JP5127147B2 - 基板吸着脱離方法 - Google Patents

基板吸着脱離方法 Download PDF

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Publication number
JP5127147B2
JP5127147B2 JP2006062884A JP2006062884A JP5127147B2 JP 5127147 B2 JP5127147 B2 JP 5127147B2 JP 2006062884 A JP2006062884 A JP 2006062884A JP 2006062884 A JP2006062884 A JP 2006062884A JP 5127147 B2 JP5127147 B2 JP 5127147B2
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JP
Japan
Prior art keywords
substrate
frequency power
chamber
electrode plate
wafer
Prior art date
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Expired - Fee Related
Application number
JP2006062884A
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English (en)
Japanese (ja)
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JP2007242870A (ja
JP2007242870A5 (enExample
Inventor
真之 沢田石
昭貴 清水
栄一 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2006062884A priority Critical patent/JP5127147B2/ja
Priority to KR1020070014576A priority patent/KR100853575B1/ko
Priority to US11/674,843 priority patent/US20070211402A1/en
Priority to CNA2007100860633A priority patent/CN101034679A/zh
Publication of JP2007242870A publication Critical patent/JP2007242870A/ja
Publication of JP2007242870A5 publication Critical patent/JP2007242870A5/ja
Application granted granted Critical
Publication of JP5127147B2 publication Critical patent/JP5127147B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2006062884A 2006-03-08 2006-03-08 基板吸着脱離方法 Expired - Fee Related JP5127147B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006062884A JP5127147B2 (ja) 2006-03-08 2006-03-08 基板吸着脱離方法
KR1020070014576A KR100853575B1 (ko) 2006-03-08 2007-02-12 기판 처리 장치, 기판 흡착 방법 및 기억 매체
US11/674,843 US20070211402A1 (en) 2006-03-08 2007-02-14 Substrate processing apparatus, substrate attracting method, and storage medium
CNA2007100860633A CN101034679A (zh) 2006-03-08 2007-03-08 基板处理装置、基板吸附方法和存储介质

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006062884A JP5127147B2 (ja) 2006-03-08 2006-03-08 基板吸着脱離方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012137101A Division JP5596082B2 (ja) 2012-06-18 2012-06-18 基板吸着離脱方法及び基板処理方法

Publications (3)

Publication Number Publication Date
JP2007242870A JP2007242870A (ja) 2007-09-20
JP2007242870A5 JP2007242870A5 (enExample) 2009-03-19
JP5127147B2 true JP5127147B2 (ja) 2013-01-23

Family

ID=38588121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006062884A Expired - Fee Related JP5127147B2 (ja) 2006-03-08 2006-03-08 基板吸着脱離方法

Country Status (3)

Country Link
JP (1) JP5127147B2 (enExample)
KR (1) KR100853575B1 (enExample)
CN (1) CN101034679A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009076129A (ja) 2007-09-19 2009-04-09 Kobe Steel Ltd 読み出し専用の光情報記録媒体
JP2009212293A (ja) * 2008-03-04 2009-09-17 Tokyo Electron Ltd 基板処理装置用の部品及び基板処理装置
JP5875775B2 (ja) * 2011-03-30 2016-03-02 東京エレクトロン株式会社 基板除去方法及び記憶媒体
CN105097423B (zh) * 2014-05-12 2018-09-18 中芯国际集成电路制造(上海)有限公司 等离子体反应器及清除等离子体反应腔室颗粒污染的方法
JP6496579B2 (ja) * 2015-03-17 2019-04-03 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6054470B2 (ja) * 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置
CN109107987A (zh) * 2017-06-22 2019-01-01 北京北方华创微电子装备有限公司 一种吹扫方法
CN108648995B (zh) * 2018-05-22 2021-03-19 深圳市盛鸿运科技有限公司 一种半导体集成电路用硅晶片刻蚀方法
JP7398909B2 (ja) * 2019-09-12 2023-12-15 東京エレクトロン株式会社 静電吸着方法及びプラズマ処理装置
CN114334700A (zh) * 2020-09-29 2022-04-12 长鑫存储技术有限公司 半导体设备电极板的安装治具
KR102442285B1 (ko) * 2022-03-14 2022-09-13 에이피티씨 주식회사 플라즈마 에칭 시스템
TWI836422B (zh) * 2022-05-09 2024-03-21 南韓商自適應等離子體技術公司 等離子體蝕刻系統

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0269956A (ja) * 1988-09-05 1990-03-08 Toshiba Corp 静電チャック方法及び静電チャック装置
JPH04240747A (ja) * 1991-01-24 1992-08-28 Fujitsu Ltd 半導体装置の製造方法
JP2879887B2 (ja) * 1995-08-24 1999-04-05 東京エレクトロン株式会社 プラズマ処理方法
JPH1074734A (ja) * 1996-09-02 1998-03-17 Toshiba Corp プラズマ処理装置と半導体装置の製造方法
JP2985761B2 (ja) * 1996-03-18 1999-12-06 株式会社日立製作所 試料処理方法
JPH10209126A (ja) * 1997-01-23 1998-08-07 Hitachi Ltd プラズマエッチング装置
JP2002100614A (ja) * 2000-09-25 2002-04-05 Nec Corp 半導体製造装置および半導体製造方法
JP2002164328A (ja) * 2000-11-27 2002-06-07 Seiko Epson Corp ドライエッチング装置
US6620520B2 (en) * 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
KR20050018063A (ko) * 2003-08-13 2005-02-23 삼성전자주식회사 반도체 제조장치의 기판 척킹/디척킹 장치 및 그의 방법
KR100544897B1 (ko) * 2004-11-30 2006-01-24 (주)아이씨디 플라즈마 쳄버용 정전기 척

Also Published As

Publication number Publication date
CN101034679A (zh) 2007-09-12
JP2007242870A (ja) 2007-09-20
KR100853575B1 (ko) 2008-08-21
KR20070092104A (ko) 2007-09-12

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