KR101128117B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101128117B1
KR101128117B1 KR1020107004627A KR20107004627A KR101128117B1 KR 101128117 B1 KR101128117 B1 KR 101128117B1 KR 1020107004627 A KR1020107004627 A KR 1020107004627A KR 20107004627 A KR20107004627 A KR 20107004627A KR 101128117 B1 KR101128117 B1 KR 101128117B1
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KR
South Korea
Prior art keywords
diffusion layer
semiconductor device
gate
island
column
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Expired - Fee Related
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KR1020107004627A
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English (en)
Korean (ko)
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KR20100059829A (ko
Inventor
후지오 마스오카
히로키 나카무라
Original Assignee
유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드
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Publication of KR20100059829A publication Critical patent/KR20100059829A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0179—Manufacturing their gate conductors the gate conductors having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0195—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020107004627A 2007-08-02 2008-05-27 반도체 장치 Expired - Fee Related KR101128117B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007201687A JP5122212B2 (ja) 2007-08-02 2007-08-02 半導体装置
JPJP-P-2007-201687 2007-08-02
PCT/JP2008/059731 WO2009016880A1 (ja) 2007-08-02 2008-05-27 半導体装置

Publications (2)

Publication Number Publication Date
KR20100059829A KR20100059829A (ko) 2010-06-04
KR101128117B1 true KR101128117B1 (ko) 2012-07-12

Family

ID=40304119

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107004627A Expired - Fee Related KR101128117B1 (ko) 2007-08-02 2008-05-27 반도체 장치

Country Status (7)

Country Link
US (1) US7919990B2 (enExample)
EP (1) EP2175489B1 (enExample)
JP (1) JP5122212B2 (enExample)
KR (1) KR101128117B1 (enExample)
CN (1) CN101803023B (enExample)
TW (1) TWI443806B (enExample)
WO (1) WO2009016880A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5444694B2 (ja) * 2008-11-12 2014-03-19 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
SG165252A1 (en) 2009-03-25 2010-10-28 Unisantis Electronics Jp Ltd Semiconductor device and production method therefor
JP4487221B1 (ja) 2009-04-17 2010-06-23 日本ユニサンティスエレクトロニクス株式会社 半導体装置
JP5032532B2 (ja) 2009-06-05 2012-09-26 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5006378B2 (ja) 2009-08-11 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5006379B2 (ja) 2009-09-16 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP5006375B2 (ja) * 2009-12-10 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5128630B2 (ja) * 2010-04-21 2013-01-23 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
US9318607B2 (en) * 2013-07-12 2016-04-19 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
WO2015019469A1 (ja) * 2013-08-08 2015-02-12 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP5677643B1 (ja) * 2013-08-08 2015-02-25 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
US9373623B2 (en) 2013-12-20 2016-06-21 Taiwan Semiconductor Manufacturing Company Limited Multi-layer semiconductor structures for fabricating inverter chains
US9653457B2 (en) 2015-01-16 2017-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked device and associated layout structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113661A (ja) 1984-06-29 1986-01-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JP2003179160A (ja) 2001-10-18 2003-06-27 Chartered Semiconductor Mfg Ltd 縦形デバイスの集積化を用いて自己整合性ｃｍｏｓインバータを形成する方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6337633A (ja) * 1986-07-31 1988-02-18 Nec Corp 半導体集積回路装置
JPH0770613B2 (ja) * 1988-02-29 1995-07-31 日本電気株式会社 半導体集積回路の製造方法
JP2703970B2 (ja) * 1989-01-17 1998-01-26 株式会社東芝 Ｍｏｓ型半導体装置
US5258635A (en) * 1988-09-06 1993-11-02 Kabushiki Kaisha Toshiba MOS-type semiconductor integrated circuit device
JP3057661B2 (ja) 1988-09-06 2000-07-04 株式会社東芝 半導体装置
JP2950558B2 (ja) 1989-11-01 1999-09-20 株式会社東芝 半導体装置
US5308782A (en) * 1992-03-02 1994-05-03 Motorola Semiconductor memory device and method of formation
JP3325072B2 (ja) * 1992-03-02 2002-09-17 モトローラ・インコーポレイテッド 半導体メモリ装置
JP3403231B2 (ja) * 1993-05-12 2003-05-06 三菱電機株式会社 半導体装置およびその製造方法
TW377493B (en) * 1996-12-27 1999-12-21 Matsushita Electric Industrial Co Ltd Semiconductor integrated circuit device
JP4014708B2 (ja) * 1997-08-21 2007-11-28 株式会社ルネサステクノロジ 半導体集積回路装置の設計方法
JP2004079694A (ja) * 2002-08-14 2004-03-11 Fujitsu Ltd スタンダードセル
JP5130596B2 (ja) * 2007-05-30 2013-01-30 国立大学法人東北大学 半導体装置
JP2009037115A (ja) * 2007-08-03 2009-02-19 Sony Corp 半導体装置およびその製造方法、並びに表示装置
US8188537B2 (en) * 2008-01-29 2012-05-29 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113661A (ja) 1984-06-29 1986-01-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JP2003179160A (ja) 2001-10-18 2003-06-27 Chartered Semiconductor Mfg Ltd 縦形デバイスの集積化を用いて自己整合性ｃｍｏｓインバータを形成する方法

Also Published As

Publication number Publication date
US7919990B2 (en) 2011-04-05
CN101803023B (zh) 2012-05-23
EP2175489A4 (en) 2012-08-22
TW200908292A (en) 2009-02-16
KR20100059829A (ko) 2010-06-04
EP2175489B1 (en) 2013-07-24
US20100194438A1 (en) 2010-08-05
EP2175489A1 (en) 2010-04-14
CN101803023A (zh) 2010-08-11
JP5122212B2 (ja) 2013-01-16
TWI443806B (zh) 2014-07-01
WO2009016880A1 (ja) 2009-02-05
JP2009038226A (ja) 2009-02-19

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