JP5175880B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5175880B2 JP5175880B2 JP2010038547A JP2010038547A JP5175880B2 JP 5175880 B2 JP5175880 B2 JP 5175880B2 JP 2010038547 A JP2010038547 A JP 2010038547A JP 2010038547 A JP2010038547 A JP 2010038547A JP 5175880 B2 JP5175880 B2 JP 5175880B2
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Claims (1)
- 半絶縁性半導体基板上に、オーミック電極を備えた能動素子と、下側電極と上側電極との間に誘電体層が介在するMIMキャパシタとが設けられた半導体装置であって、
前記能動素子は、前記半絶縁性半導体基板上に設けられたn型半導体層およびp型半導体層と、前記n型半導体層上に設けられた第1のオーミック電極と、前記p型半導体層上に設けられた第2のオーミック電極とを具備し、
前記下側電極は前記第1のオーミック電極と前記第2のオーミック電極とが積層されてなる構造と同じ構造を有し、かつ、前記半絶縁性半導体基板と前記下側電極との間には絶縁膜が設けられていることを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2010038547A JP5175880B2 (ja) | 2010-02-24 | 2010-02-24 | 半導体装置 |
Applications Claiming Priority (1)
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JP2010038547A JP5175880B2 (ja) | 2010-02-24 | 2010-02-24 | 半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007070053A Division JP2008235403A (ja) | 2007-03-19 | 2007-03-19 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2010157758A JP2010157758A (ja) | 2010-07-15 |
JP5175880B2 true JP5175880B2 (ja) | 2013-04-03 |
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JP2010038547A Expired - Fee Related JP5175880B2 (ja) | 2010-02-24 | 2010-02-24 | 半導体装置 |
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Family Cites Families (1)
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JP3450242B2 (ja) * | 1999-11-26 | 2003-09-22 | Necエレクトロニクス株式会社 | 化合物半導体集積回路の製造方法 |
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