KR101445402B1 - 상 변화 합금 식각 - Google Patents

상 변화 합금 식각 Download PDF

Info

Publication number
KR101445402B1
KR101445402B1 KR1020097001397A KR20097001397A KR101445402B1 KR 101445402 B1 KR101445402 B1 KR 101445402B1 KR 1020097001397 A KR1020097001397 A KR 1020097001397A KR 20097001397 A KR20097001397 A KR 20097001397A KR 101445402 B1 KR101445402 B1 KR 101445402B1
Authority
KR
South Korea
Prior art keywords
gas
containing compound
phase change
etching
flow rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020097001397A
Other languages
English (en)
Korean (ko)
Other versions
KR20090034903A (ko
Inventor
쳰 푸
선? 류
린다 풍-밍 리
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20090034903A publication Critical patent/KR20090034903A/ko
Application granted granted Critical
Publication of KR101445402B1 publication Critical patent/KR101445402B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
KR1020097001397A 2006-06-29 2007-06-08 상 변화 합금 식각 Active KR101445402B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/479,303 US7682979B2 (en) 2006-06-29 2006-06-29 Phase change alloy etch
US11/479,303 2006-06-29
PCT/US2007/070795 WO2008002760A1 (en) 2006-06-29 2007-06-08 Phase change alloy etch

Publications (2)

Publication Number Publication Date
KR20090034903A KR20090034903A (ko) 2009-04-08
KR101445402B1 true KR101445402B1 (ko) 2014-09-26

Family

ID=38596720

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097001397A Active KR101445402B1 (ko) 2006-06-29 2007-06-08 상 변화 합금 식각

Country Status (7)

Country Link
US (1) US7682979B2 (enExample)
EP (1) EP2036140A1 (enExample)
JP (1) JP5164981B2 (enExample)
KR (1) KR101445402B1 (enExample)
CN (1) CN101485006B (enExample)
TW (1) TWI443736B (enExample)
WO (1) WO2008002760A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100838527B1 (ko) * 2006-07-31 2008-06-17 삼성전자주식회사 상변화 기억소자 형성 방법
US8283255B2 (en) * 2007-05-24 2012-10-09 Lam Research Corporation In-situ photoresist strip during plasma etching of active hard mask
WO2012140887A1 (ja) 2011-04-14 2012-10-18 パナソニック株式会社 不揮発性記憶素子およびその製造方法
JP2015525468A (ja) * 2012-05-30 2015-09-03 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板同士をボンディングする装置および方法
US10211054B1 (en) 2017-11-03 2019-02-19 International Business Machines Corporation Tone inversion integration for phase change memory
US11699596B2 (en) * 2018-11-30 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Metal etching with in situ plasma ashing
JP7482684B2 (ja) * 2020-05-21 2024-05-14 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030000924A1 (en) * 2001-06-29 2003-01-02 Tokyo Electron Limited Apparatus and method of gas injection sequencing
WO2005011011A1 (en) * 2003-07-21 2005-02-03 Unaxis Usa Inc. Etching method for making chalcogenide memory elements
JP2005340554A (ja) * 2004-05-28 2005-12-08 Hitachi Ltd 半導体記憶装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087689A (en) 1997-06-16 2000-07-11 Micron Technology, Inc. Memory cell having a reduced active area and a memory array incorporating the same
US6673262B1 (en) * 1997-12-18 2004-01-06 Central Glass Company, Limited Gas for removing deposit and removal method using same
EP1475848B1 (en) * 2003-05-07 2006-12-20 STMicroelectronics S.r.l. Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells
CN100524878C (zh) * 2005-11-21 2009-08-05 旺宏电子股份有限公司 具有空气绝热单元的可编程电阻材料存储阵列
US20070158632A1 (en) * 2006-01-09 2007-07-12 Macronix International Co., Ltd. Method for Fabricating a Pillar-Shaped Phase Change Memory Element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030000924A1 (en) * 2001-06-29 2003-01-02 Tokyo Electron Limited Apparatus and method of gas injection sequencing
WO2005011011A1 (en) * 2003-07-21 2005-02-03 Unaxis Usa Inc. Etching method for making chalcogenide memory elements
JP2005340554A (ja) * 2004-05-28 2005-12-08 Hitachi Ltd 半導体記憶装置の製造方法

Also Published As

Publication number Publication date
CN101485006A (zh) 2009-07-15
KR20090034903A (ko) 2009-04-08
CN101485006B (zh) 2011-12-14
TWI443736B (zh) 2014-07-01
WO2008002760A1 (en) 2008-01-03
JP5164981B2 (ja) 2013-03-21
TW200820340A (en) 2008-05-01
EP2036140A1 (en) 2009-03-18
JP2009543351A (ja) 2009-12-03
US7682979B2 (en) 2010-03-23
US20090130855A1 (en) 2009-05-21

Similar Documents

Publication Publication Date Title
JP4777337B2 (ja) エッチング方法及び装置
JP5632280B2 (ja) 異なるアスペクト比の構成を誘電層内にエッチングするための方法、及びその方法によって作成される半導体デバイス、並びにそのための装置
JP5081917B2 (ja) フッ素除去プロセス
KR101392121B1 (ko) 잔유물 없는 하드마스크 트림
US20070056925A1 (en) Selective etch of films with high dielectric constant with H2 addition
US9659783B2 (en) High aspect ratio etch with combination mask
KR101445402B1 (ko) 상 변화 합금 식각
JP5070196B2 (ja) エッチングプロセスのための安定化したフォトレジスト構成
US10242883B2 (en) High aspect ratio etch of oxide metal oxide metal stack
KR101690337B1 (ko) Ｈ₂플라즈마 처리법을 이용한 유기 선폭 조도의 개선
JP6255187B2 (ja) シリコン酸化膜をエッチングする方法
SG191579A1 (en) Selective inductive double patterning
KR101605005B1 (ko) Ａｒｃ 층 오프닝을 이용한 ｃｄ 바이어스 로딩 제어
US12230479B2 (en) Processing chamber with multiple plasma units
KR101380544B1 (ko) 핀 구조물 형성
US20050153563A1 (en) Selective etch of films with high dielectric constant

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20090122

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20120607

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20130510

Patent event code: PE09021S01D

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

Comment text: Final Notice of Reason for Refusal

Patent event date: 20131204

Patent event code: PE09021S02D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20140624

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20140922

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20140922

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20170911

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20170911

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20180905

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20180905

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20190910

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20190910

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20200909

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20210908

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20220907

Start annual number: 9

End annual number: 9