KR101240657B1 - 표시장치와 그 제조방법 - Google Patents

표시장치와 그 제조방법 Download PDF

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Publication number
KR101240657B1
KR101240657B1 KR1020060038915A KR20060038915A KR101240657B1 KR 101240657 B1 KR101240657 B1 KR 101240657B1 KR 1020060038915 A KR1020060038915 A KR 1020060038915A KR 20060038915 A KR20060038915 A KR 20060038915A KR 101240657 B1 KR101240657 B1 KR 101240657B1
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South Korea
Prior art keywords
layer
ink
drain electrode
channel region
sub
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Expired - Fee Related
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KR1020060038915A
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English (en)
Korean (ko)
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KR20070106259A (ko
Inventor
조승환
이용욱
윤민호
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삼성디스플레이 주식회사
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Application filed by 삼성디스플레이 주식회사 filed Critical 삼성디스플레이 주식회사
Priority to KR1020060038915A priority Critical patent/KR101240657B1/ko
Priority to US11/739,804 priority patent/US7692188B2/en
Priority to JP2007118765A priority patent/JP5154831B2/ja
Publication of KR20070106259A publication Critical patent/KR20070106259A/ko
Application granted granted Critical
Publication of KR101240657B1 publication Critical patent/KR101240657B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1020060038915A 2006-04-28 2006-04-28 표시장치와 그 제조방법 Expired - Fee Related KR101240657B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020060038915A KR101240657B1 (ko) 2006-04-28 2006-04-28 표시장치와 그 제조방법
US11/739,804 US7692188B2 (en) 2006-04-28 2007-04-25 Display device and manufacturing method thereof
JP2007118765A JP5154831B2 (ja) 2006-04-28 2007-04-27 表示装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060038915A KR101240657B1 (ko) 2006-04-28 2006-04-28 표시장치와 그 제조방법

Publications (2)

Publication Number Publication Date
KR20070106259A KR20070106259A (ko) 2007-11-01
KR101240657B1 true KR101240657B1 (ko) 2013-03-08

Family

ID=38648822

Family Applications (1)

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KR1020060038915A Expired - Fee Related KR101240657B1 (ko) 2006-04-28 2006-04-28 표시장치와 그 제조방법

Country Status (3)

Country Link
US (1) US7692188B2 (enExample)
JP (1) JP5154831B2 (enExample)
KR (1) KR101240657B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2817361B1 (fr) * 2000-11-28 2003-01-24 St Microelectronics Sa Generateur de signal aleatoire
US20090014716A1 (en) * 2007-07-11 2009-01-15 Takumi Yamaga Organic thin-film transistor and method of manufacturing the same
US20090098680A1 (en) * 2007-10-15 2009-04-16 E.I. Du Pont De Nemours And Company Backplane structures for solution processed electronic devices
JP5003426B2 (ja) 2007-11-20 2012-08-15 富士電機機器制御株式会社 熱動形過負荷継電器
WO2009079327A1 (en) 2007-12-14 2009-06-25 E. I. Du Pont De Nemours And Company Backplane structures for electronic devices
EP2244302B1 (en) 2008-02-12 2016-05-18 Konica Minolta Holdings, Inc. Method for forming an organic semiconductor layer and method for manufacturing an organic thin film transistor
JP5509629B2 (ja) * 2009-03-09 2014-06-04 コニカミノルタ株式会社 薄膜トランジスタアレイの製造方法、及び薄膜トランジスタアレイ
JP5742099B2 (ja) * 2010-02-19 2015-07-01 セイコーエプソン株式会社 半導体装置、半導体装置の製造方法、及び電子機器
WO2011128932A1 (ja) * 2010-04-13 2011-10-20 パナソニック株式会社 有機半導体装置及び有機半導体装置の製造方法
WO2013046547A1 (ja) 2011-09-26 2013-04-04 パナソニック株式会社 有機薄膜トランジスタ
KR102183920B1 (ko) * 2013-12-16 2020-11-30 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN104332490A (zh) * 2014-10-27 2015-02-04 重庆京东方光电科技有限公司 一种薄膜晶体管
JP7638536B2 (ja) 2020-02-26 2025-03-04 国立大学法人 東京大学 半導体装置及びその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050023012A (ko) * 2003-08-28 2005-03-09 삼성전자주식회사 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법
KR20060027137A (ko) * 2004-09-22 2006-03-27 엘지.필립스 엘시디 주식회사 저분자 유기 반도체물질을 이용한 액정표시장치용 어레이기판 및 그의 제조 방법
KR20060033481A (ko) * 2004-10-15 2006-04-19 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
KR20060103241A (ko) * 2005-03-24 2006-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04162477A (ja) * 1990-10-24 1992-06-05 Sony Corp 薄膜トランジスタ
JP3730394B2 (ja) * 1997-03-18 2006-01-05 株式会社東芝 高耐圧半導体装置
JP2000269504A (ja) * 1999-03-16 2000-09-29 Hitachi Ltd 半導体装置、その製造方法及び液晶表示装置
JP4231248B2 (ja) 2002-06-27 2009-02-25 日本放送協会 有機トランジスタ及びその製造方法
JP4545373B2 (ja) 2002-11-07 2010-09-15 旭化成株式会社 有機半導体薄膜及びその製造方法
JP4148085B2 (ja) 2003-09-26 2008-09-10 セイコーエプソン株式会社 電気光学装置の製造方法、電気光学装置の製造方法で製造された電気光学装置、電気光学装置を搭載した電子機器。

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050023012A (ko) * 2003-08-28 2005-03-09 삼성전자주식회사 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법
KR20060027137A (ko) * 2004-09-22 2006-03-27 엘지.필립스 엘시디 주식회사 저분자 유기 반도체물질을 이용한 액정표시장치용 어레이기판 및 그의 제조 방법
KR20060033481A (ko) * 2004-10-15 2006-04-19 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
KR20060103241A (ko) * 2005-03-24 2006-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법

Also Published As

Publication number Publication date
JP5154831B2 (ja) 2013-02-27
KR20070106259A (ko) 2007-11-01
JP2007300116A (ja) 2007-11-15
US20070254429A1 (en) 2007-11-01
US7692188B2 (en) 2010-04-06

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