JP5138637B2 - 半導体プロセス装置用の耐腐食性アルミニウム物品 - Google Patents
半導体プロセス装置用の耐腐食性アルミニウム物品 Download PDFInfo
- Publication number
- JP5138637B2 JP5138637B2 JP2009128191A JP2009128191A JP5138637B2 JP 5138637 B2 JP5138637 B2 JP 5138637B2 JP 2009128191 A JP2009128191 A JP 2009128191A JP 2009128191 A JP2009128191 A JP 2009128191A JP 5138637 B2 JP5138637 B2 JP 5138637B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- article
- layer
- magnesium
- halogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims description 182
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 180
- 238000000034 method Methods 0.000 title claims description 82
- 230000008569 process Effects 0.000 title claims description 58
- 239000004065 semiconductor Substances 0.000 title claims description 48
- 238000005260 corrosion Methods 0.000 title claims description 34
- 230000007797 corrosion Effects 0.000 title claims description 34
- 239000011777 magnesium Substances 0.000 claims description 159
- 229910052749 magnesium Inorganic materials 0.000 claims description 151
- 239000010410 layer Substances 0.000 claims description 132
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 87
- -1 magnesium halide compound Chemical class 0.000 claims description 69
- 239000012535 impurity Substances 0.000 claims description 66
- 229910052736 halogen Inorganic materials 0.000 claims description 43
- 150000002367 halogens Chemical class 0.000 claims description 43
- 239000011737 fluorine Substances 0.000 claims description 32
- 229910052731 fluorine Inorganic materials 0.000 claims description 32
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 29
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 29
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 24
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 24
- 239000011241 protective layer Substances 0.000 claims description 24
- 125000004429 atom Chemical group 0.000 claims description 23
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 229910052742 iron Inorganic materials 0.000 claims description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 239000011701 zinc Substances 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 229910052723 transition metal Inorganic materials 0.000 claims description 7
- 150000003624 transition metals Chemical class 0.000 claims description 7
- 230000035515 penetration Effects 0.000 claims description 6
- 125000005843 halogen group Chemical group 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 4
- 239000012528 membrane Substances 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 27
- 239000011248 coating agent Substances 0.000 description 18
- 238000000576 coating method Methods 0.000 description 18
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 12
- 239000002585 base Substances 0.000 description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 9
- 239000000460 chlorine Substances 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 8
- 229910052801 chlorine Inorganic materials 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 8
- 229910000861 Mg alloy Inorganic materials 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 6
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 6
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 6
- 238000002048 anodisation reaction Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000007743 anodising Methods 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910016569 AlF 3 Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- 238000007872 degassing Methods 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 239000013626 chemical specie Substances 0.000 description 2
- 150000001805 chlorine compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 230000000254 damaging effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000368 destabilizing effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- HZEBHPIOVYHPMT-UHFFFAOYSA-N polonium atom Chemical compound [Po] HZEBHPIOVYHPMT-UHFFFAOYSA-N 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12729—Group IIA metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
- Y10T428/24967—Absolute thicknesses specified
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Description
図1は、化学的気相堆積(CVD)またはエッチング等の半導体基板製作プロセスのために使用される、従来のリアクター・チャンバー100を示す。このようなプロセスは、典型的には、該チャンバー内の構成要素(components)を腐食性のハロゲン含有化学種に晒す。特に腐食性のものは、チャンバー構成要素をプラズマ・クリーニングするために用いられるガス混合物、例えば、CF4 とN2Oとの混合物、またはC2 F6 とO2 との混合物である。チャンバー構成要素は、CVDまたはエッチング・プロセスにおける高温(典型的には200℃〜500℃)と、定期的な(periodic)チャンバー・クリーニングにおける腐食性のハロゲンガス混合物とに、交互に晒される。
アルミニウム物品を陽極処理することの更なる長所は、Al2 O3 およびAlNが酸素に対して非透過性だということである。酸素の浸透を防止することは、該アルミニウムの表面拡散するマグネシウムが所望のハロゲン化マグネシウムよりはむしろ酸化マグネシウムを形成することを防止するために有利である。Al2 O3 およびAlNは、チャンバー中で作られる半導体を汚染する可能性のあるマグネシウムおよび他の不純物の、半導体プロセス・チャンバー中への脱ガスを抑制する。
Claims (41)
- ハロゲン含有化学種(halogen−containing species)による腐食(corrosion)に対してアルミニウム表面を保護するための表面を有する、半導体プロセスにおいて有用な製品(article of manufacture)であって、
a)ゼロないし1.5重量%の範囲内のマグネシウム濃度を有し、且つ、合計で0.2重量%以下(no greater than)のマグネシウム以外の不純物濃度を有するアルミニウムからなる本体(body)と;
b)該アルミニウムからなる本体の上(overlying)で物品の表面の下(beneath)のハロゲン化マグネシウム化合物からなる層、該ハロゲン化マグネシウム化合物からなる層は、物品の表面から本体内へのハロゲン原子の浸透(penetration)を抑制するように少なくとも0.0025ミクロンの厚さで、且つ連続的(continuous)であり;
c)ハロゲン化マグネシウム化合物からなる層の上の、酸化アルミニウムまたは窒化アルミニウムの層;とからなることを特徴とする製品。 - 前記ハロゲン化マグネシウム層が、弗化マグネシウムからなる請求項1記載の製品。
- ハロゲン含有化学種による腐食に対してアルミニウム表面を保護するための表面を有する、半導体プロセスにおいて有用な製品であって、
a)0.1重量%〜1.5重量%の範囲内のマグネシウム濃度を有し、且つ、合計で0.2重量%以下のマグネシウム以外の不純物濃度を有するアルミニウムからなる外部領域(exterior region)を有するアルミニウム本体(body)と;
b)前記アルミニウムからなる外部領域の部分の上(upon)、または下(underlying)のハロゲン化マグネシウム保護層と;
c)前記アルミニウム本体の外部領域の上にハロゲン化マグネシウム保護層が存在するとき、
前記ハロゲン化マグネシウム保護層の上の、酸化アルミニウムまたは窒化アルミニウムの層で、
前記アルミニウム本体の外部領域の下にハロゲン化マグネシウム保護層が存在するとき、前記アルミニウム本体のアルミニウムからなる外部領域の上の、酸化アルミニウムまたは窒化アルミニウムの層である;とからなることを特徴とする製品。 - 前記外部領域が、アルミニウム本体の表面全体を包囲(encompass)している請求項3記載の製品。
- 前記ハロゲン化マグネシウム層が、弗化マグネシウムからなる請求項3記載の製品。
- ハロゲン含有化学種による腐食に対してアルミニウム表面を保護するための部分を少なくとも一部に有する外部表面(exterior surface)を有する、半導体プロセスにおいて有用なアルミニウム製の(aluminum−comprising)物品であって;
ハロゲン含有化学種による腐食に対してアルミニウム表面を保護するための前記外部表面の部分の上(upon)、または下(underlying)のハロゲン化マグネシウム保護層であって、該ハロゲン化マグネシウム層が少なくとも0.0025ミクロンの厚さを有し;
前記ハロゲン化マグネシウム層に直ちに隣接する(immediately adjacent)前記アルミニウム製の物品が、0.2重量%未満の可動性(mobile)不純物原子の濃度を示すことを特徴とする該アルミニウム製の物品。 - 前記ハロゲン化マグネシウム層が、厚さ0.0025ミクロンないし2ミクロンの範囲にある請求項6記載のアルミニウム製の物品。
- 前記物品の外部表面の全体が、前記腐食に対してアルミニウム表面を保護する請求項6記載のアルミニウム製の物品。
- 前記物品の外部表面の腐食に対してアルミニウム表面を保護するための部分が、前記ハロゲン化マグネシウム保護層上を覆う(overlies)酸化アルミニウムまたは窒化アルミニウムからなる膜を含む請求項6記載のアルミニウム製の物品。
- 前記膜が前記物品の前記外部表面の全体の上を覆う(overlies)請求項9記載のアルミニウム製の物品。
- 前記アルミニウム製の物品中のマグネシウム含有量が、ゼロないし1.5重量%の範囲である請求項6記載のアルミニウム製の物品。
- 前記アルミニウム製の物品中のマグネシウム含有量が、ゼロないし1.5重量%の範囲である請求項6または9に記載のアルミニウム製の物品。
- 前記マグネシウム含有量が、0.3重量%〜1.2重量%の範囲である請求項6または9に記載のアルミニウム製の物品。
- 前記マグネシウム含有量が、0.3重量%〜0.8重量%の範囲である請求項6または9に記載のアルミニウム製の物品。
- 前記アルミニウム製の物品中に存在する前記可動性不純物原子は、シリコン、鉄、銅、クロム、および亜鉛からなる群から選ばれ、前記物品中の前記可動性不純物原子の含有量は0.2重量%未満である請求項6記載のアルミニウム製の物品。
- 前記可動性不純物原子が、遷移金属、半導体、および半導体化合物を形成可能な原子を含むように拡張される(expanded)請求項15記載のアルミニウム製の物品。
- 前記アルミニウム製の物品中に存在する前記可動性不純物原子は、シリコン、鉄、銅、クロム、および亜鉛からなる群から選ばれ、前記物品中の前記可動性不純物原子の含有量は0.2重量%未満である請求項11記載のアルミニウム製の物品。
- 前記可動性不純物原子が、遷移金属、半導体、および半導体化合物を形成可能な原子を含むように拡張される(expanded)請求項17記載のアルミニウム製の物品。
- 前記アルミニウム製の物品中に存在する前記可動性不純物原子は、シリコン、鉄、銅、クロム、および亜鉛からなる群から選ばれ、前記物品中の前記可動性不純物原子の含有量は0.2重量%未満である請求項12記載のアルミニウム製の物品。
- 前記可動性不純物原子が、遷移金属、半導体、および半導体化合物を形成可能な原子を含むように拡張される(expanded)請求項19記載のアルミニウム製の物品。
- 前記ハロゲン化マグネシウムが、弗化マグネシウムである請求項6記載のアルミニウム製の物品。
- 前記ハロゲン化マグネシウムが、弗化マグネシウムである請求項19記載のアルミニウム製の物品。
- 前記ハロゲン化マグネシウムが、弗化マグネシウムである請求項9,11,12,17,18,20のいずれか一項に記載のアルミニウム製の物品。
- ハロゲン含有化学種による腐食に対してアルミニウム表面を保護するための部分を少なくとも一部に有する外部表面(exterior surface)を有する、半導体プロセスにおいて有用なアルミニウム製の(aluminum−comprising)物品を製作する方法であって、
a)マグネシウムを0.1重量%〜1.5重量%の範囲の濃度で含み、且つ、シリコン、鉄、銅、クロム、および亜鉛からなる群から選ばれた可動性不純物原子を0.2重量%未満含有するアルミニウム製の物品を用意(providing)し;
b)少なくとも、耐腐食性とすべき前記アルミニウム製物品の外部表面の部分を、厚さが少なくとも0.0025ミクロンのハロゲン化マグネシウム層の形成を許容するのに充分な時間の間および充分な温度においてハロゲン含有化学種と接触させる;ことを特徴とする方法。 - 前記ハロゲン含有化学種が、弗素を含有する請求項24記載の方法。
- c)少なくとも、耐腐食性とすべき前記アルミニウム製物品の外部表面の前記部分の上に(over)、酸化アルミニウムまたは窒化アルミニウムの層を設ける(applying)ステップを更に含む請求項24記載の方法。
- c)少なくとも、耐腐食性とすべき前記アルミニウム製物品の外部表面の前記部分の上に(over)、酸化アルミニウムまたは窒化アルミニウムの層を設ける(applying)ステップを更に含む請求項25記載の方法。
- 前記可動性不純物原子が、遷移金属、半導体、および半導体化合物を形成可能な原子を含むように拡張される(expanded)請求項24記載の方法。
- 前記ハロゲン含有化学種が、弗素を含有する請求項28記載の方法。
- c)少なくとも、耐腐食性とすべき前記アルミニウム製物品の外部表面の前記部分の上に(over)、酸化アルミニウムまたは窒化アルミニウムの層を設ける(applying)ステップを更に含む請求項28記載の方法。
- c)少なくとも、耐腐食性とすべき前記アルミニウム製物品の外部表面の前記部分の上に(over)、酸化アルミニウムまたは窒化アルミニウムの層を設ける(applying)ステップを更に含む請求項29記載の方法。
- ハロゲン含有化学種による腐食に対してアルミニウム表面を保護するための部分を少なくとも一部に有する外部表面(exterior surface)を有する、半導体プロセスにおいて有用なアルミニウム製の(aluminum−comprising)物品を製作する方法であって、
a)マグネシウムを0.1重量%〜1.5重量%の範囲の濃度で含み、且つ、シリコン、鉄、銅、クロム、および亜鉛からなる群から選ばれた可動性不純物原子を0.2重量%未満含有するアルミニウム製の物品を用意(providing)し;
b)少なくとも、耐腐食性とすべき前記アルミニウム製物品の外部表面の前記部分の上に(over)、酸化アルミニウムまたは窒化アルミニウムの層を設け(applying);
c)少なくとも、耐腐食性とすべき前記アルミニウム製物品の外部表面の前記部分を、前記酸化アルミニウムまたは窒化アルミニウムの層と前記アルミニウム製物品の表面との間に厚さが少なくとも0.0025ミクロンのハロゲン化マグネシウム層の形成を許容するのに充分な時間の間および充分な温度においてハロゲン含有化学種と接触させる;ことを特徴とする方法。 - 前記可動性不純物原子が、遷移金属、半導体、および半導体化合物を形成可能な原子を含むように拡張される(expanded)請求項32記載の方法。
- 前記ハロゲン含有化学種が、弗素を含有する請求項33記載の方法。
- ハロゲン含有化学種による腐食に対してアルミニウム表面を保護するための部分を少なくとも一部に有する外部表面(exterior surface)を有する、半導体プロセスにおいて有用なアルミニウム製の(aluminum−comprising)物品を製作する方法であって、
a)マグネシウムを0.1重量%〜1.5重量%の範囲の濃度で含み、且つ、シリコン、鉄、銅、クロム、および亜鉛からなる群から選ばれた可動性不純物原子を0.2重量%未満含有するアルミニウム製の物品を用意(providing)し;
b)少なくとも、耐腐食性とすべき前記アルミニウム製物品の外部表面の前記部分の上に(on)ハロゲン化マグネシウムの保護上層(overlying layer)を形成し、該ハロゲン化マグネシウム層は少なくとも0.0025ミクロンの厚さを有する;ことを特徴とする方法。 - 前記ハロゲン化マグネシウムの上層が、a)少なくとも、ハロゲン含有化学種による腐食に対してアルミニウム表面を保護すべき前記外部表面の部分の上に(upon)、物理的気相堆積およびイオン注入からなる群から選ばれる手法を用いて、マグネシウムの層を堆積し;
b)前記マグネシウム層を、厚さが少なくとも0.0025ミクロンのハロゲン化マグネシウム層の形成を許容するのに充分な時間の間および充分な温度においてハロゲン含有化学種と接触させる;ことにより形成される請求項35記載の方法。 - 前記ハロゲン含有化学種が、弗素を含有する請求項36記載の方法。
- c)少なくとも、耐腐食性とすべき前記アルミニウム製物品の外部表面の前記部分の上に(over)、酸化アルミニウムまたは窒化アルミニウムの層を設ける(applying)ステップを更に含む請求項36記載の方法。
- c)少なくとも、耐腐食性とすべき前記アルミニウム製物品の外部表面の前記部分の上に(over)、酸化アルミニウムまたは窒化アルミニウムの層を設ける(applying)ステップを更に含む請求項37記載の方法。
- 前記可動性不純物原子が、遷移金属、半導体、および半導体化合物を形成可能な原子を含むように拡張される(expanded)請求項35記載の方法。
- c)少なくとも、耐腐食性とすべき前記アルミニウム製物品の外部表面の前記部分の上に(over)、酸化アルミニウムまたは窒化アルミニウムの層を設ける(applying)ステップを更に含む請求項40記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/291,367 US5756222A (en) | 1994-08-15 | 1994-08-15 | Corrosion-resistant aluminum article for semiconductor processing equipment |
US08/291367 | 1994-08-15 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7208130A Division JPH08181048A (ja) | 1994-08-15 | 1995-08-15 | 半導体プロセス装置用の耐腐食性アルミニウム物品 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009256800A JP2009256800A (ja) | 2009-11-05 |
JP5138637B2 true JP5138637B2 (ja) | 2013-02-06 |
Family
ID=23120019
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7208130A Pending JPH08181048A (ja) | 1994-08-15 | 1995-08-15 | 半導体プロセス装置用の耐腐食性アルミニウム物品 |
JP2009128191A Expired - Lifetime JP5138637B2 (ja) | 1994-08-15 | 2009-05-27 | 半導体プロセス装置用の耐腐食性アルミニウム物品 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7208130A Pending JPH08181048A (ja) | 1994-08-15 | 1995-08-15 | 半導体プロセス装置用の耐腐食性アルミニウム物品 |
Country Status (5)
Country | Link |
---|---|
US (2) | US5756222A (ja) |
EP (1) | EP0702098B1 (ja) |
JP (2) | JPH08181048A (ja) |
KR (1) | KR100259679B1 (ja) |
DE (1) | DE69506064T2 (ja) |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100473691B1 (ko) * | 1994-11-16 | 2005-04-14 | 가부시키가이샤 고베 세이코쇼 | Al또는Al합금제진공챔버부재 |
JP3362113B2 (ja) | 1997-07-15 | 2003-01-07 | 日本碍子株式会社 | 耐蝕性部材、ウエハー設置部材および耐蝕性部材の製造方法 |
JP3094000B2 (ja) * | 1997-09-12 | 2000-10-03 | 昭和電工株式会社 | フッ化表面層を有する金属材料もしくは金属皮膜ならびにフッ化方法 |
US6280597B1 (en) | 1997-09-12 | 2001-08-28 | Showa Denko K.K. | Fluorinated metal having a fluorinated layer and process for its production |
US6287436B1 (en) | 1998-02-27 | 2001-09-11 | Innovent, Inc. | Brazed honeycomb collimator |
US6182603B1 (en) | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
US6265779B1 (en) * | 1998-08-11 | 2001-07-24 | International Business Machines Corporation | Method and material for integration of fuorine-containing low-k dielectrics |
JP4194143B2 (ja) * | 1998-10-09 | 2008-12-10 | 株式会社神戸製鋼所 | ガス耐食性とプラズマ耐食性に優れたアルミニウム合金材 |
EP1144722B1 (en) * | 1998-10-31 | 2003-05-14 | Applied Materials, Inc. | Improved corrosion resistant coating |
US6379492B2 (en) | 1998-10-31 | 2002-04-30 | Applied Materials, Inc. | Corrosion resistant coating |
US6228774B1 (en) * | 1998-12-29 | 2001-05-08 | Lam Research Corporation | High aspect ratio sub-micron contact etch process in an inductively-coupled plasma processing system |
JP4054148B2 (ja) * | 1999-02-01 | 2008-02-27 | 日本碍子株式会社 | 耐食性部材の製造方法及び耐食性部材 |
JP4166386B2 (ja) * | 1999-09-30 | 2008-10-15 | 日本碍子株式会社 | 耐蝕性部材およびその製造方法 |
US6699375B1 (en) | 2000-06-29 | 2004-03-02 | Applied Materials, Inc. | Method of extending process kit consumable recycling life |
JP2002038252A (ja) * | 2000-07-27 | 2002-02-06 | Ngk Insulators Ltd | 耐熱性構造体、耐ハロゲン系腐食性ガス材料および耐ハロゲン系腐食性ガス性構造体 |
GB0026276D0 (en) * | 2000-10-27 | 2000-12-13 | Univ Ulster | Method for chlorine plasma modification of silver electrodes |
TW553822B (en) * | 2000-11-22 | 2003-09-21 | Matsushita Electric Ind Co Ltd | Magnesium alloy moldings and method for manufacturing thereof |
US6579579B2 (en) * | 2000-12-29 | 2003-06-17 | Alcan Technology & Management Ltd. | Container made of a light metal alloy and process for its manufacture |
DE10106999C1 (de) * | 2000-12-29 | 2002-07-11 | Alusuisse Tech & Man Ag | Behälter aus einer Leichtmetalllegierung und Verfahren zu seiner Herstellung |
US20020162507A1 (en) * | 2001-05-01 | 2002-11-07 | Applied Materials, Inc. | Self-renewing coating for plasma enhanced processing systems |
JP2003166047A (ja) * | 2001-09-20 | 2003-06-13 | Shin Meiwa Ind Co Ltd | ハロゲン化合物の成膜方法及び成膜装置、並びにフッ化マグネシウム膜 |
DE10163107C1 (de) * | 2001-12-24 | 2003-07-10 | Univ Hannover | Magnesium-Werkstück und Verfahren zur Ausbildung einer korrosionsschützenden Deckschicht eines Magnesium-Werkstücks |
US6632325B2 (en) * | 2002-02-07 | 2003-10-14 | Applied Materials, Inc. | Article for use in a semiconductor processing chamber and method of fabricating same |
US7033447B2 (en) | 2002-02-08 | 2006-04-25 | Applied Materials, Inc. | Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus |
US7048814B2 (en) * | 2002-02-08 | 2006-05-23 | Applied Materials, Inc. | Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus |
US6659331B2 (en) * | 2002-02-26 | 2003-12-09 | Applied Materials, Inc | Plasma-resistant, welded aluminum structures for use in semiconductor apparatus |
KR100478744B1 (ko) * | 2002-05-02 | 2005-03-28 | 주성엔지니어링(주) | 서셉터 및 이의 제조방법 |
US6565984B1 (en) | 2002-05-28 | 2003-05-20 | Applied Materials Inc. | Clean aluminum alloy for semiconductor processing equipment |
US20040221959A1 (en) * | 2003-05-09 | 2004-11-11 | Applied Materials, Inc. | Anodized substrate support |
US8372205B2 (en) * | 2003-05-09 | 2013-02-12 | Applied Materials, Inc. | Reducing electrostatic charge by roughening the susceptor |
US7323230B2 (en) * | 2004-08-02 | 2008-01-29 | Applied Materials, Inc. | Coating for aluminum component |
US7728823B2 (en) * | 2004-09-24 | 2010-06-01 | Apple Inc. | System and method for processing raw data of track pad device |
US7732056B2 (en) * | 2005-01-18 | 2010-06-08 | Applied Materials, Inc. | Corrosion-resistant aluminum component having multi-layer coating |
US20060196023A1 (en) * | 2005-03-02 | 2006-09-07 | Min-Lyul Lee | Reduced cost process modules |
JP4603402B2 (ja) * | 2005-03-31 | 2010-12-22 | 富士フイルム株式会社 | 微細構造体およびその製造方法 |
CN101218376A (zh) * | 2005-06-17 | 2008-07-09 | 国立大学法人东北大学 | 金属构件的保护膜构造及采用该保护膜构造的金属零件、半导体或平板显示器制造装置 |
TWI356857B (en) * | 2005-06-17 | 2012-01-21 | Univ Tohoku | Metal oxide film, laminate, metallic member and me |
JP5276979B2 (ja) * | 2005-06-29 | 2013-08-28 | テル・ソーラー・アクチェンゲゼルシャフト | 平坦基板を製造する方法 |
US8679252B2 (en) | 2005-09-23 | 2014-03-25 | Lam Research Corporation | Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof |
JP4512603B2 (ja) * | 2007-02-26 | 2010-07-28 | トーカロ株式会社 | 耐ハロゲンガス性の半導体加工装置用部材 |
SG155111A1 (en) | 2008-02-26 | 2009-09-30 | Kobe Steel Ltd | Surface treatment material for semiconductor manufacturing system and method for producing same |
US20110005922A1 (en) * | 2009-07-08 | 2011-01-13 | Mks Instruments, Inc. | Methods and Apparatus for Protecting Plasma Chamber Surfaces |
US8603648B2 (en) * | 2010-02-01 | 2013-12-10 | Kobe Steel, Ltd. | Reflective film laminate |
US8888982B2 (en) | 2010-06-04 | 2014-11-18 | Mks Instruments Inc. | Reduction of copper or trace metal contaminants in plasma electrolytic oxidation coatings |
US20150016030A1 (en) * | 2013-07-12 | 2015-01-15 | Apple Inc. | Reducing appearance of physical damage on cosmetic surfaces |
US10192717B2 (en) | 2014-07-21 | 2019-01-29 | Applied Materials, Inc. | Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates |
KR101550439B1 (ko) * | 2014-10-17 | 2015-09-08 | (주)씨엠코리아 | 반도체 웨이퍼용 세라믹히터 및 그 제조방법 |
CN104443271A (zh) * | 2014-12-02 | 2015-03-25 | 常熟市常连船舶设备有限公司 | 体积小的舱口盖 |
KR20190126202A (ko) | 2015-02-13 | 2019-11-08 | 엔테그리스, 아이엔씨. | 기판 제품 및 장치의 특성 및 성능을 향상시키기 위한 코팅 |
US10409295B2 (en) * | 2016-12-31 | 2019-09-10 | Applied Materials, Inc. | Methods and apparatus for enhanced flow detection repeatability of thermal-based mass flow controllers (MFCS) |
US20210002551A1 (en) * | 2018-03-02 | 2021-01-07 | Mitsubishi Gas Chemical Company, Inc. | Protective fluid for alumina, protection method, and production method for semiconductor substrate having alumina layer using same |
DE102018104935B4 (de) * | 2018-03-05 | 2023-02-09 | Dr. Ing. H.C. F. Porsche Aktiengesellschaft | Verfahren, System und Batteriemodul zur Kühlung einer mittels Federwirkung kontaktierten Leistungselektronik |
JP7090486B2 (ja) * | 2018-06-21 | 2022-06-24 | 株式会社アルバック | アルミニウム表面処理方法 |
KR20210006229A (ko) * | 2019-07-08 | 2021-01-18 | 주성엔지니어링(주) | 기판 처리 장치의 챔버 클리닝 방법 |
JPWO2021065327A1 (ja) * | 2019-10-04 | 2021-04-08 | ||
JPWO2021070529A1 (ja) * | 2019-10-07 | 2021-04-15 | ||
US20210198788A1 (en) * | 2019-12-30 | 2021-07-01 | Entegris, Inc. | Metal body having magnesium fluoride region formed therefrom |
JPWO2021182107A1 (ja) * | 2020-03-11 | 2021-09-16 | ||
TWI743991B (zh) * | 2020-09-14 | 2021-10-21 | 晨豐光電股份有限公司 | 具防撞膜層的玻璃板 |
CN112853323A (zh) * | 2020-12-31 | 2021-05-28 | 拓荆科技股份有限公司 | 一种电极板的表面处理方法及电极板 |
WO2023055653A1 (en) * | 2021-09-30 | 2023-04-06 | Entegris, Inc. | Articles having removable coatings and related methods |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3784371A (en) * | 1971-12-27 | 1974-01-08 | Dow Chemical Co | Corrosion resistant frozen wall |
US4551211A (en) * | 1983-07-19 | 1985-11-05 | Ube Industries, Ltd. | Aqueous anodizing solution and process for coloring article of magnesium or magnesium-base alloy |
US4872947A (en) * | 1986-12-19 | 1989-10-10 | Applied Materials, Inc. | CVD of silicon oxide using TEOS decomposition and in-situ planarization process |
US5158644A (en) * | 1986-12-19 | 1992-10-27 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
DE3808609A1 (de) * | 1988-03-15 | 1989-09-28 | Electro Chem Eng Gmbh | Verfahren zur erzeugung von korrosions- und verschleissbestaendigen schutzschichten auf magnesium und magnesiumlegierungen |
EP0352061B1 (en) * | 1988-07-20 | 1994-09-21 | Hashimoto Chemical Industries Co., Ltd. | Metal material with film passivated by fluorination and apparatus composed of the metal material |
JPH02213480A (ja) * | 1989-02-14 | 1990-08-24 | Nippon Light Metal Co Ltd | 高周波プラズマ発生用アルミニウム電極 |
JPH0347981A (ja) * | 1989-07-14 | 1991-02-28 | Tokyo Kasoode Kenkyusho:Kk | 半導体ウェハーのエッチング用電極の製造方法 |
US5192610A (en) * | 1990-06-07 | 1993-03-09 | Applied Materials, Inc. | Corrosion-resistant protective coating on aluminum substrate and method of forming same |
US5069938A (en) * | 1990-06-07 | 1991-12-03 | Applied Materials, Inc. | Method of forming a corrosion-resistant protective coating on aluminum substrate |
EP0460700B1 (en) * | 1990-06-07 | 1997-04-16 | Applied Materials, Inc. | Corrosion-resistant protective coating on aluminum substrate or surface and method of forming same |
JP2986859B2 (ja) * | 1990-07-05 | 1999-12-06 | 三菱アルミニウム株式会社 | アルミニウム合金材およびその製造方法 |
JP2963169B2 (ja) * | 1990-08-10 | 1999-10-12 | アプライド・マテリアルズ・ジャパン株式会社 | 高周波プラズマ発生用電極 |
JP3017528B2 (ja) * | 1990-11-27 | 2000-03-13 | アプライドマテリアルズジャパン株式会社 | プラズマ処理装置 |
CH683188A5 (de) * | 1991-01-11 | 1994-01-31 | Alusuisse Lonza Services Ag | Aluminiumoberflächen. |
JPH04340905A (ja) * | 1991-05-17 | 1992-11-27 | Tokyo Tokushu Glass Kk | 表面反射鏡 |
JPH0673596A (ja) * | 1992-08-26 | 1994-03-15 | Kobe Steel Ltd | 高耐食性MgまたはMg合金材 |
US5364496A (en) * | 1993-08-20 | 1994-11-15 | Hughes Aircraft Company | Highly durable noncontaminating surround materials for plasma etching |
-
1994
- 1994-08-15 US US08/291,367 patent/US5756222A/en not_active Expired - Lifetime
-
1995
- 1995-07-10 US US08/499,983 patent/US5811195A/en not_active Expired - Fee Related
- 1995-08-08 KR KR1019950024370A patent/KR100259679B1/ko not_active IP Right Cessation
- 1995-08-11 DE DE69506064T patent/DE69506064T2/de not_active Expired - Fee Related
- 1995-08-11 EP EP95112722A patent/EP0702098B1/en not_active Expired - Lifetime
- 1995-08-15 JP JP7208130A patent/JPH08181048A/ja active Pending
-
2009
- 2009-05-27 JP JP2009128191A patent/JP5138637B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69506064T2 (de) | 1999-07-15 |
EP0702098A1 (en) | 1996-03-20 |
JP2009256800A (ja) | 2009-11-05 |
KR100259679B1 (ko) | 2000-06-15 |
US5756222A (en) | 1998-05-26 |
JPH08181048A (ja) | 1996-07-12 |
EP0702098B1 (en) | 1998-11-18 |
KR960009051A (ko) | 1996-03-22 |
US5811195A (en) | 1998-09-22 |
DE69506064D1 (de) | 1998-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5138637B2 (ja) | 半導体プロセス装置用の耐腐食性アルミニウム物品 | |
US6713188B2 (en) | Clean aluminum alloy for semiconductor processing equipment | |
US7033447B2 (en) | Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus | |
US7048814B2 (en) | Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus | |
US5494713A (en) | Method for treating surface of aluminum material and plasma treating apparatus | |
US7732056B2 (en) | Corrosion-resistant aluminum component having multi-layer coating | |
KR100781408B1 (ko) | 반도체 처리 장치에서의 처리실의 클리닝 방법 | |
JP2831488B2 (ja) | アルミニウム基材に耐蝕性保護被膜を形成する方法 | |
US5891253A (en) | Corrosion resistant apparatus | |
US20020066532A1 (en) | Corrosion-resistant protective coating for an apparatus and method for processing a substrate | |
US20220181124A1 (en) | Erosion resistant metal fluoride coatings, methods of preparation and methods of use thereof | |
JP2023501896A (ja) | 原子層堆積により堆積されたハフニウムアルミニウム酸化物コーティング | |
US6027792A (en) | Coating film excellent in resistance to halogen-containing gas corrosion and halogen-containing plasma corrosion, laminated structure coated with the same, and method for producing the same | |
US6242111B1 (en) | Anodized aluminum susceptor for forming integrated circuit structures and method of making anodized aluminum susceptor | |
US6057240A (en) | Aqueous surfactant solution method for stripping metal plasma etch deposited oxidized metal impregnated polymer residue layers from patterned metal layers | |
CN113891960B (zh) | 耐蚀性构件 | |
KR200418119Y1 (ko) | 다층 코팅된 내식성 알루미늄 부품 | |
JPH1161410A (ja) | 真空チャンバ部材及びその製造方法 | |
JP7460771B2 (ja) | フッ化マグネシウム領域が形成させる金属体 | |
JP3908291B2 (ja) | 耐ハロゲン系ガス腐食性及び耐ハロゲン系プラズマ腐食性に優れたコーティング膜並びに該コーティング膜を施した積層構造体 | |
JP2004068145A (ja) | 半導体処理装置のための無菌アルミニウム合金 | |
KR100218282B1 (ko) | 불화부동태막을 형성하여된 공업재료 및 그의 제조방법 | |
KR20220062697A (ko) | 내부식성 및 절연특성이 우수한 알루미늄 합금 부재의 제조방법 및 표면처리된 반도체 장치 | |
JP3684259B2 (ja) | 耐ハロゲン系ガス腐食性及び耐ハロゲン系プラズマ腐食性に優れたコーティング膜並びに該コーティング膜を施した積層構造体 | |
JPH06338499A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20101130 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101210 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110426 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110531 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110829 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110901 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110929 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20111004 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111026 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120710 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121001 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121023 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121114 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151122 Year of fee payment: 3 |
|
EXPY | Cancellation because of completion of term |