JP5164981B2 - 相変化合金のエッチング方法及び装置 - Google Patents

相変化合金のエッチング方法及び装置 Download PDF

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Publication number
JP5164981B2
JP5164981B2 JP2009518436A JP2009518436A JP5164981B2 JP 5164981 B2 JP5164981 B2 JP 5164981B2 JP 2009518436 A JP2009518436 A JP 2009518436A JP 2009518436 A JP2009518436 A JP 2009518436A JP 5164981 B2 JP5164981 B2 JP 5164981B2
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Japan
Prior art keywords
phase change
etching
gas
containing compound
change layer
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JP2009518436A
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English (en)
Japanese (ja)
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JP2009543351A5 (enExample
JP2009543351A (ja
Inventor
フー・チエン
リュー・シェンジアン
リー・リンダ・ファン−ミン
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Lam Research Corp
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Lam Research Corp
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Publication of JP2009543351A5 publication Critical patent/JP2009543351A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
JP2009518436A 2006-06-29 2007-06-08 相変化合金のエッチング方法及び装置 Active JP5164981B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/479,303 US7682979B2 (en) 2006-06-29 2006-06-29 Phase change alloy etch
US11/479,303 2006-06-29
PCT/US2007/070795 WO2008002760A1 (en) 2006-06-29 2007-06-08 Phase change alloy etch

Publications (3)

Publication Number Publication Date
JP2009543351A JP2009543351A (ja) 2009-12-03
JP2009543351A5 JP2009543351A5 (enExample) 2012-04-26
JP5164981B2 true JP5164981B2 (ja) 2013-03-21

Family

ID=38596720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009518436A Active JP5164981B2 (ja) 2006-06-29 2007-06-08 相変化合金のエッチング方法及び装置

Country Status (7)

Country Link
US (1) US7682979B2 (enExample)
EP (1) EP2036140A1 (enExample)
JP (1) JP5164981B2 (enExample)
KR (1) KR101445402B1 (enExample)
CN (1) CN101485006B (enExample)
TW (1) TWI443736B (enExample)
WO (1) WO2008002760A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100838527B1 (ko) * 2006-07-31 2008-06-17 삼성전자주식회사 상변화 기억소자 형성 방법
US8283255B2 (en) * 2007-05-24 2012-10-09 Lam Research Corporation In-situ photoresist strip during plasma etching of active hard mask
WO2012140887A1 (ja) 2011-04-14 2012-10-18 パナソニック株式会社 不揮発性記憶素子およびその製造方法
DE112012005906A5 (de) * 2012-05-30 2014-10-30 Ev Group E. Thallner Gmbh Vorrichtung und Verfahren zum Bonden von Substraten
US10211054B1 (en) 2017-11-03 2019-02-19 International Business Machines Corporation Tone inversion integration for phase change memory
US11699596B2 (en) * 2018-11-30 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Metal etching with in situ plasma ashing
JP7482684B2 (ja) * 2020-05-21 2024-05-14 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087689A (en) 1997-06-16 2000-07-11 Micron Technology, Inc. Memory cell having a reduced active area and a memory array incorporating the same
US6673262B1 (en) * 1997-12-18 2004-01-06 Central Glass Company, Limited Gas for removing deposit and removal method using same
US20030000924A1 (en) 2001-06-29 2003-01-02 Tokyo Electron Limited Apparatus and method of gas injection sequencing
EP1475848B1 (en) * 2003-05-07 2006-12-20 STMicroelectronics S.r.l. Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells
JP2006528432A (ja) 2003-07-21 2006-12-14 ウナクシス ユーエスエイ、インコーポレイテッド カルコゲニド記憶素子を製造するためのエッチング法
JP2005340554A (ja) * 2004-05-28 2005-12-08 Hitachi Ltd 半導体記憶装置の製造方法
TWI318003B (en) * 2005-11-21 2009-12-01 Macronix Int Co Ltd Air cell thermal isolation for a memory array formed of a programmable resistive material
US20070158632A1 (en) * 2006-01-09 2007-07-12 Macronix International Co., Ltd. Method for Fabricating a Pillar-Shaped Phase Change Memory Element

Also Published As

Publication number Publication date
CN101485006B (zh) 2011-12-14
US20090130855A1 (en) 2009-05-21
JP2009543351A (ja) 2009-12-03
KR101445402B1 (ko) 2014-09-26
CN101485006A (zh) 2009-07-15
EP2036140A1 (en) 2009-03-18
TWI443736B (zh) 2014-07-01
US7682979B2 (en) 2010-03-23
KR20090034903A (ko) 2009-04-08
TW200820340A (en) 2008-05-01
WO2008002760A1 (en) 2008-01-03

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