JP5112281B2 - 成膜用基板 - Google Patents

成膜用基板 Download PDF

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Publication number
JP5112281B2
JP5112281B2 JP2008329271A JP2008329271A JP5112281B2 JP 5112281 B2 JP5112281 B2 JP 5112281B2 JP 2008329271 A JP2008329271 A JP 2008329271A JP 2008329271 A JP2008329271 A JP 2008329271A JP 5112281 B2 JP5112281 B2 JP 5112281B2
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JP
Japan
Prior art keywords
layer
light
substrate
film
functional film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2008329271A
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English (en)
Japanese (ja)
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JP2009212078A5 (enExample
JP2009212078A (ja
Inventor
浩平 横山
隆広 井辺
卓也 鶴目
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008329271A priority Critical patent/JP5112281B2/ja
Publication of JP2009212078A publication Critical patent/JP2009212078A/ja
Publication of JP2009212078A5 publication Critical patent/JP2009212078A5/ja
Application granted granted Critical
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2008329271A 2007-12-28 2008-12-25 成膜用基板 Expired - Fee Related JP5112281B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008329271A JP5112281B2 (ja) 2007-12-28 2008-12-25 成膜用基板

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2007338575 2007-12-28
JP2007338575 2007-12-28
JP2008026119 2008-02-06
JP2008026119 2008-02-06
JP2008329271A JP5112281B2 (ja) 2007-12-28 2008-12-25 成膜用基板

Publications (3)

Publication Number Publication Date
JP2009212078A JP2009212078A (ja) 2009-09-17
JP2009212078A5 JP2009212078A5 (enExample) 2012-01-19
JP5112281B2 true JP5112281B2 (ja) 2013-01-09

Family

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Family Applications (1)

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JP2008329271A Expired - Fee Related JP5112281B2 (ja) 2007-12-28 2008-12-25 成膜用基板

Country Status (4)

Country Link
US (2) US8080811B2 (enExample)
JP (1) JP5112281B2 (enExample)
CN (1) CN101471423B (enExample)
TW (1) TWI481733B (enExample)

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TWI720697B (zh) 2012-08-03 2021-03-01 日商半導體能源研究所股份有限公司 發光元件
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KR20150056112A (ko) * 2013-11-14 2015-05-26 삼성디스플레이 주식회사 막 형성용 마스크, 이를 이용한 막 형성 방법 및 유기 발광 표시 장치의 제조 방법
CN104104755B (zh) * 2014-06-25 2017-04-05 京东方科技集团股份有限公司 手机套
KR102144855B1 (ko) * 2014-09-03 2020-08-18 삼성디스플레이 주식회사 광학 마스크
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KR101706752B1 (ko) * 2015-02-17 2017-02-27 서울대학교산학협력단 호스트, 인광 도펀트 및 형광 도펀트를 포함하는 유기발광소자
TWI749726B (zh) 2015-03-09 2021-12-11 日商半導體能源研究所股份有限公司 發光元件、顯示裝置、電子裝置及照明設備
CN106910844B (zh) * 2015-12-22 2019-03-26 昆山工研院新型平板显示技术中心有限公司 Tft基板的蒸镀方法
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KR102180071B1 (ko) 2017-10-31 2020-11-17 엘지디스플레이 주식회사 초미세 패턴 증착장치, 이를 이용한 초미세 패턴 증착방법 그리고 초미세 패턴 증착방법에 의해 제작된 전계발광표시장치
CN110431251A (zh) * 2017-12-14 2019-11-08 京东方科技集团股份有限公司 用于将沉积材料沉积在受体基板上的供体基板、用于沉积沉积材料的方法、以及制造供体基板的方法
CN109962149B (zh) * 2017-12-14 2020-10-27 Tcl科技集团股份有限公司 一种封装薄膜及其制备方法、光电器件
DE112019001181T5 (de) 2018-03-07 2020-12-10 Semiconductor Energy Laboratory Co., Ltd. Licht emittierendes Element, Anzeigevorrichtung, elektronisches Gerät, organische Verbindung und Beleuchtungsvorrichtung
WO2020161556A1 (ja) 2019-02-06 2020-08-13 株式会社半導体エネルギー研究所 発光デバイス、発光機器、表示装置、電子機器及び照明装置
WO2020217129A1 (ja) 2019-04-25 2020-10-29 株式会社半導体エネルギー研究所 発光デバイス、発光装置、電子機器、および照明装置
CN110148678A (zh) * 2019-04-29 2019-08-20 深圳市华星光电半导体显示技术有限公司 辅助电极转移结构及显示面板的制作方法
CN111474607A (zh) * 2020-04-21 2020-07-31 Tcl华星光电技术有限公司 一种用于降低反射率的涂层、显示面板及显示装置

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Also Published As

Publication number Publication date
CN101471423A (zh) 2009-07-01
US8435811B2 (en) 2013-05-07
US8080811B2 (en) 2011-12-20
US20090166563A1 (en) 2009-07-02
TWI481733B (zh) 2015-04-21
TW200946700A (en) 2009-11-16
US20120088324A1 (en) 2012-04-12
JP2009212078A (ja) 2009-09-17
CN101471423B (zh) 2012-12-26

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