CN101034679A - 基板处理装置、基板吸附方法和存储介质 - Google Patents

基板处理装置、基板吸附方法和存储介质 Download PDF

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Publication number
CN101034679A
CN101034679A CNA2007100860633A CN200710086063A CN101034679A CN 101034679 A CN101034679 A CN 101034679A CN A2007100860633 A CNA2007100860633 A CN A2007100860633A CN 200710086063 A CN200710086063 A CN 200710086063A CN 101034679 A CN101034679 A CN 101034679A
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CN
China
Prior art keywords
substrate
battery lead
lead plate
high frequency
mounting table
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007100860633A
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English (en)
Chinese (zh)
Inventor
泽田石真之
清水昭贵
西村荣一
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101034679A publication Critical patent/CN101034679A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CNA2007100860633A 2006-03-08 2007-03-08 基板处理装置、基板吸附方法和存储介质 Pending CN101034679A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006062884 2006-03-08
JP2006062884A JP5127147B2 (ja) 2006-03-08 2006-03-08 基板吸着脱離方法

Publications (1)

Publication Number Publication Date
CN101034679A true CN101034679A (zh) 2007-09-12

Family

ID=38588121

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007100860633A Pending CN101034679A (zh) 2006-03-08 2007-03-08 基板处理装置、基板吸附方法和存储介质

Country Status (3)

Country Link
JP (1) JP5127147B2 (enExample)
KR (1) KR100853575B1 (enExample)
CN (1) CN101034679A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097423A (zh) * 2014-05-12 2015-11-25 中芯国际集成电路制造(上海)有限公司 等离子体反应器及清除等离子体反应腔室颗粒污染的方法
CN105990194A (zh) * 2015-03-17 2016-10-05 东京毅力科创株式会社 基板处理方法和基板处理装置
CN107615460A (zh) * 2015-05-26 2018-01-19 株式会社日本制钢所 原子层生长装置
CN108648995A (zh) * 2018-05-22 2018-10-12 徐亚琴 一种半导体集成电路用硅晶片刻蚀方法
CN109107987A (zh) * 2017-06-22 2019-01-01 北京北方华创微电子装备有限公司 一种吹扫方法
CN112490103A (zh) * 2019-09-12 2021-03-12 东京毅力科创株式会社 静电吸附方法和等离子体处理装置
WO2022068423A1 (zh) * 2020-09-29 2022-04-07 长鑫存储技术有限公司 半导体设备电极板的安装治具
TWI836422B (zh) * 2022-05-09 2024-03-21 南韓商自適應等離子體技術公司 等離子體蝕刻系統

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009076129A (ja) 2007-09-19 2009-04-09 Kobe Steel Ltd 読み出し専用の光情報記録媒体
JP2009212293A (ja) * 2008-03-04 2009-09-17 Tokyo Electron Ltd 基板処理装置用の部品及び基板処理装置
JP5875775B2 (ja) * 2011-03-30 2016-03-02 東京エレクトロン株式会社 基板除去方法及び記憶媒体
KR102442285B1 (ko) * 2022-03-14 2022-09-13 에이피티씨 주식회사 플라즈마 에칭 시스템

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0269956A (ja) * 1988-09-05 1990-03-08 Toshiba Corp 静電チャック方法及び静電チャック装置
JPH04240747A (ja) * 1991-01-24 1992-08-28 Fujitsu Ltd 半導体装置の製造方法
JP2879887B2 (ja) * 1995-08-24 1999-04-05 東京エレクトロン株式会社 プラズマ処理方法
JPH1074734A (ja) * 1996-09-02 1998-03-17 Toshiba Corp プラズマ処理装置と半導体装置の製造方法
JP2985761B2 (ja) * 1996-03-18 1999-12-06 株式会社日立製作所 試料処理方法
JPH10209126A (ja) * 1997-01-23 1998-08-07 Hitachi Ltd プラズマエッチング装置
JP2002100614A (ja) * 2000-09-25 2002-04-05 Nec Corp 半導体製造装置および半導体製造方法
JP2002164328A (ja) * 2000-11-27 2002-06-07 Seiko Epson Corp ドライエッチング装置
US6620520B2 (en) * 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
KR20050018063A (ko) * 2003-08-13 2005-02-23 삼성전자주식회사 반도체 제조장치의 기판 척킹/디척킹 장치 및 그의 방법
KR100544897B1 (ko) * 2004-11-30 2006-01-24 (주)아이씨디 플라즈마 쳄버용 정전기 척

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097423A (zh) * 2014-05-12 2015-11-25 中芯国际集成电路制造(上海)有限公司 等离子体反应器及清除等离子体反应腔室颗粒污染的方法
CN105097423B (zh) * 2014-05-12 2018-09-18 中芯国际集成电路制造(上海)有限公司 等离子体反应器及清除等离子体反应腔室颗粒污染的方法
CN105990194A (zh) * 2015-03-17 2016-10-05 东京毅力科创株式会社 基板处理方法和基板处理装置
CN107615460A (zh) * 2015-05-26 2018-01-19 株式会社日本制钢所 原子层生长装置
CN107615460B (zh) * 2015-05-26 2020-07-14 株式会社日本制钢所 原子层生长装置
CN109107987A (zh) * 2017-06-22 2019-01-01 北京北方华创微电子装备有限公司 一种吹扫方法
CN108648995A (zh) * 2018-05-22 2018-10-12 徐亚琴 一种半导体集成电路用硅晶片刻蚀方法
CN108648995B (zh) * 2018-05-22 2021-03-19 深圳市盛鸿运科技有限公司 一种半导体集成电路用硅晶片刻蚀方法
CN112490103A (zh) * 2019-09-12 2021-03-12 东京毅力科创株式会社 静电吸附方法和等离子体处理装置
WO2022068423A1 (zh) * 2020-09-29 2022-04-07 长鑫存储技术有限公司 半导体设备电极板的安装治具
US11348820B2 (en) 2020-09-29 2022-05-31 Changxin Memory Technologies, Inc. Installation fixture for electrode plate of semiconductor equipment
TWI836422B (zh) * 2022-05-09 2024-03-21 南韓商自適應等離子體技術公司 等離子體蝕刻系統

Also Published As

Publication number Publication date
JP2007242870A (ja) 2007-09-20
KR100853575B1 (ko) 2008-08-21
KR20070092104A (ko) 2007-09-12
JP5127147B2 (ja) 2013-01-23

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Open date: 20070912