JP5165583B2 - 受動集積デバイスのためのｅｓｄ保護 - Google Patents

受動集積デバイスのためのｅｓｄ保護 Download PDF

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Publication number
JP5165583B2
JP5165583B2 JP2008545902A JP2008545902A JP5165583B2 JP 5165583 B2 JP5165583 B2 JP 5165583B2 JP 2008545902 A JP2008545902 A JP 2008545902A JP 2008545902 A JP2008545902 A JP 2008545902A JP 5165583 B2 JP5165583 B2 JP 5165583B2
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Japan
Prior art keywords
substrate
esd
forming
integrated passive
layer
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JP2008545902A
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English (en)
Japanese (ja)
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JP2009520368A (ja
JP2009520368A5 (https=
Inventor
ミトラ、アグニ
ジー． ヒル、ダレル
ラジャゴパラン、カーシック
シー． レイズ、アドルフォ
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/80—Arrangements for protection of devices protecting against overcurrent or overload, e.g. fuses or shunts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49204—Contact or terminal manufacturing

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  • Semiconductor Integrated Circuits (AREA)
JP2008545902A 2005-12-14 2006-11-29 受動集積デバイスのためのｅｓｄ保護 Expired - Fee Related JP5165583B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/300,710 US7335955B2 (en) 2005-12-14 2005-12-14 ESD protection for passive integrated devices
US11/300,710 2005-12-14
PCT/US2006/061311 WO2007120295A2 (en) 2005-12-14 2006-11-29 Esd protection for passive integrated devices

Publications (3)

Publication Number Publication Date
JP2009520368A JP2009520368A (ja) 2009-05-21
JP2009520368A5 JP2009520368A5 (https=) 2010-01-14
JP5165583B2 true JP5165583B2 (ja) 2013-03-21

Family

ID=38138437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008545902A Expired - Fee Related JP5165583B2 (ja) 2005-12-14 2006-11-29 受動集積デバイスのためのｅｓｄ保護

Country Status (5)

Country Link
US (2) US7335955B2 (https=)
JP (1) JP5165583B2 (https=)
CN (1) CN101331658B (https=)
TW (1) TWI390705B (https=)
WO (1) WO2007120295A2 (https=)

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US8269308B2 (en) * 2008-03-19 2012-09-18 Stats Chippac, Ltd. Semiconductor device with cross-talk isolation using M-cap and method thereof
US7772080B2 (en) * 2008-07-02 2010-08-10 Stats Chippac, Ltd. Semiconductor device and method of providing electrostatic discharge protection for integrated passive devices
US9343900B2 (en) * 2008-07-24 2016-05-17 Robert Bosch Gmbh Passive network for electrostatic protection of integrated circuits
US7973358B2 (en) * 2008-08-07 2011-07-05 Infineon Technologies Ag Coupler structure
TWI424544B (zh) * 2011-03-31 2014-01-21 聯詠科技股份有限公司 積體電路裝置
US9281681B2 (en) 2012-11-21 2016-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuits and methods
CN105633926A (zh) * 2014-10-31 2016-06-01 展讯通信（上海）有限公司 实现集成无源电路静电防护的结构
CN105575300B (zh) * 2015-12-16 2018-11-09 武汉华星光电技术有限公司 阵列基板的esd检测方法
WO2017196149A1 (ko) * 2016-05-13 2017-11-16 주식회사 모다이노칩 컨택터 및 이를 구비하는 전자기기
US11329013B2 (en) 2020-05-28 2022-05-10 Nxp Usa, Inc. Interconnected substrate arrays containing electrostatic discharge protection grids and associated microelectronic packages

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US5946176A (en) * 1998-08-17 1999-08-31 International Business Machines Corporation Electrostatic discharge protection utilizing microelectromechanical switch
JP3675303B2 (ja) * 2000-05-31 2005-07-27 セイコーエプソン株式会社 静電気保護回路が内蔵された半導体装置及びその製造方法
JP3759381B2 (ja) * 2000-07-17 2006-03-22 アルプス電気株式会社 電子回路基板
US6472286B1 (en) * 2000-08-09 2002-10-29 Taiwan Semiconductor Manufacturing Company Bipolar ESD protection structure
KR100386109B1 (ko) * 2000-11-08 2003-06-02 삼성전자주식회사 2단 메탈콘택구조를 가진 반도체 메모리 장치 및 그제조방법
US7005708B2 (en) * 2001-06-14 2006-02-28 Sarnoff Corporation Minimum-dimension, fully-silicided MOS driver and ESD protection design for optimized inter-finger coupling
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US20030058591A1 (en) * 2001-09-26 2003-03-27 Jeffrey Johnson Electro-static discharge protection for high frequency port on an integrated circuit
US6706548B2 (en) * 2002-01-08 2004-03-16 Motorola, Inc. Method of making a micromechanical device
US6710990B2 (en) * 2002-01-22 2004-03-23 Lsi Logic Corporation Low voltage breakdown element for ESD trigger device
US6762466B2 (en) * 2002-04-11 2004-07-13 United Microelectronics Corp. Circuit structure for connecting bonding pad and ESD protection circuit
US20030202307A1 (en) * 2002-04-26 2003-10-30 Kei-Kang Hung Semiconductor device with ESD protection
WO2004015764A2 (en) * 2002-08-08 2004-02-19 Leedy Glenn J Vertical system integration
JP4312451B2 (ja) * 2002-12-24 2009-08-12 Ｎｅｃエレクトロニクス株式会社 静電気保護素子及び半導体装置
JP3713490B2 (ja) * 2003-02-18 2005-11-09 株式会社東芝 半導体装置
US6798022B1 (en) * 2003-03-11 2004-09-28 Oki Electric Industry Co., Ltd. Semiconductor device with improved protection from electrostatic discharge
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US6939726B2 (en) * 2003-08-04 2005-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Via array monitor and method of monitoring induced electrical charging
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TWI227560B (en) * 2003-09-03 2005-02-01 Macronix Int Co Ltd Electrostatic discharge protection circuit and its method through control of substrate potential
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US6987300B2 (en) * 2004-03-25 2006-01-17 Microchip Technology Incorporated High voltage ESD-protection structure
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TWI240403B (en) * 2004-04-29 2005-09-21 Via Tech Inc Electrostatic discharge protection circuit
US20050254189A1 (en) * 2004-05-07 2005-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. ESD protection circuit with low parasitic capacitance
US7161784B2 (en) * 2004-06-30 2007-01-09 Research In Motion Limited Spark gap apparatus and method for electrostatic discharge protection
US20060043490A1 (en) * 2004-09-02 2006-03-02 Texas Instruments Incorporated Electrostatic discharge (ESD) detection and protection
JP4028863B2 (ja) * 2004-09-10 2007-12-26 富士通株式会社 基板製造方法
US7385252B2 (en) * 2004-09-27 2008-06-10 Taiwan Semiconductor Manufacturing Company, Ltd. ESD protection for high voltage applications
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US7495335B2 (en) * 2005-05-16 2009-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of reducing process steps in metal line protective structure formation

Also Published As

Publication number Publication date
CN101331658B (zh) 2012-09-26
US20070132029A1 (en) 2007-06-14
US7335955B2 (en) 2008-02-26
WO2007120295A3 (en) 2008-04-10
TWI390705B (zh) 2013-03-21
JP2009520368A (ja) 2009-05-21
US20080108217A1 (en) 2008-05-08
TW200733347A (en) 2007-09-01
WO2007120295A2 (en) 2007-10-25
CN101331658A (zh) 2008-12-24
US7642182B2 (en) 2010-01-05

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