ATE473209T1 - Sulfoniumsalzinitiatoren - Google Patents

Sulfoniumsalzinitiatoren

Info

Publication number
ATE473209T1
ATE473209T1 AT06777379T AT06777379T ATE473209T1 AT E473209 T1 ATE473209 T1 AT E473209T1 AT 06777379 T AT06777379 T AT 06777379T AT 06777379 T AT06777379 T AT 06777379T AT E473209 T1 ATE473209 T1 AT E473209T1
Authority
AT
Austria
Prior art keywords
c20alkyl
phenanthryl
anthryl
naphthyl
biphenylyl
Prior art date
Application number
AT06777379T
Other languages
German (de)
English (en)
Inventor
Jean-Pierre Wolf
Attila Latika
Jean-Luc Birbaum
Stephan Ilg
Pascal Hayoz
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Application granted granted Critical
Publication of ATE473209T1 publication Critical patent/ATE473209T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01Sulfonic acids
    • C07C309/02Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/06Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D209/00Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/56Ring systems containing three or more rings
    • C07D209/80[b, c]- or [b, d]-condensed
    • C07D209/82Carbazoles; Hydrogenated carbazoles
    • C07D209/88Carbazoles; Hydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12Sulfonium compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0047Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/122Sulfur compound containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Paints Or Removers (AREA)
  • Polymerisation Methods In General (AREA)
AT06777379T 2005-07-01 2006-06-21 Sulfoniumsalzinitiatoren ATE473209T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05105991 2005-07-01
PCT/EP2006/063378 WO2007003507A1 (en) 2005-07-01 2006-06-21 Sulphonium salt initiators

Publications (1)

Publication Number Publication Date
ATE473209T1 true ATE473209T1 (de) 2010-07-15

Family

ID=35453417

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06777379T ATE473209T1 (de) 2005-07-01 2006-06-21 Sulfoniumsalzinitiatoren

Country Status (9)

Country Link
US (1) US7901867B2 (OSRAM)
EP (1) EP1902019B1 (OSRAM)
JP (1) JP5081151B2 (OSRAM)
KR (1) KR101334046B1 (OSRAM)
CN (1) CN101213169A (OSRAM)
AT (1) ATE473209T1 (OSRAM)
DE (1) DE602006015319D1 (OSRAM)
TW (1) TW200710074A (OSRAM)
WO (1) WO2007003507A1 (OSRAM)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4866606B2 (ja) * 2005-12-28 2012-02-01 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4695996B2 (ja) * 2006-02-27 2011-06-08 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
US8012672B2 (en) 2006-10-04 2011-09-06 Basf Se Sulphonium salt photoinitiators
CN101778818B (zh) * 2007-08-07 2014-01-08 株式会社Adeka 芳香族硫鎓盐化合物
WO2009047105A1 (en) * 2007-10-10 2009-04-16 Basf Se Sulphonium salt initiators
WO2009047151A1 (en) 2007-10-10 2009-04-16 Basf Se Sulphonium salt initiators
CN102026967B (zh) * 2007-10-10 2013-09-18 巴斯夫欧洲公司 锍盐引发剂
EP2288599A1 (en) * 2008-06-12 2011-03-02 Basf Se Sulfonium derivatives and the use thereof as latent acids
JP5385017B2 (ja) * 2008-07-11 2014-01-08 信越化学工業株式会社 レジストパターン形成方法及びフォトマスクの製造方法
WO2010046240A1 (en) 2008-10-20 2010-04-29 Basf Se Sulfonium derivatives and the use therof as latent acids
US20120020881A1 (en) * 2008-12-12 2012-01-26 Bayer Schering Pharma Aktiengesellschaft Triaryl-sulphonium compounds, kit and methods for labeling positron emitting isotopes
EP2199856B1 (en) 2008-12-18 2013-08-07 Agfa Graphics N.V. Cationic radiation curable compositions
JP5576139B2 (ja) * 2009-02-20 2014-08-20 サンアプロ株式会社 スルホニウム塩,光酸発生剤,光硬化性組成物,及びその硬化体
KR101700980B1 (ko) * 2009-02-20 2017-01-31 산아프로 가부시키가이샤 술포늄염, 광산 발생제 및 감광성 수지 조성물
JP5448157B2 (ja) * 2009-03-13 2014-03-19 株式会社Adeka 芳香族スルホニウム塩化合物
JP5491913B2 (ja) * 2009-03-18 2014-05-14 サンアプロ株式会社 化学増幅型ポジ型フォトレジスト組成物及びレジストパターンの製造方法
JP5635526B2 (ja) * 2009-10-26 2014-12-03 株式会社Adeka 芳香族スルホニウム塩化合物
JP5543757B2 (ja) * 2009-11-11 2014-07-09 サンアプロ株式会社 スルホニウム塩,光酸発生剤,硬化性組成物及びポジ型フォトレジスト組成物
US9382352B2 (en) 2009-11-12 2016-07-05 Ndsu Research Foundation Polymers derived from plant oil
EP2499171A4 (en) * 2009-11-12 2014-06-18 Ndsu Res Foundation POLYMERS FROM A VEGETABLE OIL
WO2011075555A1 (en) 2009-12-17 2011-06-23 Dsm Ip Assets, B.V. Led curable liquid resin compositions for additive fabrication
AU2011207304B2 (en) 2010-01-22 2014-07-17 Stratasys, Inc. Liquid radiation curable resins capable of curing into layers with selective visual effects and methods for the use thereof
US8871423B2 (en) * 2010-01-29 2014-10-28 Samsung Electronics Co., Ltd. Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same
EP2552927B1 (en) 2010-03-30 2019-03-13 SurModics, Inc. Degradable photo-crosslinkers
US10315987B2 (en) 2010-12-13 2019-06-11 Surmodics, Inc. Photo-crosslinker
JP5787720B2 (ja) 2010-12-16 2015-09-30 キヤノン株式会社 感光性ネガ型樹脂組成物
KR101229312B1 (ko) * 2011-01-03 2013-02-04 금호석유화학 주식회사 술포늄 화합물, 광산발생제 및 이의 제조방법
US8816211B2 (en) * 2011-02-14 2014-08-26 Eastman Kodak Company Articles with photocurable and photocured compositions
EP2502728B1 (en) 2011-03-23 2017-01-04 DSM IP Assets B.V. Lightweight and high strength three-dimensional articles producible by additive fabrication processes
US9487420B2 (en) 2012-05-18 2016-11-08 Ndsu Research Foundation Vegetable oil-based polymers for nanoparticle surface modification
US9631040B2 (en) 2012-05-18 2017-04-25 Ndsu Research Foundation Functionalized amphiphilic plant-based polymers
JP5899068B2 (ja) * 2012-06-28 2016-04-06 東京応化工業株式会社 厚膜用ポジ型レジスト組成物、厚膜レジストパターンの製造方法、接続端子の製造方法
JP5739497B2 (ja) * 2012-09-15 2015-06-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 酸発生剤化合物およびそれを含むフォトレジスト
JP5830503B2 (ja) * 2012-09-15 2015-12-09 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 酸発生剤化合物およびそれを含むフォトレジスト
TWI573782B (zh) * 2012-12-07 2017-03-11 Dsp五協食品&化學品股份有限公司 新穎鋶鹽化合物、其製造方法及光酸產生劑
US9834626B2 (en) 2013-01-15 2017-12-05 Ndsu Research Foundation Plant oil-based materials
CN103642383B (zh) * 2013-12-04 2016-04-20 江南大学 一种本征型光固化抗静电树脂的制备方法
WO2015174471A1 (ja) * 2014-05-13 2015-11-19 東洋合成工業株式会社 オニウム塩、光酸発生剤、感光性樹脂組成物及びデバイスの製造方法
JP6583136B2 (ja) * 2016-05-11 2019-10-02 信越化学工業株式会社 新規スルホニウム化合物及びその製造方法、レジスト組成物、並びにパターン形成方法
JP6561937B2 (ja) * 2016-08-05 2019-08-21 信越化学工業株式会社 ネガ型レジスト組成物及びレジストパターン形成方法
US10416558B2 (en) * 2016-08-05 2019-09-17 Shin-Etsu Chemical Co., Ltd. Positive resist composition, resist pattern forming process, and photomask blank
CN107698477B (zh) 2016-08-08 2020-05-12 常州强力电子新材料股份有限公司 一种新型阳离子型光引发剂及其制备方法和应用
CN109456242B (zh) 2017-09-06 2021-02-12 常州强力电子新材料股份有限公司 硫鎓盐光引发剂、其制备方法、包含其的光固化组合物及其应用
US11590706B2 (en) 2018-05-03 2023-02-28 Covestro (Netherlands) B.V. Methods of post-processing photofabricated articles created via additive fabrication
JP7499071B2 (ja) * 2019-06-04 2024-06-13 住友化学株式会社 塩、クエンチャー、レジスト組成物及びレジストパターンの製造方法並びに塩の製造方法
US12461444B2 (en) 2020-03-17 2025-11-04 San-Apro Ltd. Sulfonium salt, photoacid generator, curable composition, and resist composition

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ZA805273B (en) * 1979-09-28 1981-11-25 Gen Electric Process of deep section curing photocurable compositions
JPH107649A (ja) * 1996-06-18 1998-01-13 Nippon Kayaku Co Ltd 光重合開始剤、これを含有するエネルギー線硬化性組成物及びその硬化物
KR100279497B1 (ko) * 1998-07-16 2001-02-01 박찬구 술포늄 염의 제조방법
TWI250379B (en) * 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
JP3476374B2 (ja) * 1998-10-09 2003-12-10 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
US6723483B1 (en) * 1999-12-27 2004-04-20 Wako Pure Chemical Industries, Ltd. Sulfonium salt compounds
JP3972568B2 (ja) * 2000-05-09 2007-09-05 住友化学株式会社 化学増幅型ポジ型レジスト組成物及びスルホニウム塩
JP4177952B2 (ja) * 2000-05-22 2008-11-05 富士フイルム株式会社 ポジ型レジスト組成物
TWI286664B (en) * 2000-06-23 2007-09-11 Sumitomo Chemical Co Chemical amplification type positive resist composition and sulfonium salt
JP4150509B2 (ja) * 2000-11-20 2008-09-17 富士フイルム株式会社 ポジ型感光性組成物
JP4262402B2 (ja) * 2000-10-20 2009-05-13 富士フイルム株式会社 ポジ型レジスト組成物
US6749987B2 (en) 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP2002202605A (ja) * 2000-12-28 2002-07-19 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
ATE438638T1 (de) 2001-07-19 2009-08-15 Lamberti Spa Sulfoniumsalze als photoinitiatoren für strahlungshärtbare systeme
JP2003255542A (ja) * 2002-03-04 2003-09-10 Fuji Photo Film Co Ltd ポジ型感光性組成物
GB0204467D0 (en) * 2002-02-26 2002-04-10 Coates Brothers Plc Novel fused ring compounds, and their use as cationic photoinitiators
US6911297B2 (en) * 2002-06-26 2005-06-28 Arch Specialty Chemicals, Inc. Photoresist compositions
US7611817B2 (en) * 2002-09-25 2009-11-03 Adeka Corporation Aromatic sulfonium salt compound, photo-acid generator comprising the same and photopolymerizable composition containing the same, resin composition for optical three-dimensional shaping, and method of optically forming three-dimensional shape
JP4253486B2 (ja) * 2002-09-25 2009-04-15 富士フイルム株式会社 ポジ型又はネガ型レジスト組成物、酸発生剤及びパターン形成方法
JP4115309B2 (ja) * 2003-03-24 2008-07-09 富士フイルム株式会社 ポジ型レジスト組成物
JP4399192B2 (ja) * 2003-06-03 2010-01-13 富士フイルム株式会社 感光性組成物

Also Published As

Publication number Publication date
EP1902019A1 (en) 2008-03-26
DE602006015319D1 (de) 2010-08-19
KR20080030082A (ko) 2008-04-03
US7901867B2 (en) 2011-03-08
CN101213169A (zh) 2008-07-02
JP2009501148A (ja) 2009-01-15
KR101334046B1 (ko) 2013-12-02
JP5081151B2 (ja) 2012-11-21
US20090208872A1 (en) 2009-08-20
TW200710074A (en) 2007-03-16
WO2007003507A1 (en) 2007-01-11
EP1902019B1 (en) 2010-07-07

Similar Documents

Publication Publication Date Title
ATE473209T1 (de) Sulfoniumsalzinitiatoren
ES2495743T3 (es) Fosfaplatinos y su uso en el tratamiento de cánceres resistentes a cisplatino y carboplatino
ATE496910T1 (de) Oximesther-fotoinitiatoren
BRPI0509471A8 (pt) Lipídios, complexos de lipídio e uso dos mesmos
ATE381540T1 (de) Oximesther-fotoinitiatoren
CY1106752T1 (el) Διϋδροπτεριδινονες, μεθοδος για την παραγωγη τους και χρηση τους ως φαρμακων
DK1678119T3 (da) Fremgangsmåde til fremstilling af 2-dihalogenacyl-3-amino-acrylsyreestere og 3-dihalogenmethyl-pyrazol-4-carboxylsyreestere
EA200000327A2 (ru) Новые соединения аминотриазола, способ их получения и содержащие их фармацевтические композиции
JP2013028597A5 (OSRAM)
AR047917A1 (es) Derivados de 4-benzimidazol-2-il-piridazin-3-ona, preparacion de los mismos, y su empleo en medicamentos
JP2014043437A5 (ja) 有機化合物
EP2020617A3 (en) Resist composition containing a sulfonium compound, pattern-forming method using the resist composition, and sulfonium compound
DE60000442D1 (de) Aus beta-phosphorylierte nitroxiden abkömmige alkoxyamine, ihre verwendung fur radikal polymerisation
PE20010751A1 (es) Quinolin-2-ona como inhibidores de las proteinas resistentes a multiples farmacos
NO20022021L (no) Indeno-, nafto- og benzocyklohepta-dihydrotiazolderivater, fremstilling av de samme og deres anvendelse somanoreksilegemidler
EA200600485A1 (ru) Способ получения производных 2-оксо-1-пирролидина
AR049681A1 (es) Macrolidos preparados a partir de actinomicetos. composiciones farmaceuticas
CN104803994A (zh) 一种单组分的可见光引发剂及其制备方法
CY1107101T1 (el) Μεθοδος συνθεσης παραγωγων της 1,3-διϋδρο-2h-3-βενζαζεπιν-2-ονης και εφαρμογη στη συνθεση της ιβαβραδινης και των αλατων προσθηκης με φαρμακευτικως αποδεκτο οξυ
EA200602169A1 (ru) Способ получения производных 2-оксо-1-пирролидина внутримолекулярным аллилированием
DE602005003369D1 (de) Neue sequenz um die expression einer nukleinsäure zu erhöhen
BRPI0518958B8 (pt) método para produzir um derivado de biopterina, 1;2'-0- diacetil-l-biopterina e l-biopterina
JP2003121999A5 (OSRAM)
JP2007112769A5 (OSRAM)
DE60131176D1 (de) Fluoreszierende verbindungen

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties