JP5110888B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5110888B2
JP5110888B2 JP2007014461A JP2007014461A JP5110888B2 JP 5110888 B2 JP5110888 B2 JP 5110888B2 JP 2007014461 A JP2007014461 A JP 2007014461A JP 2007014461 A JP2007014461 A JP 2007014461A JP 5110888 B2 JP5110888 B2 JP 5110888B2
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insulating layer
layer
semiconductor
semiconductor layer
film
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JP2007014461A
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Japanese (ja)
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JP2008182055A (ja
JP2008182055A5 (enExample
Inventor
舜平 山崎
郁子 川俣
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2007014461A 2007-01-25 2007-01-25 半導体装置の作製方法 Expired - Fee Related JP5110888B2 (ja)

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JP2007014461A JP5110888B2 (ja) 2007-01-25 2007-01-25 半導体装置の作製方法

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JP2007014461A JP5110888B2 (ja) 2007-01-25 2007-01-25 半導体装置の作製方法

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JP2008182055A JP2008182055A (ja) 2008-08-07
JP2008182055A5 JP2008182055A5 (enExample) 2010-02-18
JP5110888B2 true JP5110888B2 (ja) 2012-12-26

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JP2007014461A Expired - Fee Related JP5110888B2 (ja) 2007-01-25 2007-01-25 半導体装置の作製方法

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI606490B (zh) * 2010-07-02 2017-11-21 半導體能源研究所股份有限公司 半導體膜的製造方法，半導體裝置的製造方法，和光電轉換裝置的製造方法
JP2012209543A (ja) * 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd 半導体装置
US20120298998A1 (en) * 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
TWI569446B (zh) * 2011-12-23 2017-02-01 半導體能源研究所股份有限公司 半導體元件、半導體元件的製造方法、及包含半導體元件的半導體裝置
TWI613824B (zh) * 2011-12-23 2018-02-01 半導體能源研究所股份有限公司 半導體裝置
KR102103913B1 (ko) * 2012-01-10 2020-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US9653614B2 (en) * 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2015195327A (ja) * 2013-06-05 2015-11-05 株式会社半導体エネルギー研究所 半導体装置
TW201523877A (zh) * 2013-11-29 2015-06-16 Semiconductor Energy Lab 半導體裝置、半導體裝置的製造方法以及顯示裝置
CN114944827B (zh) * 2022-06-09 2023-05-26 中国电子科技集团公司第二十九研究所 一种折叠线圈及分布式放大器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04271176A (ja) * 1991-02-27 1992-09-28 Fujitsu Ltd 半導体装置の製造方法
JP2761496B2 (ja) * 1992-02-25 1998-06-04 株式会社 半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置およびその作製方法
JPH06268224A (ja) * 1993-03-12 1994-09-22 Mitsubishi Electric Corp 電界効果型トランジスタを含む半導体装置
JPH06275832A (ja) * 1993-03-18 1994-09-30 Toshiba Corp 薄膜トランジスタおよびその製造方法
JPH08330599A (ja) * 1994-11-29 1996-12-13 Sanyo Electric Co Ltd 薄膜トランジスタ、その製造方法及び表示装置
JPH08316487A (ja) * 1995-05-17 1996-11-29 Sanyo Electric Co Ltd 薄膜半導体装置の製造方法
JP4437352B2 (ja) * 2000-02-29 2010-03-24 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP2003069025A (ja) * 2001-08-22 2003-03-07 Nec Corp 半導体装置及びその実装方法
JP2003298059A (ja) * 2002-03-29 2003-10-17 Advanced Lcd Technologies Development Center Co Ltd 薄膜トランジスタ
JP2006269493A (ja) * 2005-03-22 2006-10-05 Seiko Epson Corp 半導体装置の製造方法
JP2006339326A (ja) * 2005-06-01 2006-12-14 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法

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