CN101461044B - 没有残余物的硬掩模修整 - Google Patents
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Abstract
提供一种将特征蚀刻进多晶硅层的方法。硬掩模层提供在该多晶硅层之上。光刻胶掩模形成在该硬掩模层之上。通过该光刻胶掩模蚀刻该硬掩模层以形成图案化硬掩模。通过提供包含氧气和含氟化合物的不含碳修整气体来修整该图案化硬掩模，由该修整气体形成等离子，和并且修整该硬掩模。通过该硬掩模将特征蚀刻进该多晶硅层。
Description
技术领域
本发明涉及半导体器件的成形。更具体地，本发明涉及在半导体器件的成形过程中将特征蚀刻进多晶硅层。
背景技术
在半导体晶片处理过程中，使用公知的图案化和蚀刻工艺将半导体器件的特征限定在晶片中。在这工艺中，光刻胶(PR)材料设置在晶片上并且然后暴露于由中间掩模过滤的光线。该中间掩模通常是玻璃板，其图案化由模板特征几何图案，该图案阻止光线穿过该中间掩模。
通过该中间掩模后，光线接触光刻胶材料的表面。该光线改变该光刻胶材料的化学成分从而显影机可以去除光刻胶材料的一部分。在正光刻胶材料的情况中，去除该暴露的区域，而在负光刻胶材料的情况中，去除未暴露的区域。之后，蚀刻该晶片以从不再受到该光刻胶材料保护的区域去除下层的材料，并由此在该晶片中形成所需要的特征。
发明内容
为了实现前述的以及按照本发明的目的，提供一种在多晶硅层中形成特征的方法。硬掩模层形成在该多晶硅层之上。光刻胶掩模形成在该硬掩模层之上。通过该光刻胶掩模蚀刻该硬掩模层以形成图案化硬掩模。通过提供包含氧气和含氟化合物的不含碳的修整气体修整该图案化硬掩模，由该修整气体形成等离子，并且修整该硬掩模。通过该硬掩模将特征蚀刻进该多晶硅层。
在本发明另一表现形式中，提供用来修整多晶硅层之上的硬掩模的方法。提供包含氧气和含氟化合物的不含碳修整气体。由该修整气体形成等离子。修整该硬掩模。
在本发明另一表现形式中，提供一种用于将特征形成进蚀刻层的装置，该蚀刻层设置在硬掩模层下方，该硬掩模层设置在光刻胶掩模下方。提供等离子处理室，其包括形成等离子处理室外壳的室壁，用于在该等离子处理室外壳内支撑基片的基片支撑件，用于调节该等离子处理室外壳内压力的压力调节器，至少一个电极，用来向该等离子处理室外壳提供功率以维持等离子，气体入口，用于将气体提供进该等离子处理室外壳，和气体出口，用于从该等离子处理室外壳排出气体。与该气体入口流体连通的气体源包括氧气气体源、含氟化合物气体源和多晶硅蚀刻气体源。控制器以可控制地方式连接到该气体源和该至少一个电极。该控制器包括至少一个处理器和计算机可读介质，其包括用于通过该光刻胶掩模蚀刻该硬掩模层以形成图案化硬掩模的计算机可读代码；用于修整该图案化硬掩模的计算机可读代码，其包括用于通过该气体入口从该气体源提供包含氧气和含氟化合物的不含碳修整气体进入该等离子处理室的计算机可读代码，用于从该修整气体形成等离子的计算机可读代码，和用于修整该硬掩模的计算机可读代码；以及用于通过该硬掩模将特征蚀刻进该多晶硅层的计算机可读代码。
本发明的这些和其他特征将在下面的具体描述中结合附图更详细地说明。
附图说明
在附图中，本发明作为示例说明，而不是作为限制，并且在这些图中类似的参考标号指的是相似的零件，其中：
图1是可在本发明一实施例中使用的工艺的高层流程图。
图2A-G按照本发明一实施例处理的栈的示意性剖视图。
图3是可在实施本发明中使用的等离子处理室的示意图。
图4A-B说明一个计算机系统，其适于实现用在本发明实施例中的控制器。
具体实施方式
现在将根据其如在附图中说明的几个实施方式来具体描述本发明。在下面的描述中，阐述许多具体细节以提供对本发明的彻底理解。然而，对于本领域技术人员，显然，本发明可不利用这些具体细节的一些或者全部而实施。在有的情况下，公知的工艺步骤和/或结构没有说明，以避免不必要的混淆本发明。
为了便于理解，图1是可在本发明一实施例中使用的工艺的高层流程图。硬掩模层提供在多晶硅层之上(步骤104)。图2A是基片204之上的多晶硅层208的示意性剖视图，在该多晶硅之上形成硬掩模层212，从而形成栈200。
图案化光刻胶掩模216形成在该硬掩模层212之上(步骤108)。为了提供该图案化掩模，光刻胶层可首先形成在该蚀刻层之上。
修整该图案化光刻胶掩模216(步骤112)，如图2B所示。该修整是局部修整，因为该修整只是将该掩模局部减小到所需要的CD。软BARC层可设置在该光刻胶和硬掩模之间，其变为在该硬掩模打开之前将该PR/BARC修整到的水平。
打开该硬掩模层212形成图案化硬掩模(步骤116)，如图2C所示。剥除该光刻胶掩模216(步骤120)，如图2D所示。
修整由该硬掩模层212形成的该图案化硬掩模(步骤124)，如图2E所示。该硬掩模修整提供硬掩模修整气体，其不含碳并且包括氧气和含氟化合物。优选地，氧气的流率大于该含氟化合物的流率。该硬掩模修整气体形成等离子。该等离子修整该硬掩模并且优选地提供相对多晶硅的无穷大的选择比。可提供突破步骤(步骤128)以完成在该硬掩模层212中形成特征。是否需要突破步骤取决于随后的多晶硅蚀刻的化学制剂。
通过该硬掩模蚀刻该多晶硅层208(步骤132)以形成特征224，如图2F所示。然后可剥除该硬掩模(步骤136)，如图2G所示。是否需要硬掩模剥除取决于具体的门应用。
示例
为了提供示例，硬掩模形成在多晶硅层之上。该硬掩模可以是传统的硅基硬掩模材料，其优选地是SiN、富氮化硅(SiliconRich Nitride)(SRN)、SiO2、TEOS和SiON。更优选地，该硬掩模材料在这个示例中是双SiON/SRN硬掩模。
光刻胶掩模形成在该硬掩模层之上(步骤108)。在这个示例中，底部抗反射涂层(BARC)设置在该光刻胶掩模和硬掩模层之间。在这个示例中，该光刻胶是193nm PR。
然后修整该光刻胶掩模(步骤112)。使用传统的光刻胶修整，如通过提供O2、HBr、Cl2、He、CF4等的任何一个或多个构成的光刻胶修整气体(其形成等离子)。
该基片然后可设置在蚀刻室中。图3是等离子处理系统300的示意图，包括等离子处理工具301。该等离子处理工具301是电感耦合等离子蚀刻工具并且包括其中具有等离子处理室304的等离子反应器302。变压器耦合功率(TCP)控制器350和偏置功率控制器355分别控制TCP电源351和偏置电源356，影响在等离子室304中产生的等离子324。
该TCP功率控制器350设置在用于TCP电源351的设定点，该电源配置为提供13.56MHz的射频信号(由TCP匹配网络352调谐)，至设置在该等离子室304附近的TCP线圈353。提供RF透明窗(transparent window)354以将TCP线圈353与等离子室304分开同时允许能量从TCP线圈353通过至等离子室304。通过蓝宝石圆片提供光学透明窗365，该圆片具有大约2.5cm(1英寸)的直径并位于该RF透明窗354中的孔内。
该偏置功率控制器355设置在用于偏置电源356的设定点，该电源配置为提供RF信号(由偏置匹配网络357调谐)，至位于等离子室304内的卡盘电极308，在电极308上方产生直流(DC)偏置，该电极适于容纳正在处理的基片306，如半导体晶片工件。
气体供应机构或气体源310包括一种或多种气体的一个或多个源316，其通过气体歧管317连接以提供该工艺所需的正确化学制剂至等离子室304内部。排气机构318包括压力控制阀门319和排气泵320并且从该等离子室304内部去除微粒以及维持等离子室304内特定的压力。
温度控制器380通过控制加热器电源384控制提供在该卡盘308内的加热器382的温度。该等离子处理系统300还包括电控电路370。等离子处理系统300还可包括终点探测器360。
图4A和4B说明了一个计算机系统1300，其适于实现用于本发明的实施方式的控制回路的控制器370。图4A示出该计算机系统一种可能的物理形式。当然，该计算机系统可以具有从集成电路、印刷电路板和小型手持设备到巨型超级计算机范围内的许多物理形式。计算机系统1300包括监视器1302、显示器1304、机箱1306、磁盘驱动器1308、键盘1310和鼠标1312。磁盘1314是用来与计算机系统1300传入和传出数据的计算机可读介质。
图4B是计算机系统1300的框图的一个例子。连接到系统总线1320的是各种各样的子系统。处理器1322(也称为中央处理单元，或CPU)连接到存储设备，包括存储器1324。存储器1324包括随机访问存储器(RAM)和只读存储器(ROM)。如本领域所公知的，ROM用作向CPU单向传输数据和指令，而RAM通常用来以双向的方式传输数据和指令。这两种类型的存储器可包括下面描述的任何合适的计算机可读介质。固定磁盘1326也是双向连接到CPU1322；其提供额外的数据存储并且也包括下面描述的任何计算机可读介质。固定磁盘1326可用来存储程序、数据等，并且通常是次级存储介质(如硬盘)，其比主存储器慢。可以理解的是保留在固定磁盘1326内的信息可以在适当的情况下作为虚拟存储器以标准的方式结合在存储器1324中。可移动存储器1314可以采用下面描述的任何计算机可读介质的形式。
CPU 1322还连接到各种输入/输出设备，如显示器1304、键盘1310、鼠标1312和扬声器1330。通常，输入/输出设备可以是下面的任何一种：视频显示器、轨迹球、鼠标、键盘、麦克风、触摸显示器、转换器读卡器、磁带或纸带阅读器、书写板、触针、语音或手写识别器、生物阅读器或其他计算机。CPU 1322可选地可使用网络接口1340连接到另一台计算机或者电信网络。利用这样的网络接口，计划在执行上述方法步骤地过程中，CPU可从网络接收信息或者向网络输出信息。此外，本发明的方法实施方式可在CPU 1322上单独执行或者可在如Internet的网络上与共享该处理一部分的远程CPU一起执行。
另外，本发明的实施方式进一步涉及具有计算机可读介质的计算机存储产品，在计算机可读介质上有用于执行各种计算机实现的操作的计算机代码。该介质和计算机代码可以是那些为本发明目的专门设计和构建的，或者它们可以是对于计算机软件领域技术人员来说公知并且可以得到的类型。计算机可读介质的例子包括，但不限于：磁介质，如硬盘、软盘和磁带；光介质，如CD-ROM和全息设备；磁-光介质，如光软盘；以及为了存储和执行程序代码专门配置的硬件设备，如专用集成电路(ASIC)、可编程逻辑器件(PLD)以及ROM和RAM器件。计算机代码的例子包括如由编译器生成的机器代码，以及包含高级代码的文件，该高级代码能够由计算机使用解释器来执行。计算机可读介质还可以是在载波中由计算机数据信号携带的并且表示能够被处理器执行的指令序列的计算机代码。
然后打开该硬掩模层(步骤116)。可使用传统的硬掩模打开，其提供有下面一种或多种硬掩模打开气体；CF4、CH2F2、CHF3、SF6、O2、Ar、He，N2等。优选地，氟基气体用作最主要的蚀刻剂。
剥除该光刻胶(步骤120)。在这个示例中使用传统灰化，其使用O2作为剥除气体。
修整该硬掩模(步骤124)。该硬掩模修整提供硬掩模修整气体，其没有碳(不包含碳)并且包括氧气和含氟化合物。优选地，氧气流率大于该含氟化合物的流率。更优选地，该含氟化合物是SF6和NF3的至少一个。更优选地，O2流率超过SF6和NF3流率的5倍。更优选地，O2流率超过SF6和NF3流率的9倍。优选地，该修整气体不含碳。在这个示例中，该氟成分是SF6。该硬掩模修整气体形成等离子。该等离子修整该硬掩模并且优选地提供相对多晶硅无穷大的选择比。用于该硬掩模修整的示例制法提供10m Torr压力。通过该TCP线圈353应用1000瓦特。提供200sccm O2和15sccm SF6的修整气体。
在这个实施例中，没有使用突破蚀刻(步骤128)。在其他实施例中，可使用传统的突破蚀刻，可以使用氟基突破气体，如CF4。
蚀刻该多晶硅层(步骤132)。提供使用SF6和CH2F2多晶硅蚀刻气体的传统的多晶硅蚀刻。可在没有突破步骤的情况下进行这种多晶硅蚀刻。对于HBr基的多晶硅蚀刻，突破蚀刻是优选地。
在没有受到理论限制的情况下，相信该创新性的工艺提供硬掩模修整，其使用该修整气体的氧气来在该多晶硅之上提供薄的保护SiO层。该薄的保护层提供相对多晶硅的无穷大的选择比。结果，在该硬掩模修整过程中该多晶硅不会受损或蚀刻，这阻止该修整影响或形成该多晶硅形貌。
另外，通过修整该硬掩模，该光刻胶修整只需要较少。该光刻胶掩模的修整也是垂直的减少该光刻胶的厚度。光刻胶掩模过多的修整导致光刻胶掩模的刻面而使得光刻胶掩模过薄，这导致蚀刻进该多晶硅的特征出现缺陷。为了进一步减少可能由该光刻胶修整导致的损伤，可提供不修整该光刻胶的实施例。
该创新性工艺中不存在碳也减小了线条边缘粗糙度，而没有恶化线条边缘缩短。相信存在碳时会形成残余物，其增加粗糙度。
尽管本发明依照多个实施方式描述，但是存在落入本发明范围内的改变、修改、置换和各种替代等同物。还应当注意，有许多实现本发明方法和设备的可选方式。所以，其意图是下面所附的权利要求解释为包括所有这样的落入本发明主旨和范围内的改变、修改、置换和各种替代等同物。
Claims (7)
1.一种用来在多晶硅层形成特征的方法，包括：
在该多晶硅层之上形成一层硅基硬掩模层；
在该硅基硬掩模层之上形成光刻胶掩模；
修整该光刻胶掩模；
在修整该光刻胶掩模之后，通过该光刻胶掩模蚀刻该硅基硬掩模层以形成图案化硬掩模；
在剥除该光刻胶掩模之后修整该图案化硬掩模，包括：
提供包括氧气和含氟化合物的不含碳修整气体；
由该修整气体形成等离子；和
修整该图案化硬掩模；
其中，对该图案化硬掩膜的修整使用所述修整气体的氧气来在所述多晶硅层上提供薄的保护SiO层，该薄的保护SiO层提供相对多晶硅的无穷大的选择比，和
在修整该图案化硬掩模之后，通过该图案化硬掩模将特征蚀刻进该多晶硅层。
2.如权利要求1所述的方法，其中该修整气体提供大于来自该含氟化合物的氟原子流率的氧原子流率。
3.如权利要求1所述的方法，进一步包括在通过该硬掩模将特征蚀刻进该多晶硅层之后剥除该硬掩模。
4.如权利要求1所述的方法，其中该含氟化合物是SF6，其中氧气流率大于SF6流率的5倍。
5.如权利要求1所述的方法，其中该含氟化合物是NF3，其中氧气流率大于NF3流率的5倍。
6.如权利要求1所述的方法，其中该含氟化合物是SF6和NF3的至少一个，其中氧气流率是该SF6和NF3流率的至少9倍。
7.一种用于在多晶硅层中形成特征的系统，包括：
装置，用于在该多晶硅层之上形成一层硅基硬掩模层；
装置，用于在该硅基硬掩模层之上形成光刻胶掩模；
装置，用于修整该光刻胶掩模；
装置，用于在修整该光刻胶掩模之后，通过该光刻胶掩模蚀刻该硅基硬掩模层以形成图案化硬掩模；
装置，用于在剥除该光刻胶掩模之后修整该图案化硬掩模，包括：
装置，用于提供包括氧气和含氟化合物的不含碳修整气体；
装置，用于由该修整气体形成等离子；和
装置，用于修整该图案化硬掩模；
其中，对该图案化硬掩膜的修整使用所述修整气体的氧气来在所述多晶硅层上提供薄的保护SiO层，该薄的保护SiO层提供相对多晶硅的无穷大的选择比，和
装置，用于在修整该图案化硬掩模之后，通过该图案化硬掩模将特征蚀刻进该多晶硅层。
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| US8124540B2 (en) | 2012-02-28 |
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