JP5122212B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5122212B2
JP5122212B2 JP2007201687A JP2007201687A JP5122212B2 JP 5122212 B2 JP5122212 B2 JP 5122212B2 JP 2007201687 A JP2007201687 A JP 2007201687A JP 2007201687 A JP2007201687 A JP 2007201687A JP 5122212 B2 JP5122212 B2 JP 5122212B2
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JP
Japan
Prior art keywords
diffusion layer
semiconductor device
gate
island
row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007201687A
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English (en)
Japanese (ja)
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JP2009038226A5 (enExample
JP2009038226A (ja
Inventor
富士雄 舛岡
広記 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisantis Electronics Singapore Pte Ltd
Original Assignee
Unisantis Electronics Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2007201687A priority Critical patent/JP5122212B2/ja
Application filed by Unisantis Electronics Singapore Pte Ltd filed Critical Unisantis Electronics Singapore Pte Ltd
Priority to CN200880106479XA priority patent/CN101803023B/zh
Priority to EP08764759.0A priority patent/EP2175489B1/en
Priority to PCT/JP2008/059731 priority patent/WO2009016880A1/ja
Priority to KR1020107004627A priority patent/KR101128117B1/ko
Priority to TW097120153A priority patent/TWI443806B/zh
Publication of JP2009038226A publication Critical patent/JP2009038226A/ja
Priority to US12/697,683 priority patent/US7919990B2/en
Publication of JP2009038226A5 publication Critical patent/JP2009038226A5/ja
Application granted granted Critical
Publication of JP5122212B2 publication Critical patent/JP5122212B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0179—Manufacturing their gate conductors the gate conductors having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0195—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2007201687A 2007-08-02 2007-08-02 半導体装置 Active JP5122212B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2007201687A JP5122212B2 (ja) 2007-08-02 2007-08-02 半導体装置
EP08764759.0A EP2175489B1 (en) 2007-08-02 2008-05-27 Semiconductor device
PCT/JP2008/059731 WO2009016880A1 (ja) 2007-08-02 2008-05-27 半導体装置
KR1020107004627A KR101128117B1 (ko) 2007-08-02 2008-05-27 반도체 장치
CN200880106479XA CN101803023B (zh) 2007-08-02 2008-05-27 半导体器件
TW097120153A TWI443806B (zh) 2007-08-02 2008-05-30 半導體裝置
US12/697,683 US7919990B2 (en) 2007-08-02 2010-02-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007201687A JP5122212B2 (ja) 2007-08-02 2007-08-02 半導体装置

Publications (3)

Publication Number Publication Date
JP2009038226A JP2009038226A (ja) 2009-02-19
JP2009038226A5 JP2009038226A5 (enExample) 2011-08-11
JP5122212B2 true JP5122212B2 (ja) 2013-01-16

Family

ID=40304119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007201687A Active JP5122212B2 (ja) 2007-08-02 2007-08-02 半導体装置

Country Status (7)

Country Link
US (1) US7919990B2 (enExample)
EP (1) EP2175489B1 (enExample)
JP (1) JP5122212B2 (enExample)
KR (1) KR101128117B1 (enExample)
CN (1) CN101803023B (enExample)
TW (1) TWI443806B (enExample)
WO (1) WO2009016880A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5444694B2 (ja) * 2008-11-12 2014-03-19 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
SG165252A1 (en) 2009-03-25 2010-10-28 Unisantis Electronics Jp Ltd Semiconductor device and production method therefor
JP4487221B1 (ja) 2009-04-17 2010-06-23 日本ユニサンティスエレクトロニクス株式会社 半導体装置
JP5032532B2 (ja) 2009-06-05 2012-09-26 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5006378B2 (ja) 2009-08-11 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5006379B2 (ja) 2009-09-16 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP5006375B2 (ja) * 2009-12-10 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5128630B2 (ja) * 2010-04-21 2013-01-23 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
US9318607B2 (en) * 2013-07-12 2016-04-19 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
WO2015019469A1 (ja) * 2013-08-08 2015-02-12 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP5677643B1 (ja) * 2013-08-08 2015-02-25 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
US9373623B2 (en) 2013-12-20 2016-06-21 Taiwan Semiconductor Manufacturing Company Limited Multi-layer semiconductor structures for fabricating inverter chains
US9653457B2 (en) 2015-01-16 2017-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked device and associated layout structure

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113661A (ja) * 1984-06-29 1986-01-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JPS6337633A (ja) * 1986-07-31 1988-02-18 Nec Corp 半導体集積回路装置
JPH0770613B2 (ja) * 1988-02-29 1995-07-31 日本電気株式会社 半導体集積回路の製造方法
JP2703970B2 (ja) * 1989-01-17 1998-01-26 株式会社東芝 Ｍｏｓ型半導体装置
US5258635A (en) * 1988-09-06 1993-11-02 Kabushiki Kaisha Toshiba MOS-type semiconductor integrated circuit device
JP3057661B2 (ja) 1988-09-06 2000-07-04 株式会社東芝 半導体装置
JP2950558B2 (ja) 1989-11-01 1999-09-20 株式会社東芝 半導体装置
US5308782A (en) * 1992-03-02 1994-05-03 Motorola Semiconductor memory device and method of formation
JP3325072B2 (ja) * 1992-03-02 2002-09-17 モトローラ・インコーポレイテッド 半導体メモリ装置
JP3403231B2 (ja) * 1993-05-12 2003-05-06 三菱電機株式会社 半導体装置およびその製造方法
TW377493B (en) * 1996-12-27 1999-12-21 Matsushita Electric Industrial Co Ltd Semiconductor integrated circuit device
JP4014708B2 (ja) * 1997-08-21 2007-11-28 株式会社ルネサステクノロジ 半導体集積回路装置の設計方法
US6461900B1 (en) * 2001-10-18 2002-10-08 Chartered Semiconductor Manufacturing Ltd. Method to form a self-aligned CMOS inverter using vertical device integration
JP2004079694A (ja) * 2002-08-14 2004-03-11 Fujitsu Ltd スタンダードセル
JP5130596B2 (ja) * 2007-05-30 2013-01-30 国立大学法人東北大学 半導体装置
JP2009037115A (ja) * 2007-08-03 2009-02-19 Sony Corp 半導体装置およびその製造方法、並びに表示装置
US8188537B2 (en) * 2008-01-29 2012-05-29 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor

Also Published As

Publication number Publication date
US7919990B2 (en) 2011-04-05
KR101128117B1 (ko) 2012-07-12
CN101803023B (zh) 2012-05-23
EP2175489A4 (en) 2012-08-22
TW200908292A (en) 2009-02-16
KR20100059829A (ko) 2010-06-04
EP2175489B1 (en) 2013-07-24
US20100194438A1 (en) 2010-08-05
EP2175489A1 (en) 2010-04-14
CN101803023A (zh) 2010-08-11
TWI443806B (zh) 2014-07-01
WO2009016880A1 (ja) 2009-02-05
JP2009038226A (ja) 2009-02-19

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