US11/939,251 US7858517B2 (en) 2006-11-16 2007-11-13 Method of manufacturing semiconductor device, and semiconductor device
KR1020070116476A KR101382676B1 (ko) 2006-11-16 2007-11-15 반도체 장치의 제조 방법, 및 반도체 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006309828A JP5181466B2 (ja) 2006-11-16 2006-11-16 半導体装置の製造方法および半導体装置

Publications (2)

Publication Number Publication Date
JP2008124407A JP2008124407A (ja) 2008-05-29
JP5181466B2 true JP5181466B2 (ja) 2013-04-10

Family

ID=39416094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006309828A Active JP5181466B2 (ja) 2006-11-16 2006-11-16 半導体装置の製造方法および半導体装置

Country Status (4)

Country Link
US (1) US7858517B2 (enExample)
JP (1) JP5181466B2 (enExample)
KR (1) KR101382676B1 (enExample)
TW (1) TW200832564A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101369907B1 (ko) * 2007-10-31 2014-03-04 주성엔지니어링(주) 트랜지스터 및 그 제조 방법
DE102008049725B4 (de) * 2008-09-30 2012-11-22 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg CMOS-Bauelement mit NMOS-Transistoren und PMOS-Transistoren mit stärkeren verformungsinduzierenden Quellen und Metallsilizidgebieten mit geringem Abstand und Verfahren zur Herstellung des Bauelements
US8450194B2 (en) * 2011-07-01 2013-05-28 Varian Semiconductor Equipment Associates, Inc. Method to modify the shape of a cavity using angled implantation
JP5520974B2 (ja) 2012-01-25 2014-06-11 東京エレクトロン株式会社 被処理基体の処理方法
CN103515317B (zh) * 2012-06-20 2016-02-03 中芯国际集成电路制造(上海)有限公司 一种cmos器件及其形成方法
DE112016001675B4 (de) * 2015-04-10 2024-03-28 Applied Materials, Inc. Verfahren zur Erhöhung der Wachstumsrate für ein selektives Expitaxialwachstum
TWI688042B (zh) * 2016-07-05 2020-03-11 聯華電子股份有限公司 半導體元件的製作方法
KR102452925B1 (ko) 2018-02-23 2022-10-07 삼성전자주식회사 반도체 장치 및 그 제조 방법
US12356705B2 (en) 2023-11-07 2025-07-08 Applied Materials, Inc. Electrical contact cavity structure and methods of forming the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1147552A1 (en) 1998-11-12 2001-10-24 Intel Corporation Field effect transistor structure with abrupt source/drain junctions
US6777298B2 (en) * 2002-06-14 2004-08-17 International Business Machines Corporation Elevated source drain disposable spacer CMOS
US6921913B2 (en) * 2003-03-04 2005-07-26 Taiwan Semiconductor Manufacturing Co., Ltd. Strained-channel transistor structure with lattice-mismatched zone
US7132338B2 (en) * 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
JP2005353831A (ja) * 2004-06-10 2005-12-22 Toshiba Corp 半導体装置
US7279406B2 (en) * 2004-12-22 2007-10-09 Texas Instruments Incorporated Tailoring channel strain profile by recessed material composition control
US20070221959A1 (en) * 2006-03-22 2007-09-27 International Business Machines Corporation Structure and method for fabricating recessed channel mosfet with fanned out tapered surface raised source/drain

Also Published As

Publication number Publication date
US20080116532A1 (en) 2008-05-22
KR20080044779A (ko) 2008-05-21
US7858517B2 (en) 2010-12-28
TWI379360B (enExample) 2012-12-11
KR101382676B1 (ko) 2014-04-07
JP2008124407A (ja) 2008-05-29
TW200832564A (en) 2008-08-01

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