CN101034679A - 基板处理装置、基板吸附方法和存储介质 - Google Patents

基板处理装置、基板吸附方法和存储介质 Download PDF

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Publication number
CN101034679A
CN101034679A CNA2007100860633A CN200710086063A CN101034679A CN 101034679 A CN101034679 A CN 101034679A CN A2007100860633 A CNA2007100860633 A CN A2007100860633A CN 200710086063 A CN200710086063 A CN 200710086063A CN 101034679 A CN101034679 A CN 101034679A
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CN
China
Prior art keywords
substrate
power supply
electrode plate
frequency power
electrostatic chuck
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Pending
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CNA2007100860633A
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English (en)
Chinese (zh)
Inventor
泽田石真之
清水昭贵
西村荣一
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN101034679A publication Critical patent/CN101034679A/zh
Pending legal-status Critical Current

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    • H10P72/722—
    • H10P72/0402—

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CNA2007100860633A 2006-03-08 2007-03-08 基板处理装置、基板吸附方法和存储介质 Pending CN101034679A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006062884A JP5127147B2 (ja) 2006-03-08 2006-03-08 基板吸着脱離方法
JP2006062884 2006-03-08

Publications (1)

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CN101034679A true CN101034679A (zh) 2007-09-12

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CNA2007100860633A Pending CN101034679A (zh) 2006-03-08 2007-03-08 基板处理装置、基板吸附方法和存储介质

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JP (1) JP5127147B2 (enExample)
KR (1) KR100853575B1 (enExample)
CN (1) CN101034679A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097423A (zh) * 2014-05-12 2015-11-25 中芯国际集成电路制造(上海)有限公司 等离子体反应器及清除等离子体反应腔室颗粒污染的方法
CN105990194A (zh) * 2015-03-17 2016-10-05 东京毅力科创株式会社 基板处理方法和基板处理装置
CN107615460A (zh) * 2015-05-26 2018-01-19 株式会社日本制钢所 原子层生长装置
CN108648995A (zh) * 2018-05-22 2018-10-12 徐亚琴 一种半导体集成电路用硅晶片刻蚀方法
CN109107987A (zh) * 2017-06-22 2019-01-01 北京北方华创微电子装备有限公司 一种吹扫方法
CN112490103A (zh) * 2019-09-12 2021-03-12 东京毅力科创株式会社 静电吸附方法和等离子体处理装置
WO2022068423A1 (zh) * 2020-09-29 2022-04-07 长鑫存储技术有限公司 半导体设备电极板的安装治具
TWI836422B (zh) * 2022-05-09 2024-03-21 南韓商自適應等離子體技術公司 等離子體蝕刻系統

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009076129A (ja) 2007-09-19 2009-04-09 Kobe Steel Ltd 読み出し専用の光情報記録媒体
JP2009212293A (ja) * 2008-03-04 2009-09-17 Tokyo Electron Ltd 基板処理装置用の部品及び基板処理装置
JP5875775B2 (ja) * 2011-03-30 2016-03-02 東京エレクトロン株式会社 基板除去方法及び記憶媒体
KR102442285B1 (ko) * 2022-03-14 2022-09-13 에이피티씨 주식회사 플라즈마 에칭 시스템

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0269956A (ja) * 1988-09-05 1990-03-08 Toshiba Corp 静電チャック方法及び静電チャック装置
JPH04240747A (ja) * 1991-01-24 1992-08-28 Fujitsu Ltd 半導体装置の製造方法
JP2879887B2 (ja) * 1995-08-24 1999-04-05 東京エレクトロン株式会社 プラズマ処理方法
JPH1074734A (ja) * 1996-09-02 1998-03-17 Toshiba Corp プラズマ処理装置と半導体装置の製造方法
JP2985761B2 (ja) * 1996-03-18 1999-12-06 株式会社日立製作所 試料処理方法
JPH10209126A (ja) * 1997-01-23 1998-08-07 Hitachi Ltd プラズマエッチング装置
JP2002100614A (ja) * 2000-09-25 2002-04-05 Nec Corp 半導体製造装置および半導体製造方法
JP2002164328A (ja) * 2000-11-27 2002-06-07 Seiko Epson Corp ドライエッチング装置
US6620520B2 (en) * 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
KR20050018063A (ko) * 2003-08-13 2005-02-23 삼성전자주식회사 반도체 제조장치의 기판 척킹/디척킹 장치 및 그의 방법
KR100544897B1 (ko) * 2004-11-30 2006-01-24 (주)아이씨디 플라즈마 쳄버용 정전기 척

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097423A (zh) * 2014-05-12 2015-11-25 中芯国际集成电路制造(上海)有限公司 等离子体反应器及清除等离子体反应腔室颗粒污染的方法
CN105097423B (zh) * 2014-05-12 2018-09-18 中芯国际集成电路制造(上海)有限公司 等离子体反应器及清除等离子体反应腔室颗粒污染的方法
CN105990194A (zh) * 2015-03-17 2016-10-05 东京毅力科创株式会社 基板处理方法和基板处理装置
CN107615460A (zh) * 2015-05-26 2018-01-19 株式会社日本制钢所 原子层生长装置
CN107615460B (zh) * 2015-05-26 2020-07-14 株式会社日本制钢所 原子层生长装置
CN109107987A (zh) * 2017-06-22 2019-01-01 北京北方华创微电子装备有限公司 一种吹扫方法
CN108648995A (zh) * 2018-05-22 2018-10-12 徐亚琴 一种半导体集成电路用硅晶片刻蚀方法
CN108648995B (zh) * 2018-05-22 2021-03-19 深圳市盛鸿运科技有限公司 一种半导体集成电路用硅晶片刻蚀方法
CN112490103A (zh) * 2019-09-12 2021-03-12 东京毅力科创株式会社 静电吸附方法和等离子体处理装置
WO2022068423A1 (zh) * 2020-09-29 2022-04-07 长鑫存储技术有限公司 半导体设备电极板的安装治具
US11348820B2 (en) 2020-09-29 2022-05-31 Changxin Memory Technologies, Inc. Installation fixture for electrode plate of semiconductor equipment
TWI836422B (zh) * 2022-05-09 2024-03-21 南韓商自適應等離子體技術公司 等離子體蝕刻系統

Also Published As

Publication number Publication date
KR20070092104A (ko) 2007-09-12
JP5127147B2 (ja) 2013-01-23
KR100853575B1 (ko) 2008-08-21
JP2007242870A (ja) 2007-09-20

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Open date: 20070912