JP5081151B2 - スルホニウム塩開始剤 - Google Patents

スルホニウム塩開始剤 Download PDF

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Publication number
JP5081151B2
JP5081151B2 JP2008518789A JP2008518789A JP5081151B2 JP 5081151 B2 JP5081151 B2 JP 5081151B2 JP 2008518789 A JP2008518789 A JP 2008518789A JP 2008518789 A JP2008518789 A JP 2008518789A JP 5081151 B2 JP5081151 B2 JP 5081151B2
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JP
Japan
Prior art keywords
alkyl
acid
group
compounds
phenyl
Prior art date
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Active
Application number
JP2008518789A
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English (en)
Japanese (ja)
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JP2009501148A (ja
JP2009501148A5 (OSRAM
Inventor
ヴォルフ，ジャン−ピエール
ラティカ，アッティラ
ビルボーム，ジャン−リュク
イルク，シュテファン
ハヨ，パスカル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF Schweiz AG
Original Assignee
Ciba Holding AG
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Publication date
Application filed by Ciba Holding AG filed Critical Ciba Holding AG
Publication of JP2009501148A publication Critical patent/JP2009501148A/ja
Publication of JP2009501148A5 publication Critical patent/JP2009501148A5/ja
Application granted granted Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/06—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/56—Ring systems containing three or more rings
    • C07D209/80—[b, c]- or [b, d]-condensed
    • C07D209/82—Carbazoles; Hydrogenated carbazoles
    • C07D209/88—Carbazoles; Hydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Paints Or Removers (AREA)
  • Polymerisation Methods In General (AREA)
JP2008518789A 2005-07-01 2006-06-21 スルホニウム塩開始剤 Active JP5081151B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP05105991 2005-07-01
EP05105991.3 2005-07-01
PCT/EP2006/063378 WO2007003507A1 (en) 2005-07-01 2006-06-21 Sulphonium salt initiators

Publications (3)

Publication Number Publication Date
JP2009501148A JP2009501148A (ja) 2009-01-15
JP2009501148A5 JP2009501148A5 (OSRAM) 2009-08-06
JP5081151B2 true JP5081151B2 (ja) 2012-11-21

Family

ID=35453417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008518789A Active JP5081151B2 (ja) 2005-07-01 2006-06-21 スルホニウム塩開始剤

Country Status (9)

Country Link
US (1) US7901867B2 (OSRAM)
EP (1) EP1902019B1 (OSRAM)
JP (1) JP5081151B2 (OSRAM)
KR (1) KR101334046B1 (OSRAM)
CN (1) CN101213169A (OSRAM)
AT (1) ATE473209T1 (OSRAM)
DE (1) DE602006015319D1 (OSRAM)
TW (1) TW200710074A (OSRAM)
WO (1) WO2007003507A1 (OSRAM)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4866606B2 (ja) * 2005-12-28 2012-02-01 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4695996B2 (ja) * 2006-02-27 2011-06-08 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
EP2125713B1 (en) 2006-10-04 2012-04-18 Basf Se Sulphonium salt photoinitiators
EP2186799B1 (en) * 2007-08-07 2015-07-08 Adeka Corporation Aromatic sulfonium salt compound
JP5570424B2 (ja) * 2007-10-10 2014-08-13 ビーエーエスエフ ソシエタス・ヨーロピア スルホニウム塩開始剤
EP2197839B1 (en) * 2007-10-10 2013-01-02 Basf Se Sulphonium salt initiators
JP5473921B2 (ja) 2007-10-10 2014-04-16 ビーエーエスエフ ソシエタス・ヨーロピア スルホニウム塩開始剤
CN102056913A (zh) * 2008-06-12 2011-05-11 巴斯夫欧洲公司 锍衍生物及其作为潜酸的用途
JP5385017B2 (ja) * 2008-07-11 2014-01-08 信越化学工業株式会社 レジストパターン形成方法及びフォトマスクの製造方法
US9005871B2 (en) 2008-10-20 2015-04-14 Basf Se Sulfonium derivatives and the use therof as latent acids
CA2748691A1 (en) * 2008-12-12 2010-06-17 Lutz Lehmann Triaryl-sulphonium compounds, kit and methods for labeling positron emitting isotopes
EP2199856B1 (en) 2008-12-18 2013-08-07 Agfa Graphics N.V. Cationic radiation curable compositions
JP5576139B2 (ja) * 2009-02-20 2014-08-20 サンアプロ株式会社 スルホニウム塩，光酸発生剤，光硬化性組成物，及びその硬化体
KR101700980B1 (ko) * 2009-02-20 2017-01-31 산아프로 가부시키가이샤 술포늄염, 광산 발생제 및 감광성 수지 조성물
JP5448157B2 (ja) * 2009-03-13 2014-03-19 株式会社Ａｄｅｋａ 芳香族スルホニウム塩化合物
JP5491913B2 (ja) * 2009-03-18 2014-05-14 サンアプロ株式会社 化学増幅型ポジ型フォトレジスト組成物及びレジストパターンの製造方法
CN102471255B (zh) * 2009-10-26 2015-06-03 株式会社艾迪科 芳香族锍盐化合物
JP5543757B2 (ja) * 2009-11-11 2014-07-09 サンアプロ株式会社 スルホニウム塩，光酸発生剤，硬化性組成物及びポジ型フォトレジスト組成物
US9382352B2 (en) 2009-11-12 2016-07-05 Ndsu Research Foundation Polymers derived from plant oil
WO2011060293A1 (en) * 2009-11-12 2011-05-19 Ndsu Research Foundation Polymers derived from plant oil
KR101833078B1 (ko) 2009-12-17 2018-02-27 디에스엠 아이피 어셋츠 비.브이. 적층식 제작을 위한 발광 다이오드 경화성 액체 수지 조성물
JP5866686B2 (ja) 2010-01-22 2016-02-17 ディーエスエム アイピー アセッツ ビー．ブイ． 選択的視覚効果を有して層状に硬化可能な液状放射線硬化性樹脂およびその使用方法
US8871423B2 (en) * 2010-01-29 2014-10-28 Samsung Electronics Co., Ltd. Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same
CA2794795C (en) * 2010-03-30 2020-05-19 Surmodics, Inc. Degradable photo-crosslinker
US10315987B2 (en) 2010-12-13 2019-06-11 Surmodics, Inc. Photo-crosslinker
JP5787720B2 (ja) * 2010-12-16 2015-09-30 キヤノン株式会社 感光性ネガ型樹脂組成物
KR101229312B1 (ko) * 2011-01-03 2013-02-04 금호석유화학 주식회사 술포늄 화합물, 광산발생제 및 이의 제조방법
US8816211B2 (en) * 2011-02-14 2014-08-26 Eastman Kodak Company Articles with photocurable and photocured compositions
EP2502728B1 (en) 2011-03-23 2017-01-04 DSM IP Assets B.V. Lightweight and high strength three-dimensional articles producible by additive fabrication processes
EP2850120A4 (en) 2012-05-18 2016-02-10 Ndsu Res Foundation FUNCTIONALIZED AMPHIPHILE POLYMERS ON PLANT BASIS
US9631040B2 (en) 2012-05-18 2017-04-25 Ndsu Research Foundation Functionalized amphiphilic plant-based polymers
JP5899068B2 (ja) * 2012-06-28 2016-04-06 東京応化工業株式会社 厚膜用ポジ型レジスト組成物、厚膜レジストパターンの製造方法、接続端子の製造方法
TWI498675B (zh) * 2012-09-15 2015-09-01 羅門哈斯電子材料有限公司 酸產生劑化合物及含該化合物之光阻劑
TWI545118B (zh) * 2012-09-15 2016-08-11 羅門哈斯電子材料有限公司 酸產生劑化合物及包含該化合物之光阻劑
KR102047349B1 (ko) * 2012-12-07 2019-11-21 디에스피 고쿄 후도 ＆ 케미카루 가부시키가이샤 신규한 술포늄염 화합물, 그 제조 방법 및 광산발생제
US9834626B2 (en) 2013-01-15 2017-12-05 Ndsu Research Foundation Plant oil-based materials
CN103642383B (zh) * 2013-12-04 2016-04-20 江南大学 一种本征型光固化抗静电树脂的制备方法
CN106458879A (zh) * 2014-05-13 2017-02-22 东洋合成工业株式会社 鎓盐、光酸产生剂、感光性树脂组合物及装置的制造方法
JP6583136B2 (ja) * 2016-05-11 2019-10-02 信越化学工業株式会社 新規スルホニウム化合物及びその製造方法、レジスト組成物、並びにパターン形成方法
US10416558B2 (en) * 2016-08-05 2019-09-17 Shin-Etsu Chemical Co., Ltd. Positive resist composition, resist pattern forming process, and photomask blank
JP6561937B2 (ja) * 2016-08-05 2019-08-21 信越化学工業株式会社 ネガ型レジスト組成物及びレジストパターン形成方法
CN107698477B (zh) 2016-08-08 2020-05-12 常州强力电子新材料股份有限公司 一种新型阳离子型光引发剂及其制备方法和应用
CN109456242B (zh) 2017-09-06 2021-02-12 常州强力电子新材料股份有限公司 硫鎓盐光引发剂、其制备方法、包含其的光固化组合物及其应用
WO2019212353A1 (en) 2018-05-03 2019-11-07 Dsm Ip Assets B.V. Methods of post-processing photofabricated articles created via additive fabrication
JP7499071B2 (ja) * 2019-06-04 2024-06-13 住友化学株式会社 塩、クエンチャー、レジスト組成物及びレジストパターンの製造方法並びに塩の製造方法
EP4122915A4 (en) * 2020-03-17 2023-09-06 San-Apro Ltd. Sulfonium salt, photoacid generator, curable composition, and resist composition

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ZA805273B (en) * 1979-09-28 1981-11-25 Gen Electric Process of deep section curing photocurable compositions
JPH107649A (ja) * 1996-06-18 1998-01-13 Nippon Kayaku Co Ltd 光重合開始剤、これを含有するエネルギー線硬化性組成物及びその硬化物
KR100279497B1 (ko) * 1998-07-16 2001-02-01 박찬구 술포늄 염의 제조방법
TWI250379B (en) 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
JP3476374B2 (ja) * 1998-10-09 2003-12-10 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
US6723483B1 (en) * 1999-12-27 2004-04-20 Wako Pure Chemical Industries, Ltd. Sulfonium salt compounds
JP3972568B2 (ja) * 2000-05-09 2007-09-05 住友化学株式会社 化学増幅型ポジ型レジスト組成物及びスルホニウム塩
JP4177952B2 (ja) * 2000-05-22 2008-11-05 富士フイルム株式会社 ポジ型レジスト組成物
TWI286664B (en) * 2000-06-23 2007-09-11 Sumitomo Chemical Co Chemical amplification type positive resist composition and sulfonium salt
US6749987B2 (en) * 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP4150509B2 (ja) * 2000-11-20 2008-09-17 富士フイルム株式会社 ポジ型感光性組成物
JP4262402B2 (ja) * 2000-10-20 2009-05-13 富士フイルム株式会社 ポジ型レジスト組成物
JP2002202605A (ja) * 2000-12-28 2002-07-19 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
BR0205767B1 (pt) * 2001-07-19 2013-10-15 Sais de sulfônio, composições curáveis por radiação, formulações líquidas, e, método para a preparação dos sais de sulfônio
JP2003255542A (ja) * 2002-03-04 2003-09-10 Fuji Photo Film Co Ltd ポジ型感光性組成物
GB0204467D0 (en) 2002-02-26 2002-04-10 Coates Brothers Plc Novel fused ring compounds, and their use as cationic photoinitiators
WO2004002955A2 (en) 2002-06-26 2004-01-08 Arch Specialty Chemicals, Inc. Photosensitive compositions
EP1557413B1 (en) * 2002-09-25 2012-08-01 Adeka Corporation Novel aromatic sulfonium salt compound, photo-acid generator comprising the same and photopolymerizable composition containing the same, resin composition for optical three-dimensional shaping, and method of optically forming three-dimensional shape
JP4253486B2 (ja) * 2002-09-25 2009-04-15 富士フイルム株式会社 ポジ型又はネガ型レジスト組成物、酸発生剤及びパターン形成方法
JP4115309B2 (ja) * 2003-03-24 2008-07-09 富士フイルム株式会社 ポジ型レジスト組成物
JP4399192B2 (ja) * 2003-06-03 2010-01-13 富士フイルム株式会社 感光性組成物

Also Published As

Publication number Publication date
TW200710074A (en) 2007-03-16
EP1902019A1 (en) 2008-03-26
CN101213169A (zh) 2008-07-02
JP2009501148A (ja) 2009-01-15
DE602006015319D1 (de) 2010-08-19
WO2007003507A1 (en) 2007-01-11
KR101334046B1 (ko) 2013-12-02
KR20080030082A (ko) 2008-04-03
US20090208872A1 (en) 2009-08-20
EP1902019B1 (en) 2010-07-07
ATE473209T1 (de) 2010-07-15
US7901867B2 (en) 2011-03-08

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