JP5075310B2 - 有機ケイ酸塩層を堆積する方法 - Google Patents

有機ケイ酸塩層を堆積する方法 Download PDF

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Publication number
JP5075310B2
JP5075310B2 JP2001245703A JP2001245703A JP5075310B2 JP 5075310 B2 JP5075310 B2 JP 5075310B2 JP 2001245703 A JP2001245703 A JP 2001245703A JP 2001245703 A JP2001245703 A JP 2001245703A JP 5075310 B2 JP5075310 B2 JP 5075310B2
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JP
Japan
Prior art keywords
layer
sic
deposition chamber
organosilicate
organosilicate layer
Prior art date
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Expired - Fee Related
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JP2001245703A
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Japanese (ja)
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JP2002164347A (ja
JP2002164347A5 (cg-RX-API-DMAC10.html
Inventor
ジェラード フレデリック
シャ リー−チャン
リン ティアン−ホー
ヤー エリー
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H10P50/73—
    • H10W20/071—
    • H10W20/086—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers
    • H10P14/6336—
    • H10P14/6682—
    • H10P14/6686—
    • H10P14/69215—
    • H10P14/6922—
    • H10P14/6923—
    • H10P76/2043—
    • H10W20/084—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Architecture (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Materials For Photolithography (AREA)
JP2001245703A 2000-08-12 2001-08-13 有機ケイ酸塩層を堆積する方法 Expired - Fee Related JP5075310B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/638803 2000-08-12
US09/638,803 US6573196B1 (en) 2000-08-12 2000-08-12 Method of depositing organosilicate layers

Publications (3)

Publication Number Publication Date
JP2002164347A JP2002164347A (ja) 2002-06-07
JP2002164347A5 JP2002164347A5 (cg-RX-API-DMAC10.html) 2011-08-18
JP5075310B2 true JP5075310B2 (ja) 2012-11-21

Family

ID=24561503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001245703A Expired - Fee Related JP5075310B2 (ja) 2000-08-12 2001-08-13 有機ケイ酸塩層を堆積する方法

Country Status (5)

Country Link
US (1) US6573196B1 (cg-RX-API-DMAC10.html)
EP (1) EP1180554A3 (cg-RX-API-DMAC10.html)
JP (1) JP5075310B2 (cg-RX-API-DMAC10.html)
KR (1) KR100857664B1 (cg-RX-API-DMAC10.html)
TW (1) TW593739B (cg-RX-API-DMAC10.html)

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JP4381526B2 (ja) * 1999-10-26 2009-12-09 東京エレクトロン株式会社 プラズマエッチング方法
US6759327B2 (en) * 2001-10-09 2004-07-06 Applied Materials Inc. Method of depositing low k barrier layers
US6890850B2 (en) * 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US6838393B2 (en) * 2001-12-14 2005-01-04 Applied Materials, Inc. Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
US6699784B2 (en) 2001-12-14 2004-03-02 Applied Materials Inc. Method for depositing a low k dielectric film (K>3.5) for hard mask application
US7091137B2 (en) * 2001-12-14 2006-08-15 Applied Materials Bi-layer approach for a hermetic low dielectric constant layer for barrier applications
US6790788B2 (en) * 2003-01-13 2004-09-14 Applied Materials Inc. Method of improving stability in low k barrier layers
US7270931B2 (en) 2003-10-06 2007-09-18 International Business Machines Corporation Silicon-containing compositions for spin-on ARC/hardmask materials
US7030041B2 (en) 2004-03-15 2006-04-18 Applied Materials Inc. Adhesion improvement for low k dielectrics
US20050233555A1 (en) * 2004-04-19 2005-10-20 Nagarajan Rajagopalan Adhesion improvement for low k dielectrics to conductive materials
US7229911B2 (en) * 2004-04-19 2007-06-12 Applied Materials, Inc. Adhesion improvement for low k dielectrics to conductive materials
US7504727B2 (en) * 2004-05-14 2009-03-17 International Business Machines Corporation Semiconductor interconnect structure utilizing a porous dielectric material as an etch stop layer between adjacent non-porous dielectric materials
US7271093B2 (en) 2004-05-24 2007-09-18 Asm Japan K.K. Low-carbon-doped silicon oxide film and damascene structure using same
US20050277302A1 (en) * 2004-05-28 2005-12-15 Nguyen Son V Advanced low dielectric constant barrier layers
US7229041B2 (en) * 2004-06-30 2007-06-12 Ohio Central Steel Company Lifting lid crusher
US7288205B2 (en) 2004-07-09 2007-10-30 Applied Materials, Inc. Hermetic low dielectric constant layer for barrier applications
KR100713231B1 (ko) * 2005-12-26 2007-05-02 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
KR100817933B1 (ko) * 2006-09-28 2008-04-15 광주과학기술원 플루오로알킬렌옥시기가 치환된 페닐에틸실란 화합물 및 이를 중합한 고분자
WO2017218561A1 (en) 2016-06-13 2017-12-21 Gvd Coproraton Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles
US11679412B2 (en) 2016-06-13 2023-06-20 Gvd Corporation Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles

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US3962004A (en) * 1974-11-29 1976-06-08 Rca Corporation Pattern definition in an organic layer
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JPS62138529A (ja) * 1985-12-10 1987-06-22 Mitsubishi Electric Corp 有機シリコ−ン薄膜の形成方法
US4894352A (en) 1988-10-26 1990-01-16 Texas Instruments Inc. Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride
US5186718A (en) * 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
JP2899600B2 (ja) * 1994-01-25 1999-06-02 キヤノン販売 株式会社 成膜方法
KR100463858B1 (ko) * 1996-08-29 2005-02-28 마츠시타 덴끼 산교 가부시키가이샤 층간절연막의형성방법
US5989998A (en) 1996-08-29 1999-11-23 Matsushita Electric Industrial Co., Ltd. Method of forming interlayer insulating film
TW353775B (en) * 1996-11-27 1999-03-01 Tokyo Electron Ltd Production of semiconductor device
JP3173426B2 (ja) * 1997-06-09 2001-06-04 日本電気株式会社 シリカ絶縁膜の製造方法及び半導体装置の製造方法
JP3411559B2 (ja) * 1997-07-28 2003-06-03 マサチューセッツ・インスティチュート・オブ・テクノロジー シリコーン膜の熱分解化学蒸着法
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JP3726226B2 (ja) * 1998-02-05 2005-12-14 日本エー・エス・エム株式会社 絶縁膜及びその製造方法
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US6436824B1 (en) * 1999-07-02 2002-08-20 Chartered Semiconductor Manufacturing Ltd. Low dielectric constant materials for copper damascene

Also Published As

Publication number Publication date
JP2002164347A (ja) 2002-06-07
KR20020013771A (ko) 2002-02-21
US6573196B1 (en) 2003-06-03
TW593739B (en) 2004-06-21
EP1180554A3 (en) 2005-02-02
EP1180554A2 (en) 2002-02-20
KR100857664B1 (ko) 2008-09-08

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