JP2007242870A5 - - Google Patents

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Publication number
JP2007242870A5
JP2007242870A5 JP2006062884A JP2006062884A JP2007242870A5 JP 2007242870 A5 JP2007242870 A5 JP 2007242870A5 JP 2006062884 A JP2006062884 A JP 2006062884A JP 2006062884 A JP2006062884 A JP 2006062884A JP 2007242870 A5 JP2007242870 A5 JP 2007242870A5
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JP
Japan
Prior art keywords
semiconductor wafer
power source
electrode plate
mounting table
electrostatic chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006062884A
Other languages
English (en)
Japanese (ja)
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JP2007242870A (ja
JP5127147B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006062884A priority Critical patent/JP5127147B2/ja
Priority claimed from JP2006062884A external-priority patent/JP5127147B2/ja
Priority to KR1020070014576A priority patent/KR100853575B1/ko
Priority to US11/674,843 priority patent/US20070211402A1/en
Priority to CNA2007100860633A priority patent/CN101034679A/zh
Publication of JP2007242870A publication Critical patent/JP2007242870A/ja
Publication of JP2007242870A5 publication Critical patent/JP2007242870A5/ja
Application granted granted Critical
Publication of JP5127147B2 publication Critical patent/JP5127147B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006062884A 2006-03-08 2006-03-08 基板吸着脱離方法 Expired - Fee Related JP5127147B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006062884A JP5127147B2 (ja) 2006-03-08 2006-03-08 基板吸着脱離方法
KR1020070014576A KR100853575B1 (ko) 2006-03-08 2007-02-12 기판 처리 장치, 기판 흡착 방법 및 기억 매체
US11/674,843 US20070211402A1 (en) 2006-03-08 2007-02-14 Substrate processing apparatus, substrate attracting method, and storage medium
CNA2007100860633A CN101034679A (zh) 2006-03-08 2007-03-08 基板处理装置、基板吸附方法和存储介质

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006062884A JP5127147B2 (ja) 2006-03-08 2006-03-08 基板吸着脱離方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012137101A Division JP5596082B2 (ja) 2012-06-18 2012-06-18 基板吸着離脱方法及び基板処理方法

Publications (3)

Publication Number Publication Date
JP2007242870A JP2007242870A (ja) 2007-09-20
JP2007242870A5 true JP2007242870A5 (enExample) 2009-03-19
JP5127147B2 JP5127147B2 (ja) 2013-01-23

Family

ID=38588121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006062884A Expired - Fee Related JP5127147B2 (ja) 2006-03-08 2006-03-08 基板吸着脱離方法

Country Status (3)

Country Link
JP (1) JP5127147B2 (enExample)
KR (1) KR100853575B1 (enExample)
CN (1) CN101034679A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009076129A (ja) 2007-09-19 2009-04-09 Kobe Steel Ltd 読み出し専用の光情報記録媒体
JP2009212293A (ja) * 2008-03-04 2009-09-17 Tokyo Electron Ltd 基板処理装置用の部品及び基板処理装置
JP5875775B2 (ja) * 2011-03-30 2016-03-02 東京エレクトロン株式会社 基板除去方法及び記憶媒体
CN105097423B (zh) * 2014-05-12 2018-09-18 中芯国际集成电路制造(上海)有限公司 等离子体反应器及清除等离子体反应腔室颗粒污染的方法
JP6496579B2 (ja) * 2015-03-17 2019-04-03 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6054470B2 (ja) * 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置
CN109107987A (zh) * 2017-06-22 2019-01-01 北京北方华创微电子装备有限公司 一种吹扫方法
CN108648995B (zh) * 2018-05-22 2021-03-19 深圳市盛鸿运科技有限公司 一种半导体集成电路用硅晶片刻蚀方法
JP7398909B2 (ja) * 2019-09-12 2023-12-15 東京エレクトロン株式会社 静電吸着方法及びプラズマ処理装置
CN114334700A (zh) * 2020-09-29 2022-04-12 长鑫存储技术有限公司 半导体设备电极板的安装治具
KR102442285B1 (ko) * 2022-03-14 2022-09-13 에이피티씨 주식회사 플라즈마 에칭 시스템
TWI836422B (zh) * 2022-05-09 2024-03-21 南韓商自適應等離子體技術公司 等離子體蝕刻系統

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0269956A (ja) * 1988-09-05 1990-03-08 Toshiba Corp 静電チャック方法及び静電チャック装置
JPH04240747A (ja) * 1991-01-24 1992-08-28 Fujitsu Ltd 半導体装置の製造方法
JP2879887B2 (ja) * 1995-08-24 1999-04-05 東京エレクトロン株式会社 プラズマ処理方法
JPH1074734A (ja) * 1996-09-02 1998-03-17 Toshiba Corp プラズマ処理装置と半導体装置の製造方法
JP2985761B2 (ja) * 1996-03-18 1999-12-06 株式会社日立製作所 試料処理方法
JPH10209126A (ja) * 1997-01-23 1998-08-07 Hitachi Ltd プラズマエッチング装置
JP2002100614A (ja) * 2000-09-25 2002-04-05 Nec Corp 半導体製造装置および半導体製造方法
JP2002164328A (ja) * 2000-11-27 2002-06-07 Seiko Epson Corp ドライエッチング装置
US6620520B2 (en) * 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
KR20050018063A (ko) * 2003-08-13 2005-02-23 삼성전자주식회사 반도체 제조장치의 기판 척킹/디척킹 장치 및 그의 방법
KR100544897B1 (ko) * 2004-11-30 2006-01-24 (주)아이씨디 플라즈마 쳄버용 정전기 척

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