TWI443736B - 相變化合金蝕刻 - Google Patents
相變化合金蝕刻 Download PDFInfo
- Publication number
- TWI443736B TWI443736B TW096122069A TW96122069A TWI443736B TW I443736 B TWI443736 B TW I443736B TW 096122069 A TW096122069 A TW 096122069A TW 96122069 A TW96122069 A TW 96122069A TW I443736 B TWI443736 B TW I443736B
- Authority
- TW
- Taiwan
- Prior art keywords
- containing compound
- gas
- phase change
- etching
- hbr
- Prior art date
Links
- 229910045601 alloy Inorganic materials 0.000 title description 2
- 239000000956 alloy Substances 0.000 title description 2
- 238000005530 etching Methods 0.000 claims description 40
- 238000012545 processing Methods 0.000 claims description 31
- 150000001875 compounds Chemical class 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 27
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 15
- 229910052794 bromium Inorganic materials 0.000 claims description 15
- 239000000460 chlorine Substances 0.000 claims description 14
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 13
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 10
- 229910052801 chlorine Inorganic materials 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims description 3
- -1 bromine compound Chemical class 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 229910001152 Bi alloy Inorganic materials 0.000 claims 2
- 229910001257 Nb alloy Inorganic materials 0.000 claims 2
- 229910001245 Sb alloy Inorganic materials 0.000 claims 2
- 229910001362 Ta alloys Inorganic materials 0.000 claims 2
- 239000010955 niobium Substances 0.000 claims 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 30
- 238000009616 inductively coupled plasma Methods 0.000 description 14
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000001816 cooling Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000636 Ce alloy Inorganic materials 0.000 description 2
- 229910000858 La alloy Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000009528 severe injury Effects 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/479,303 US7682979B2 (en) | 2006-06-29 | 2006-06-29 | Phase change alloy etch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200820340A TW200820340A (en) | 2008-05-01 |
| TWI443736B true TWI443736B (zh) | 2014-07-01 |
Family
ID=38596720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096122069A TWI443736B (zh) | 2006-06-29 | 2007-06-20 | 相變化合金蝕刻 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7682979B2 (enExample) |
| EP (1) | EP2036140A1 (enExample) |
| JP (1) | JP5164981B2 (enExample) |
| KR (1) | KR101445402B1 (enExample) |
| CN (1) | CN101485006B (enExample) |
| TW (1) | TWI443736B (enExample) |
| WO (1) | WO2008002760A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100838527B1 (ko) * | 2006-07-31 | 2008-06-17 | 삼성전자주식회사 | 상변화 기억소자 형성 방법 |
| US8283255B2 (en) * | 2007-05-24 | 2012-10-09 | Lam Research Corporation | In-situ photoresist strip during plasma etching of active hard mask |
| WO2012140887A1 (ja) | 2011-04-14 | 2012-10-18 | パナソニック株式会社 | 不揮発性記憶素子およびその製造方法 |
| DE112012005906A5 (de) * | 2012-05-30 | 2014-10-30 | Ev Group E. Thallner Gmbh | Vorrichtung und Verfahren zum Bonden von Substraten |
| US10211054B1 (en) | 2017-11-03 | 2019-02-19 | International Business Machines Corporation | Tone inversion integration for phase change memory |
| US11699596B2 (en) * | 2018-11-30 | 2023-07-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal etching with in situ plasma ashing |
| JP7482684B2 (ja) * | 2020-05-21 | 2024-05-14 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6087689A (en) | 1997-06-16 | 2000-07-11 | Micron Technology, Inc. | Memory cell having a reduced active area and a memory array incorporating the same |
| US6673262B1 (en) * | 1997-12-18 | 2004-01-06 | Central Glass Company, Limited | Gas for removing deposit and removal method using same |
| US20030000924A1 (en) | 2001-06-29 | 2003-01-02 | Tokyo Electron Limited | Apparatus and method of gas injection sequencing |
| EP1475848B1 (en) * | 2003-05-07 | 2006-12-20 | STMicroelectronics S.r.l. | Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells |
| JP2006528432A (ja) | 2003-07-21 | 2006-12-14 | ウナクシス ユーエスエイ、インコーポレイテッド | カルコゲニド記憶素子を製造するためのエッチング法 |
| JP2005340554A (ja) * | 2004-05-28 | 2005-12-08 | Hitachi Ltd | 半導体記憶装置の製造方法 |
| TWI318003B (en) * | 2005-11-21 | 2009-12-01 | Macronix Int Co Ltd | Air cell thermal isolation for a memory array formed of a programmable resistive material |
| US20070158632A1 (en) * | 2006-01-09 | 2007-07-12 | Macronix International Co., Ltd. | Method for Fabricating a Pillar-Shaped Phase Change Memory Element |
-
2006
- 2006-06-29 US US11/479,303 patent/US7682979B2/en active Active
-
2007
- 2007-06-08 CN CN2007800247055A patent/CN101485006B/zh not_active Expired - Fee Related
- 2007-06-08 EP EP07784377A patent/EP2036140A1/en not_active Withdrawn
- 2007-06-08 KR KR1020097001397A patent/KR101445402B1/ko active Active
- 2007-06-08 JP JP2009518436A patent/JP5164981B2/ja active Active
- 2007-06-08 WO PCT/US2007/070795 patent/WO2008002760A1/en not_active Ceased
- 2007-06-20 TW TW096122069A patent/TWI443736B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| CN101485006B (zh) | 2011-12-14 |
| US20090130855A1 (en) | 2009-05-21 |
| JP2009543351A (ja) | 2009-12-03 |
| KR101445402B1 (ko) | 2014-09-26 |
| CN101485006A (zh) | 2009-07-15 |
| EP2036140A1 (en) | 2009-03-18 |
| US7682979B2 (en) | 2010-03-23 |
| KR20090034903A (ko) | 2009-04-08 |
| TW200820340A (en) | 2008-05-01 |
| JP5164981B2 (ja) | 2013-03-21 |
| WO2008002760A1 (en) | 2008-01-03 |
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