JP5154831B2 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP5154831B2
JP5154831B2 JP2007118765A JP2007118765A JP5154831B2 JP 5154831 B2 JP5154831 B2 JP 5154831B2 JP 2007118765 A JP2007118765 A JP 2007118765A JP 2007118765 A JP2007118765 A JP 2007118765A JP 5154831 B2 JP5154831 B2 JP 5154831B2
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JP
Japan
Prior art keywords
layer
display device
sub
drain electrode
source electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007118765A
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English (en)
Japanese (ja)
Other versions
JP2007300116A (ja
JP2007300116A5 (enExample
Inventor
承 奐 趙
容 旭 李
敏 鎬 尹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2007300116A publication Critical patent/JP2007300116A/ja
Publication of JP2007300116A5 publication Critical patent/JP2007300116A5/ja
Application granted granted Critical
Publication of JP5154831B2 publication Critical patent/JP5154831B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2007118765A 2006-04-28 2007-04-27 表示装置 Expired - Fee Related JP5154831B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2006-0038915 2006-04-28
KR1020060038915A KR101240657B1 (ko) 2006-04-28 2006-04-28 표시장치와 그 제조방법

Publications (3)

Publication Number Publication Date
JP2007300116A JP2007300116A (ja) 2007-11-15
JP2007300116A5 JP2007300116A5 (enExample) 2010-06-17
JP5154831B2 true JP5154831B2 (ja) 2013-02-27

Family

ID=38648822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007118765A Expired - Fee Related JP5154831B2 (ja) 2006-04-28 2007-04-27 表示装置

Country Status (3)

Country Link
US (1) US7692188B2 (enExample)
JP (1) JP5154831B2 (enExample)
KR (1) KR101240657B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2817361B1 (fr) * 2000-11-28 2003-01-24 St Microelectronics Sa Generateur de signal aleatoire
US20090014716A1 (en) * 2007-07-11 2009-01-15 Takumi Yamaga Organic thin-film transistor and method of manufacturing the same
US20090098680A1 (en) * 2007-10-15 2009-04-16 E.I. Du Pont De Nemours And Company Backplane structures for solution processed electronic devices
JP5003426B2 (ja) 2007-11-20 2012-08-15 富士電機機器制御株式会社 熱動形過負荷継電器
WO2009079327A1 (en) 2007-12-14 2009-06-25 E. I. Du Pont De Nemours And Company Backplane structures for electronic devices
EP2244302B1 (en) 2008-02-12 2016-05-18 Konica Minolta Holdings, Inc. Method for forming an organic semiconductor layer and method for manufacturing an organic thin film transistor
JP5509629B2 (ja) * 2009-03-09 2014-06-04 コニカミノルタ株式会社 薄膜トランジスタアレイの製造方法、及び薄膜トランジスタアレイ
JP5742099B2 (ja) * 2010-02-19 2015-07-01 セイコーエプソン株式会社 半導体装置、半導体装置の製造方法、及び電子機器
WO2011128932A1 (ja) * 2010-04-13 2011-10-20 パナソニック株式会社 有機半導体装置及び有機半導体装置の製造方法
WO2013046547A1 (ja) 2011-09-26 2013-04-04 パナソニック株式会社 有機薄膜トランジスタ
KR102183920B1 (ko) * 2013-12-16 2020-11-30 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN104332490A (zh) * 2014-10-27 2015-02-04 重庆京东方光电科技有限公司 一种薄膜晶体管
JP7638536B2 (ja) 2020-02-26 2025-03-04 国立大学法人 東京大学 半導体装置及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04162477A (ja) * 1990-10-24 1992-06-05 Sony Corp 薄膜トランジスタ
JP3730394B2 (ja) * 1997-03-18 2006-01-05 株式会社東芝 高耐圧半導体装置
JP2000269504A (ja) * 1999-03-16 2000-09-29 Hitachi Ltd 半導体装置、その製造方法及び液晶表示装置
JP4231248B2 (ja) 2002-06-27 2009-02-25 日本放送協会 有機トランジスタ及びその製造方法
JP4545373B2 (ja) 2002-11-07 2010-09-15 旭化成株式会社 有機半導体薄膜及びその製造方法
KR100973811B1 (ko) * 2003-08-28 2010-08-03 삼성전자주식회사 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법
JP4148085B2 (ja) 2003-09-26 2008-09-10 セイコーエプソン株式会社 電気光学装置の製造方法、電気光学装置の製造方法で製造された電気光学装置、電気光学装置を搭載した電子機器。
KR101058458B1 (ko) * 2004-09-22 2011-08-24 엘지디스플레이 주식회사 저분자 유기 반도체물질을 이용한 액정표시장치용 어레이기판 및 그의 제조 방법
KR101090250B1 (ko) * 2004-10-15 2011-12-06 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
JP4989907B2 (ja) * 2005-03-24 2012-08-01 株式会社半導体エネルギー研究所 半導体装置及び電子機器

Also Published As

Publication number Publication date
KR20070106259A (ko) 2007-11-01
JP2007300116A (ja) 2007-11-15
KR101240657B1 (ko) 2013-03-08
US20070254429A1 (en) 2007-11-01
US7692188B2 (en) 2010-04-06

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