JP5178026B2 - 微小構造体、半導体装置、及び微小構造体の作製方法 - Google Patents

微小構造体、半導体装置、及び微小構造体の作製方法 Download PDF

Info

Publication number
JP5178026B2
JP5178026B2 JP2007046717A JP2007046717A JP5178026B2 JP 5178026 B2 JP5178026 B2 JP 5178026B2 JP 2007046717 A JP2007046717 A JP 2007046717A JP 2007046717 A JP2007046717 A JP 2007046717A JP 5178026 B2 JP5178026 B2 JP 5178026B2
Authority
JP
Japan
Prior art keywords
layer
microstructure
film
sacrificial layer
structural layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007046717A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007268704A (ja
JP2007268704A5 (enExample
Inventor
真弓 山口
小波 泉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007046717A priority Critical patent/JP5178026B2/ja
Publication of JP2007268704A publication Critical patent/JP2007268704A/ja
Publication of JP2007268704A5 publication Critical patent/JP2007268704A5/ja
Application granted granted Critical
Publication of JP5178026B2 publication Critical patent/JP5178026B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2007046717A 2006-03-10 2007-02-27 微小構造体、半導体装置、及び微小構造体の作製方法 Expired - Fee Related JP5178026B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007046717A JP5178026B2 (ja) 2006-03-10 2007-02-27 微小構造体、半導体装置、及び微小構造体の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006066786 2006-03-10
JP2006066786 2006-03-10
JP2007046717A JP5178026B2 (ja) 2006-03-10 2007-02-27 微小構造体、半導体装置、及び微小構造体の作製方法

Publications (3)

Publication Number Publication Date
JP2007268704A JP2007268704A (ja) 2007-10-18
JP2007268704A5 JP2007268704A5 (enExample) 2010-04-02
JP5178026B2 true JP5178026B2 (ja) 2013-04-10

Family

ID=38672023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007046717A Expired - Fee Related JP5178026B2 (ja) 2006-03-10 2007-02-27 微小構造体、半導体装置、及び微小構造体の作製方法

Country Status (1)

Country Link
JP (1) JP5178026B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2129619A2 (en) 2007-04-04 2009-12-09 Qualcomm Mems Technologies, Inc. Eliminate release etch attack by interface modification in sacrificial layers
JP4853530B2 (ja) 2009-02-27 2012-01-11 株式会社豊田中央研究所 可動部を有するマイクロデバイス
JP6587870B2 (ja) * 2015-09-01 2019-10-09 アズビル株式会社 微細機械装置およびその製造方法
JP6646018B2 (ja) * 2016-09-02 2020-02-14 ダイセルポリマー株式会社 金属成形体の粗面化方法
CN113764261B (zh) * 2020-10-15 2023-08-22 腾讯科技（深圳）有限公司 空桥结构及其制作方法、超导量子芯片及其制作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3489273B2 (ja) * 1995-06-27 2004-01-19 株式会社デンソー 半導体力学量センサの製造方法
JP3050163B2 (ja) * 1997-05-12 2000-06-12 日本電気株式会社 マイクロアクチュエータおよびその製造方法
JP3592535B2 (ja) * 1998-07-16 2004-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3855598B2 (ja) * 2000-05-11 2006-12-13 セイコーエプソン株式会社 光スイッチングユニット、光スイッチングデバイス、光ガイド、および光スイッチングユニットの製造方法、映像表示装置
US6531331B1 (en) * 2002-07-16 2003-03-11 Sandia Corporation Monolithic integration of a MOSFET with a MEMS device
JP2004212637A (ja) * 2002-12-27 2004-07-29 Fuji Photo Film Co Ltd 光変調素子及び平面表示素子
FR2857002B1 (fr) * 2003-07-04 2005-10-21 Commissariat Energie Atomique Procede de desolidarisation d'une couche utile et composant obtenu par ce procede
JP2007021713A (ja) * 2005-06-17 2007-02-01 Semiconductor Energy Lab Co Ltd 半導体装置、およびその作製方法

Also Published As

Publication number Publication date
JP2007268704A (ja) 2007-10-18

Similar Documents

Publication Publication Date Title
CN101033057B (zh) 微结构、半导体器件、以及微结构的制造方法
US8058145B2 (en) Micro-electro-mechanical device and manufacturing method for the same
CN1911779B (zh) 半导体器件及其制造方法
CN1899951B (zh) 半导体器件及其制造方法
CN101041413B (zh) 微机械及其制造方法
TWI395258B (zh) 微結構以及微機電系統的製造方法
US7732241B2 (en) Microstructure and manufacturing method thereof and microelectromechanical system
JP2007268704A (ja) 微小構造体、半導体装置、及び微小構造体の作製方法
JP5095244B2 (ja) マイクロマシン、およびその作製方法
JP4519804B2 (ja) 半導体装置の作製方法
US8093088B2 (en) Manufacturing method of micro-electro-mechanical device
JP4907297B2 (ja) 微小構造体及び微小電気機械式装置の作製方法
JP5127181B2 (ja) 微小電気機械式装置の作製方法
JP4939873B2 (ja) 微小電気機械式装置の作製方法
JP4762621B2 (ja) 微小電気機械式装置の作製方法
JP5084175B2 (ja) 微小構造体、およびその作製方法
JP4995503B2 (ja) 微小電気機械式装置の作製方法
JP2007152554A (ja) 半導体装置
JP2007021713A (ja) 半導体装置、およびその作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100210

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100210

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120511

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120522

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120711

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120821

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121009

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130108

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130108

R150 Certificate of patent or registration of utility model

Ref document number: 5178026

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160118

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees