JP5164355B2 - 荷電粒子ビームの走査方法及び荷電粒子線装置 - Google Patents

荷電粒子ビームの走査方法及び荷電粒子線装置 Download PDF

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Publication number
JP5164355B2
JP5164355B2 JP2006261651A JP2006261651A JP5164355B2 JP 5164355 B2 JP5164355 B2 JP 5164355B2 JP 2006261651 A JP2006261651 A JP 2006261651A JP 2006261651 A JP2006261651 A JP 2006261651A JP 5164355 B2 JP5164355 B2 JP 5164355B2
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charged particle
particle beam
scanning
reference object
objects
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Japanese (ja)
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JP2008084626A (ja
JP2008084626A5 (https=
Inventor
裕子 笹氣
真 江角
誠 西原
努 川合
利明 矢ノ倉
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2006261651A priority Critical patent/JP5164355B2/ja
Priority to US11/889,057 priority patent/US7935925B2/en
Publication of JP2008084626A publication Critical patent/JP2008084626A/ja
Publication of JP2008084626A5 publication Critical patent/JP2008084626A5/ja
Priority to US13/079,361 priority patent/US8338781B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/282—Determination of microscope properties
    • H01J2237/2826—Calibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/3045—Deflection calibration

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2006261651A 2006-09-27 2006-09-27 荷電粒子ビームの走査方法及び荷電粒子線装置 Active JP5164355B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006261651A JP5164355B2 (ja) 2006-09-27 2006-09-27 荷電粒子ビームの走査方法及び荷電粒子線装置
US11/889,057 US7935925B2 (en) 2006-09-27 2007-08-08 Charged particle beam scanning method and charged particle beam apparatus
US13/079,361 US8338781B2 (en) 2006-09-27 2011-04-04 Charged particle beam scanning method and charged particle beam apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006261651A JP5164355B2 (ja) 2006-09-27 2006-09-27 荷電粒子ビームの走査方法及び荷電粒子線装置

Publications (3)

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JP2008084626A JP2008084626A (ja) 2008-04-10
JP2008084626A5 JP2008084626A5 (https=) 2009-12-03
JP5164355B2 true JP5164355B2 (ja) 2013-03-21

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US (2) US7935925B2 (https=)
JP (1) JP5164355B2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11056310B2 (en) 2017-01-12 2021-07-06 Hitachi High-Tech Corporation Charged-particle beam device

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JP5525528B2 (ja) * 2009-07-27 2014-06-18 株式会社日立ハイテクノロジーズ パターン評価方法、その装置、及び電子線装置
WO2011030508A1 (ja) * 2009-09-11 2011-03-17 株式会社 日立ハイテクノロジーズ 荷電粒子線装置の信号処理方法、及び信号処理装置
DE102009055271A1 (de) * 2009-12-23 2011-06-30 Carl Zeiss NTS GmbH, 73447 Verfahren zur Erzeugung einer Darstellung eines Objekts mittels eines Teilchenstrahls sowie Teilchenstrahlgerät zur Durchführung des Verfahrens
JP5624774B2 (ja) * 2010-02-26 2014-11-12 株式会社日立ハイテクノロジーズ 走査電子顕微鏡の光学条件設定方法、及び走査電子顕微鏡
JP5591617B2 (ja) * 2010-07-29 2014-09-17 株式会社日立ハイテクノロジーズ 荷電粒子線装置および該装置の制御方法
JP2012068051A (ja) * 2010-09-21 2012-04-05 Toshiba Corp パターン欠陥検査装置およびパターン欠陥検査方法
JP5677236B2 (ja) * 2011-08-22 2015-02-25 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP5941704B2 (ja) * 2012-02-28 2016-06-29 株式会社日立ハイテクノロジーズ パターン寸法測定装置、及びコンピュータプログラム
JP6155137B2 (ja) * 2013-08-09 2017-06-28 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡を用いた処理装置及び処理方法
JP2017067443A (ja) * 2013-12-27 2017-04-06 株式会社日立ハイテクノロジーズ パターン測定装置、及びコンピュータープログラム
KR101639581B1 (ko) * 2014-08-13 2016-07-15 한국표준과학연구원 하전입자 현미경의 입자빔 제어 장치 및 방법
EP3016130A1 (en) * 2014-10-28 2016-05-04 Fei Company Composite scan path in a charged particle microscope
US10665421B2 (en) * 2018-10-10 2020-05-26 Applied Materials, Inc. In-situ beam profile metrology
KR102690867B1 (ko) * 2020-02-20 2024-08-05 주식회사 히타치하이테크 패턴 매칭 장치, 패턴 측정 시스템 및 비일시적 컴퓨터 가독 매체
JP7469097B2 (ja) 2020-03-26 2024-04-16 東レエンジニアリング先端半導体Ｍｉテクノロジー株式会社 走査電子顕微鏡および画像生成方法
US20230178330A1 (en) * 2020-05-29 2023-06-08 Hitachi High-Tech Corporation Method for Controlling Position of Sample in Charged Particle Beam Device, Program, Storage Medium, Control Device, and Charged Particle Beam Device
JP7455676B2 (ja) * 2020-06-05 2024-03-26 株式会社日立ハイテク 電子顕微鏡および電子顕微鏡のフォーカス調整方法
JP7041207B2 (ja) * 2020-07-22 2022-03-23 株式会社日立ハイテク 荷電粒子ビーム装置
US11810749B2 (en) * 2021-12-06 2023-11-07 Carl Zeiss Smt Gmbh Charged particle beam system, method of operating a charged particle beam system, method of recording a plurality of images and computer programs for executing the methods
DE102022207930A1 (de) * 2022-08-01 2024-02-01 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Korrigieren von Abbildungsfehlern beim Rastern eines geladenen Teilchenstrahles über eine Probe

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JPH04112443A (ja) * 1990-09-01 1992-04-14 Hitachi Ltd 二次イオン質量分析装置
JPH0513037A (ja) * 1991-07-02 1993-01-22 Fujitsu Ltd 荷電粒子ビーム装置及びその制御方法
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US5757015A (en) * 1995-06-08 1998-05-26 Fujitsu Limited Charged-particle-beam exposure device and charged-particle-beam exposure method
JPH10213556A (ja) * 1997-01-29 1998-08-11 Hitachi Ltd 表面元素分析装置及び分析方法
JPH1130850A (ja) * 1997-07-11 1999-02-02 Nikon Corp 投影露光装置用マスク，投影露光方法および投影露光装置
JPH11160054A (ja) * 1997-12-02 1999-06-18 Jeol Ltd パターン測長方法
US6509564B1 (en) * 1998-04-20 2003-01-21 Hitachi, Ltd. Workpiece holder, semiconductor fabricating apparatus, semiconductor inspecting apparatus, circuit pattern inspecting apparatus, charged particle beam application apparatus, calibrating substrate, workpiece holding method, circuit pattern inspecting method, and charged particle beam application method
JP3463599B2 (ja) * 1998-04-20 2003-11-05 株式会社日立製作所 試料保持機，半導体製造装置，半導体検査装置，回路パターン検査装置，荷電粒子線応用装置，校正用基板，試料の保持方法，回路パターン検査方法、および、荷電粒子線応用方法
JP3666267B2 (ja) * 1998-09-18 2005-06-29 株式会社日立製作所 荷電粒子ビーム走査式自動検査装置
TW546549B (en) * 1998-11-17 2003-08-11 Advantest Corp Electron beam exposure apparatus and exposure method
JP2000260381A (ja) * 1999-03-05 2000-09-22 Sanyuu Denshi Kk 走査型画像の処理装置
JP3494068B2 (ja) * 1999-03-30 2004-02-03 株式会社日立製作所 荷電粒子線装置
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JP2006173038A (ja) * 2004-12-20 2006-06-29 Hitachi High-Technologies Corp 荷電粒子線装置、試料像表示方法及びイメージシフト感度計測方法
TWI290430B (en) * 2005-02-02 2007-11-21 Shimadzu Corp Scanning electron beam device
JP2006108123A (ja) * 2006-01-16 2006-04-20 Hitachi Ltd 荷電粒子線装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11056310B2 (en) 2017-01-12 2021-07-06 Hitachi High-Tech Corporation Charged-particle beam device

Also Published As

Publication number Publication date
US7935925B2 (en) 2011-05-03
US8338781B2 (en) 2012-12-25
JP2008084626A (ja) 2008-04-10
US20080073528A1 (en) 2008-03-27
US20110174975A1 (en) 2011-07-21

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