JP5170051B2 - Ｉｉｉ族窒化物半導体の製造方法 - Google Patents
Ｉｉｉ族窒化物半導体の製造方法 Download PDFInfo
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- JP5170051B2 JP5170051B2 JP2009226654A JP2009226654A JP5170051B2 JP 5170051 B2 JP5170051 B2 JP 5170051B2 JP 2009226654 A JP2009226654 A JP 2009226654A JP 2009226654 A JP2009226654 A JP 2009226654A JP 5170051 B2 JP5170051 B2 JP 5170051B2
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- nitride semiconductor
- group iii
- iii nitride
- plane
- convex
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- 239000004065 semiconductor Substances 0.000 title claims description 48
- 150000004767 nitrides Chemical class 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 229910052594 sapphire Inorganic materials 0.000 claims description 61
- 239000010980 sapphire Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 60
- 238000000034 method Methods 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 239000010410 layer Substances 0.000 description 62
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000001788 irregular Effects 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009226654A JP5170051B2 (ja) | 2009-09-30 | 2009-09-30 | Ｉｉｉ族窒化物半導体の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009226654A JP5170051B2 (ja) | 2009-09-30 | 2009-09-30 | Ｉｉｉ族窒化物半導体の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011077265A JP2011077265A (ja) | 2011-04-14 |
| JP2011077265A5 JP2011077265A5 (enExample) | 2011-12-08 |
| JP5170051B2 true JP5170051B2 (ja) | 2013-03-27 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009226654A Active JP5170051B2 (ja) | 2009-09-30 | 2009-09-30 | Ｉｉｉ族窒化物半導体の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5170051B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101843627B1 (ko) * | 2013-05-31 | 2018-03-29 | 아사히 가세이 가부시키가이샤 | Led용 패턴 웨이퍼, led용 에피택셜 웨이퍼 및 led용 에피택셜 웨이퍼의 제조 방법 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4865047B2 (ja) * | 2010-02-24 | 2012-02-01 | 株式会社東芝 | 結晶成長方法 |
| JP5811009B2 (ja) * | 2012-03-30 | 2015-11-11 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体 |
| JP6020357B2 (ja) | 2013-05-31 | 2016-11-02 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体 |
| JP5848814B2 (ja) * | 2014-11-20 | 2016-01-27 | 株式会社東芝 | 窒化物半導体素子 |
| WO2018197858A1 (en) * | 2017-04-24 | 2018-11-01 | Bergen Teknologioverføring As | Microstructured sapphire substrates |
| CN109686820B (zh) * | 2018-11-21 | 2020-12-22 | 华灿光电（浙江）有限公司 | 一种发光二极管外延片的制造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3987660B2 (ja) * | 1998-07-31 | 2007-10-10 | シャープ株式会社 | 窒化物半導体構造とその製法および発光素子 |
| JP3427047B2 (ja) * | 1999-09-24 | 2003-07-14 | 三洋電機株式会社 | 窒化物系半導体素子、窒化物系半導体の形成方法および窒化物系半導体素子の製造方法 |
| JP4513446B2 (ja) * | 2004-07-23 | 2010-07-28 | 豊田合成株式会社 | 半導体結晶の結晶成長方法 |
| JP4571476B2 (ja) * | 2004-10-18 | 2010-10-27 | ローム株式会社 | 半導体装置の製造方法 |
| JP2006165070A (ja) * | 2004-12-02 | 2006-06-22 | Mitsubishi Cable Ind Ltd | 窒化物半導体結晶の製造方法 |
| JP4857616B2 (ja) * | 2005-06-17 | 2012-01-18 | ソニー株式会社 | ＧａＮ系化合物半導体層の形成方法、及び、ＧａＮ系半導体発光素子の製造方法 |
| JP4998701B2 (ja) * | 2006-01-12 | 2012-08-15 | 独立行政法人産業技術総合研究所 | Ｉｉｉ−ｖ族化合物半導体発光ダイオード |
| JP2007281140A (ja) * | 2006-04-05 | 2007-10-25 | Hamamatsu Photonics Kk | 化合物半導体基板、その製造方法及び半導体デバイス |
| JP4793132B2 (ja) * | 2006-06-28 | 2011-10-12 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体の製造方法 |
| JP4908381B2 (ja) * | 2006-12-22 | 2012-04-04 | 昭和電工株式会社 | Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ |
| JP4935700B2 (ja) * | 2008-02-01 | 2012-05-23 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体の製造方法、ウエハ、ｉｉｉ族窒化物系化合物半導体素子 |
| JP5644996B2 (ja) * | 2009-09-30 | 2014-12-24 | 国立大学法人三重大学 | 窒化物光半導体素子 |
-
2009
- 2009-09-30 JP JP2009226654A patent/JP5170051B2/ja active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101843627B1 (ko) * | 2013-05-31 | 2018-03-29 | 아사히 가세이 가부시키가이샤 | Led용 패턴 웨이퍼, led용 에피택셜 웨이퍼 및 led용 에피택셜 웨이퍼의 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011077265A (ja) | 2011-04-14 |
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