TW593739B - Method of depositing organosilicate layers and use thereof - Google Patents

Method of depositing organosilicate layers and use thereof Download PDF

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Publication number
TW593739B
TW593739B TW090119185A TW90119185A TW593739B TW 593739 B TW593739 B TW 593739B TW 090119185 A TW090119185 A TW 090119185A TW 90119185 A TW90119185 A TW 90119185A TW 593739 B TW593739 B TW 593739B
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TW
Taiwan
Prior art keywords
layer
patent application
scope
item
reaction chamber
Prior art date
Application number
TW090119185A
Other languages
English (en)
Chinese (zh)
Inventor
Frederic Gaillard
Ellie Yieh
Li-Qun Xia
Tian-Hoe Lim
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW593739B publication Critical patent/TW593739B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H10P50/73—
    • H10W20/071—
    • H10W20/086—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers
    • H10P14/6336—
    • H10P14/6682—
    • H10P14/6686—
    • H10P14/69215—
    • H10P14/6922—
    • H10P14/6923—
    • H10P76/2043—
    • H10W20/084—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Architecture (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Materials For Photolithography (AREA)
TW090119185A 2000-08-12 2001-08-06 Method of depositing organosilicate layers and use thereof TW593739B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/638,803 US6573196B1 (en) 2000-08-12 2000-08-12 Method of depositing organosilicate layers

Publications (1)

Publication Number Publication Date
TW593739B true TW593739B (en) 2004-06-21

Family

ID=24561503

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090119185A TW593739B (en) 2000-08-12 2001-08-06 Method of depositing organosilicate layers and use thereof

Country Status (5)

Country Link
US (1) US6573196B1 (cg-RX-API-DMAC10.html)
EP (1) EP1180554A3 (cg-RX-API-DMAC10.html)
JP (1) JP5075310B2 (cg-RX-API-DMAC10.html)
KR (1) KR100857664B1 (cg-RX-API-DMAC10.html)
TW (1) TW593739B (cg-RX-API-DMAC10.html)

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US6759327B2 (en) * 2001-10-09 2004-07-06 Applied Materials Inc. Method of depositing low k barrier layers
US6890850B2 (en) * 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US6838393B2 (en) * 2001-12-14 2005-01-04 Applied Materials, Inc. Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
US6699784B2 (en) 2001-12-14 2004-03-02 Applied Materials Inc. Method for depositing a low k dielectric film (K>3.5) for hard mask application
US7091137B2 (en) * 2001-12-14 2006-08-15 Applied Materials Bi-layer approach for a hermetic low dielectric constant layer for barrier applications
US6790788B2 (en) * 2003-01-13 2004-09-14 Applied Materials Inc. Method of improving stability in low k barrier layers
US7270931B2 (en) 2003-10-06 2007-09-18 International Business Machines Corporation Silicon-containing compositions for spin-on ARC/hardmask materials
US7030041B2 (en) 2004-03-15 2006-04-18 Applied Materials Inc. Adhesion improvement for low k dielectrics
US20050233555A1 (en) * 2004-04-19 2005-10-20 Nagarajan Rajagopalan Adhesion improvement for low k dielectrics to conductive materials
US7229911B2 (en) * 2004-04-19 2007-06-12 Applied Materials, Inc. Adhesion improvement for low k dielectrics to conductive materials
US7504727B2 (en) * 2004-05-14 2009-03-17 International Business Machines Corporation Semiconductor interconnect structure utilizing a porous dielectric material as an etch stop layer between adjacent non-porous dielectric materials
US7271093B2 (en) 2004-05-24 2007-09-18 Asm Japan K.K. Low-carbon-doped silicon oxide film and damascene structure using same
US20050277302A1 (en) * 2004-05-28 2005-12-15 Nguyen Son V Advanced low dielectric constant barrier layers
US7229041B2 (en) * 2004-06-30 2007-06-12 Ohio Central Steel Company Lifting lid crusher
US7288205B2 (en) 2004-07-09 2007-10-30 Applied Materials, Inc. Hermetic low dielectric constant layer for barrier applications
KR100713231B1 (ko) * 2005-12-26 2007-05-02 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
KR100817933B1 (ko) * 2006-09-28 2008-04-15 광주과학기술원 플루오로알킬렌옥시기가 치환된 페닐에틸실란 화합물 및 이를 중합한 고분자
WO2017218561A1 (en) 2016-06-13 2017-12-21 Gvd Coproraton Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles
US11679412B2 (en) 2016-06-13 2023-06-20 Gvd Corporation Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles

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US5186718A (en) * 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
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Also Published As

Publication number Publication date
JP5075310B2 (ja) 2012-11-21
JP2002164347A (ja) 2002-06-07
KR20020013771A (ko) 2002-02-21
US6573196B1 (en) 2003-06-03
EP1180554A3 (en) 2005-02-02
EP1180554A2 (en) 2002-02-20
KR100857664B1 (ko) 2008-09-08

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