JP5163045B2 - エピタキシャル成長基板の製造方法及び窒化物系化合物半導体素子の製造方法 - Google Patents
エピタキシャル成長基板の製造方法及び窒化物系化合物半導体素子の製造方法 Download PDFInfo
- Publication number
- JP5163045B2 JP5163045B2 JP2007268305A JP2007268305A JP5163045B2 JP 5163045 B2 JP5163045 B2 JP 5163045B2 JP 2007268305 A JP2007268305 A JP 2007268305A JP 2007268305 A JP2007268305 A JP 2007268305A JP 5163045 B2 JP5163045 B2 JP 5163045B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- compound semiconductor
- nitride
- support substrate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 122
- 239000004065 semiconductor Substances 0.000 title claims description 83
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- -1 nitride compound Chemical class 0.000 title claims description 21
- 150000004767 nitrides Chemical class 0.000 claims description 46
- 150000001875 compounds Chemical class 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 19
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 15
- 229910052733 gallium Inorganic materials 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000012808 vapor phase Substances 0.000 claims description 6
- 239000012071 phase Substances 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 16
- 229910002601 GaN Inorganic materials 0.000 description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 14
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Landscapes
- Recrystallisation Techniques (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007268305A JP5163045B2 (ja) | 2007-10-15 | 2007-10-15 | エピタキシャル成長基板の製造方法及び窒化物系化合物半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007268305A JP5163045B2 (ja) | 2007-10-15 | 2007-10-15 | エピタキシャル成長基板の製造方法及び窒化物系化合物半導体素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009096655A JP2009096655A (ja) | 2009-05-07 |
| JP2009096655A5 JP2009096655A5 (enExample) | 2010-12-02 |
| JP5163045B2 true JP5163045B2 (ja) | 2013-03-13 |
Family
ID=40700005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007268305A Expired - Fee Related JP5163045B2 (ja) | 2007-10-15 | 2007-10-15 | エピタキシャル成長基板の製造方法及び窒化物系化合物半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5163045B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105931948A (zh) * | 2011-08-18 | 2016-09-07 | 富士通株式会社 | 化合物半导体器件及其制造方法 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4996448B2 (ja) * | 2007-12-25 | 2012-08-08 | パナソニック株式会社 | 半導体基板の作成方法 |
| JP5491116B2 (ja) * | 2009-09-25 | 2014-05-14 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板、半導体素子、および半導体素子用エピタキシャル基板の製造方法 |
| EP2362412B1 (en) | 2010-02-19 | 2020-04-08 | Samsung Electronics Co., Ltd. | Method of growing nitride semiconductor |
| JP5059205B2 (ja) | 2011-03-03 | 2012-10-24 | 株式会社東芝 | ウェーハ及び結晶成長方法 |
| KR101773091B1 (ko) * | 2011-05-20 | 2017-08-30 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조 방법 |
| JP6185398B2 (ja) * | 2014-01-31 | 2017-08-23 | 東京エレクトロン株式会社 | 窒化ガリウム系結晶の成長方法及び熱処理装置 |
| JP6556664B2 (ja) * | 2015-07-08 | 2019-08-07 | クアーズテック株式会社 | 窒化物半導体基板 |
| JP6288187B2 (ja) * | 2016-08-22 | 2018-03-07 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| US11515408B2 (en) | 2020-03-02 | 2022-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Rough buffer layer for group III-V devices on silicon |
| KR102591149B1 (ko) * | 2021-12-20 | 2023-10-19 | 웨이브로드 주식회사 | 비발광 3족 질화물 반도체 적층체를 제조하는 방법 |
| CN113540295B (zh) * | 2021-06-23 | 2023-07-21 | 山西中科潞安紫外光电科技有限公司 | 一种氮化铝衬底模板的制作方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5393993A (en) * | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
| JP2001122693A (ja) * | 1999-10-22 | 2001-05-08 | Nec Corp | 結晶成長用下地基板およびこれを用いた基板の製造方法 |
| JP2007246289A (ja) * | 2004-03-11 | 2007-09-27 | Nec Corp | 窒化ガリウム系半導体基板の作製方法 |
-
2007
- 2007-10-15 JP JP2007268305A patent/JP5163045B2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105931948A (zh) * | 2011-08-18 | 2016-09-07 | 富士通株式会社 | 化合物半导体器件及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009096655A (ja) | 2009-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5163045B2 (ja) | エピタキシャル成長基板の製造方法及び窒化物系化合物半導体素子の製造方法 | |
| JP5554826B2 (ja) | エピタキシャル基板およびエピタキシャル基板の製造方法 | |
| JP5552923B2 (ja) | 半導体装置およびその製造方法 | |
| US8803189B2 (en) | III-V compound semiconductor epitaxy using lateral overgrowth | |
| US8772831B2 (en) | III-nitride growth method on silicon substrate | |
| JP4332720B2 (ja) | 半導体素子形成用板状基体の製造方法 | |
| US20130140525A1 (en) | Gallium nitride growth method on silicon substrate | |
| JP5668339B2 (ja) | 半導体装置の製造方法 | |
| US20150028457A1 (en) | Epitaxial substrate, semiconductor device, and method for manufacturing semiconductor device | |
| JP2005217049A (ja) | 半導体装置 | |
| JP2006100501A (ja) | 半導体素子の形成に使用するための板状基体及びその製造方法 | |
| JP2010232293A (ja) | 半導体装置 | |
| US8643059B2 (en) | Substrate structure and method of manufacturing the same | |
| KR20150012119A (ko) | 질화물 반도체 소자 및 그 제조 방법 | |
| KR20190078654A (ko) | 질화물 반도체 기판과 그 제조방법 및 반도체 디바이스 | |
| JP2016171196A (ja) | 半導体装置の製造方法 | |
| JP5412093B2 (ja) | 半導体ウェハ製造方法及び半導体装置製造方法 | |
| JP4725763B2 (ja) | 半導体素子形成用板状基体の製造方法 | |
| CN102790155B (zh) | 氮化物半导体器件和晶片以及制造氮化物半导体层的方法 | |
| US8541771B2 (en) | Semiconductor device and method of manufacturing the same | |
| KR20150000753A (ko) | 질화물 반도체 소자 및 그 제조 방법 | |
| KR20140139890A (ko) | 질화물 반도체 소자 및 그 제조 방법 | |
| JP2015070252A (ja) | 半導体装置、半導体装置の製造方法及びウェハ | |
| JP2016058539A (ja) | 高電子移動度トランジスタの製造方法 | |
| CN113224154B (zh) | 高电子迁移率晶体管及其制作方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100915 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100917 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101014 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111117 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111122 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120120 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120522 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120717 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121120 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121203 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151228 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5163045 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |