JP5157783B2 - 電気光学装置及び電子機器 - Google Patents

電気光学装置及び電子機器 Download PDF

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Publication number
JP5157783B2
JP5157783B2 JP2008246386A JP2008246386A JP5157783B2 JP 5157783 B2 JP5157783 B2 JP 5157783B2 JP 2008246386 A JP2008246386 A JP 2008246386A JP 2008246386 A JP2008246386 A JP 2008246386A JP 5157783 B2 JP5157783 B2 JP 5157783B2
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Japan
Prior art keywords
region
electro
semiconductor layer
optical device
light
Prior art date
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Expired - Fee Related
Application number
JP2008246386A
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English (en)
Japanese (ja)
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JP2010078840A5 (enExample
JP2010078840A (ja
Inventor
雅嗣 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
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Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2008246386A priority Critical patent/JP5157783B2/ja
Priority to US12/566,361 priority patent/US8129807B2/en
Publication of JP2010078840A publication Critical patent/JP2010078840A/ja
Publication of JP2010078840A5 publication Critical patent/JP2010078840A5/ja
Application granted granted Critical
Publication of JP5157783B2 publication Critical patent/JP5157783B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2008246386A 2008-09-25 2008-09-25 電気光学装置及び電子機器 Expired - Fee Related JP5157783B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008246386A JP5157783B2 (ja) 2008-09-25 2008-09-25 電気光学装置及び電子機器
US12/566,361 US8129807B2 (en) 2008-09-25 2009-09-24 Electro-optical device and electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008246386A JP5157783B2 (ja) 2008-09-25 2008-09-25 電気光学装置及び電子機器

Publications (3)

Publication Number Publication Date
JP2010078840A JP2010078840A (ja) 2010-04-08
JP2010078840A5 JP2010078840A5 (enExample) 2011-10-06
JP5157783B2 true JP5157783B2 (ja) 2013-03-06

Family

ID=42036732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008246386A Expired - Fee Related JP5157783B2 (ja) 2008-09-25 2008-09-25 電気光学装置及び電子機器

Country Status (2)

Country Link
US (1) US8129807B2 (enExample)
JP (1) JP5157783B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101252001B1 (ko) * 2006-06-15 2013-04-08 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
JP5911767B2 (ja) * 2012-07-13 2016-04-27 株式会社東芝 固体撮像装置
JP2015195327A (ja) * 2013-06-05 2015-11-05 株式会社半導体エネルギー研究所 半導体装置
JP6433169B2 (ja) * 2014-06-23 2018-12-05 株式会社ジャパンディスプレイ 薄膜半導体装置
TWI578509B (zh) * 2015-07-23 2017-04-11 友達光電股份有限公司 畫素結構
CN105140294A (zh) * 2015-08-11 2015-12-09 武汉华星光电技术有限公司 低温多晶硅薄膜晶体管及其制造方法
JP6597768B2 (ja) * 2017-12-27 2019-10-30 セイコーエプソン株式会社 電気光学装置および電子機器
JP6714879B2 (ja) * 2018-08-31 2020-07-01 セイコーエプソン株式会社 電気光学装置、電子機器
JP7409115B2 (ja) * 2020-01-30 2024-01-09 セイコーエプソン株式会社 電気光学装置、および電子機器
JP7505352B2 (ja) * 2020-09-29 2024-06-25 セイコーエプソン株式会社 電気光学装置、および電子機器
JP7484632B2 (ja) 2020-09-30 2024-05-16 セイコーエプソン株式会社 電気光学装置、および電子機器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4019461B2 (ja) * 1996-09-06 2007-12-12 セイコーエプソン株式会社 カラー表示装置とその製造方法およびカラー液晶装置
JP3680848B2 (ja) * 1998-03-19 2005-08-10 セイコーエプソン株式会社 薄膜トランジスタを用いた基板、液晶装置、及び電子機器
JP3731447B2 (ja) 2000-06-15 2006-01-05 セイコーエプソン株式会社 電気光学装置及びその製造方法
JP2002196362A (ja) * 2000-12-25 2002-07-12 Sharp Corp 液晶表示装置およびその製造方法
JP2003197917A (ja) * 2001-12-26 2003-07-11 Sharp Corp 半導体装置及びその製造方法
JP3870897B2 (ja) 2002-01-07 2007-01-24 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2004004722A (ja) 2002-04-25 2004-01-08 Seiko Epson Corp 電気光学装置及び電子機器
JP3873814B2 (ja) * 2002-05-21 2007-01-31 セイコーエプソン株式会社 電気光学装置及び電子機器
KR101252001B1 (ko) * 2006-06-15 2013-04-08 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
JP2008191517A (ja) * 2007-02-07 2008-08-21 Seiko Epson Corp 電気光学装置用基板及び電気光学装置、並びに電子機器

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Publication number Publication date
US8129807B2 (en) 2012-03-06
JP2010078840A (ja) 2010-04-08
US20100072503A1 (en) 2010-03-25

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