JP5087818B2 - 電界効果トランジスタ - Google Patents

電界効果トランジスタ Download PDF

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Publication number
JP5087818B2
JP5087818B2 JP2005088909A JP2005088909A JP5087818B2 JP 5087818 B2 JP5087818 B2 JP 5087818B2 JP 2005088909 A JP2005088909 A JP 2005088909A JP 2005088909 A JP2005088909 A JP 2005088909A JP 5087818 B2 JP5087818 B2 JP 5087818B2
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JP
Japan
Prior art keywords
layer
electrode
gate electrode
effect transistor
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005088909A
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English (en)
Japanese (ja)
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JP2006269939A5 (https=
JP2006269939A (ja
Inventor
志郎 赤松
雄治 大巻
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Nichia Corp
Original Assignee
Nichia Corp
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Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2005088909A priority Critical patent/JP5087818B2/ja
Priority to US11/387,847 priority patent/US7339206B2/en
Priority to EP06111709.9A priority patent/EP1705714B1/en
Publication of JP2006269939A publication Critical patent/JP2006269939A/ja
Priority to US11/970,357 priority patent/US7560752B2/en
Publication of JP2006269939A5 publication Critical patent/JP2006269939A5/ja
Application granted granted Critical
Publication of JP5087818B2 publication Critical patent/JP5087818B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/477—Vertical HEMTs or vertical HHMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
JP2005088909A 2005-03-25 2005-03-25 電界効果トランジスタ Expired - Fee Related JP5087818B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005088909A JP5087818B2 (ja) 2005-03-25 2005-03-25 電界効果トランジスタ
US11/387,847 US7339206B2 (en) 2005-03-25 2006-03-24 Field effect transistor including a group III-V compound semiconductor layer
EP06111709.9A EP1705714B1 (en) 2005-03-25 2006-03-24 Field effect transistor and method of manufacturing the same
US11/970,357 US7560752B2 (en) 2005-03-25 2008-01-07 Field effect transistor including two group III-V compound semiconductor layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005088909A JP5087818B2 (ja) 2005-03-25 2005-03-25 電界効果トランジスタ

Publications (3)

Publication Number Publication Date
JP2006269939A JP2006269939A (ja) 2006-10-05
JP2006269939A5 JP2006269939A5 (https=) 2008-05-08
JP5087818B2 true JP5087818B2 (ja) 2012-12-05

Family

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Family Applications (1)

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JP2005088909A Expired - Fee Related JP5087818B2 (ja) 2005-03-25 2005-03-25 電界効果トランジスタ

Country Status (3)

Country Link
US (2) US7339206B2 (https=)
EP (1) EP1705714B1 (https=)
JP (1) JP5087818B2 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7408399B2 (en) * 2005-06-27 2008-08-05 International Rectifier Corporation Active driving of normally on, normally off cascoded configuration devices through asymmetrical CMOS
JP2008227074A (ja) * 2007-03-12 2008-09-25 Rohm Co Ltd 窒化物半導体素子の製造方法および窒化物半導体素子
JP2008306130A (ja) * 2007-06-11 2008-12-18 Sanken Electric Co Ltd 電界効果型半導体装置及びその製造方法
US7915643B2 (en) * 2007-09-17 2011-03-29 Transphorm Inc. Enhancement mode gallium nitride power devices
JP5737948B2 (ja) * 2008-12-26 2015-06-17 ルネサスエレクトロニクス株式会社 ヘテロ接合電界効果トランジスタ、ヘテロ接合電界トランジスタの製造方法、および電子装置
WO2010100709A1 (ja) * 2009-03-02 2010-09-10 トヨタ自動車株式会社 窒化物半導体装置とその製造方法
KR101030013B1 (ko) * 2009-08-26 2011-04-20 삼성에스디아이 주식회사 염료감응 태양전지
WO2011066862A1 (en) * 2009-12-03 2011-06-09 Epcos Ag Bipolar transistor with lateral emitter and collector and method of production
US20110147796A1 (en) 2009-12-17 2011-06-23 Infineon Technologies Austria Ag Semiconductor device with metal carrier and manufacturing method
KR101774933B1 (ko) * 2010-03-02 2017-09-06 삼성전자 주식회사 듀얼 디플리션을 나타내는 고 전자 이동도 트랜지스터 및 그 제조방법
US8319256B2 (en) 2010-06-23 2012-11-27 Power Integrations, Inc. Layout design for a high power, GaN-based FET
JP5678517B2 (ja) 2010-08-23 2015-03-04 富士通株式会社 半導体装置及びその製造方法
KR20120027987A (ko) 2010-09-14 2012-03-22 삼성엘이디 주식회사 질화갈륨계 반도체소자 및 그 제조방법
KR101929834B1 (ko) * 2011-07-25 2018-12-18 삼성디스플레이 주식회사 박막 트랜지스터 기판, 이를 갖는 액정 표시 장치, 및 박막 트랜지스터 기판의 제조 방법
JP5751074B2 (ja) * 2011-08-01 2015-07-22 富士通株式会社 半導体装置及び半導体装置の製造方法
JP5596653B2 (ja) * 2011-10-11 2014-09-24 日本電信電話株式会社 電界効果トランジスタおよびその製造方法
JP6145985B2 (ja) * 2012-10-09 2017-06-14 日亜化学工業株式会社 電界効果トランジスタ
DE102015110490A1 (de) * 2015-06-30 2017-01-05 Infineon Technologies Austria Ag Halbleiterbauelemente und ein Verfahren zum Bilden eines Halbleiterbauelements
JP6780331B2 (ja) * 2016-07-11 2020-11-04 富士電機株式会社 半導体装置の製造方法および半導体装置
CN106549038B (zh) * 2016-12-09 2019-08-02 宁波海特创电控有限公司 一种垂直结构的氮化镓异质结hemt
US11024717B2 (en) * 2018-03-22 2021-06-01 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing semiconductor device
CN112420826B (zh) * 2020-11-20 2022-09-20 成都挚信电子技术有限责任公司 垂直pHEMT晶体管结构及开关芯片
US20220375927A1 (en) * 2020-12-25 2022-11-24 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and manufacturing method thereof
CN113161239A (zh) * 2021-04-15 2021-07-23 北京工业大学 一种增强型GaN HEMT环形栅下刻蚀器件及其制备方法
JP2023033068A (ja) * 2021-08-25 2023-03-09 株式会社東芝 半導体装置
US20240178309A1 (en) * 2022-11-29 2024-05-30 Vanguard International Semiconductor Corporation Semiconductor device

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236166A (en) * 1979-07-05 1980-11-25 Bell Telephone Laboratories, Incorporated Vertical field effect transistor
FR2493604A1 (fr) * 1980-10-31 1982-05-07 Thomson Csf Transistors a effet de champ a grille ultra courte
JPS5934666A (ja) * 1982-08-20 1984-02-25 Matsushita Electronics Corp 半導体集積回路装置
FR2557368B1 (fr) * 1983-12-27 1986-04-11 Thomson Csf Transistor a effet de champ, de structure verticale submicronique, et son procede de realisation
US4712122A (en) * 1984-07-26 1987-12-08 Research Development Corp. Heterojunction gate ballistic JFET with channel thinner than Debye length
FR2600821B1 (fr) * 1986-06-30 1988-12-30 Thomson Csf Dispositif semi-conducteur a heterojonction et double canal, son application a un transistor a effet de champ, et son application a un dispositif de transductance negative
JPH0821713B2 (ja) * 1987-02-26 1996-03-04 株式会社東芝 導電変調型ｍｏｓｆｅｔ
US4839310A (en) * 1988-01-27 1989-06-13 Massachusetts Institute Of Technology High mobility transistor with opposed-gates
JPH02130934A (ja) * 1988-11-11 1990-05-18 Nec Corp ショットキー接合電界効果トランジスタ
US5234851A (en) * 1989-09-05 1993-08-10 General Electric Company Small cell, low contact assistance rugged power field effect devices and method of fabrication
US5270798A (en) * 1990-02-20 1993-12-14 Varian Associates, Inc. High electron mobility transistor
US5889298A (en) * 1993-04-30 1999-03-30 Texas Instruments Incorporated Vertical JFET field effect transistor
US5399887A (en) * 1994-05-03 1995-03-21 Motorola, Inc. Modulation doped field effect transistor
JPH0878436A (ja) * 1994-09-05 1996-03-22 Mitsubishi Electric Corp 半導体装置
US5753938A (en) * 1996-08-08 1998-05-19 North Carolina State University Static-induction transistors having heterojunction gates and methods of forming same
WO2000014809A1 (fr) * 1998-09-09 2000-03-16 Hitachi, Ltd. Transistor d'induction statique, procede de fabrication correspondant, et onduleur
EP1128443B1 (en) * 1998-10-09 2009-12-30 The Kansai Electric Power Co., Inc. Field-effect semiconductor device and fabrication method thereof
JP3237634B2 (ja) * 1998-12-07 2001-12-10 日本電気株式会社 電界効果トランジスタ
JP2000252456A (ja) * 1999-03-02 2000-09-14 Hitachi Ltd 半導体装置並びにそれを用いた電力変換器
JP2000277724A (ja) * 1999-03-26 2000-10-06 Nagoya Kogyo Univ 電界効果トランジスタとそれを備えた半導体装置及びその製造方法
JP2001077353A (ja) * 1999-06-30 2001-03-23 Toshiba Corp 高電子移動度トランジスタ及び電力増幅器
US6396085B1 (en) * 2000-04-25 2002-05-28 The Furukawa Electric Co., Ltd GaN-type semiconductor vertical field effect transistor
DE10023115A1 (de) * 2000-05-11 2001-11-29 Infineon Technologies Ag Halbleiter-Leistungsbauelement mit reduziertem parasitärem Bipolartransistor
US7126169B2 (en) * 2000-10-23 2006-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor element
JP3785970B2 (ja) * 2001-09-03 2006-06-14 日本電気株式会社 Ｉｉｉ族窒化物半導体素子の製造方法
JP2003197645A (ja) * 2001-12-26 2003-07-11 Oki Electric Ind Co Ltd ヘテロ接合電界効果トランジスタ及びその製造方法
JP2003273130A (ja) * 2002-03-15 2003-09-26 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6855970B2 (en) * 2002-03-25 2005-02-15 Kabushiki Kaisha Toshiba High-breakdown-voltage semiconductor device
JP3859066B2 (ja) 2002-04-02 2006-12-20 日本電信電話株式会社 半導体装置およびそれを用いた半導体回路
JP3661664B2 (ja) * 2002-04-24 2005-06-15 日産自動車株式会社 炭化珪素半導体装置及びその製造方法
JP4457564B2 (ja) * 2002-04-26 2010-04-28 沖電気工業株式会社 半導体装置の製造方法
US7217950B2 (en) * 2002-10-11 2007-05-15 Nissan Motor Co., Ltd. Insulated gate tunnel-injection device having heterojunction and method for manufacturing the same
JP4645034B2 (ja) * 2003-02-06 2011-03-09 株式会社豊田中央研究所 Ｉｉｉ族窒化物半導体を有する半導体素子
JP4492034B2 (ja) 2003-04-11 2010-06-30 日亜化学工業株式会社 Ｈｅｍｔ及びその製造方法
JP2005011846A (ja) * 2003-06-16 2005-01-13 Nissan Motor Co Ltd 半導体装置
US20050012143A1 (en) * 2003-06-24 2005-01-20 Hideaki Tanaka Semiconductor device and method of manufacturing the same
JP4155888B2 (ja) * 2003-07-09 2008-09-24 シャープ株式会社 環状型ゲート電極を備えたトランジスタ
EP1519419B1 (en) * 2003-09-24 2018-02-21 Nissan Motor Co., Ltd. Semiconductor device and manufacturing method thereof
JP4066946B2 (ja) * 2003-12-18 2008-03-26 日産自動車株式会社 半導体装置
JP4039376B2 (ja) * 2004-03-09 2008-01-30 日産自動車株式会社 半導体装置
US7084441B2 (en) * 2004-05-20 2006-08-01 Cree, Inc. Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
JP4650224B2 (ja) * 2004-11-19 2011-03-16 日亜化学工業株式会社 電界効果トランジスタ

Also Published As

Publication number Publication date
US20060231861A1 (en) 2006-10-19
US7339206B2 (en) 2008-03-04
JP2006269939A (ja) 2006-10-05
US7560752B2 (en) 2009-07-14
EP1705714B1 (en) 2016-05-04
EP1705714A2 (en) 2006-09-27
US20080135854A1 (en) 2008-06-12
EP1705714A3 (en) 2009-09-30

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