JP5067739B2 - 磁性薄膜とその成膜方法並びに磁性薄膜の応用デバイス - Google Patents

磁性薄膜とその成膜方法並びに磁性薄膜の応用デバイス Download PDF

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Publication number
JP5067739B2
JP5067739B2 JP2008193156A JP2008193156A JP5067739B2 JP 5067739 B2 JP5067739 B2 JP 5067739B2 JP 2008193156 A JP2008193156 A JP 2008193156A JP 2008193156 A JP2008193156 A JP 2008193156A JP 5067739 B2 JP5067739 B2 JP 5067739B2
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JP
Japan
Prior art keywords
thin film
magnetic thin
magnetic
alloy
film according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008193156A
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English (en)
Japanese (ja)
Other versions
JP2010034182A (ja
JP2010034182A5 (enExample
Inventor
武仁 島津
英夫 佐藤
北上　　修
岡本　　聡
基 青井
弘康 片岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University
Fuji Electric Co Ltd
Original Assignee
Tohoku University
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University, Fuji Electric Co Ltd filed Critical Tohoku University
Priority to JP2008193156A priority Critical patent/JP5067739B2/ja
Priority to CN200910152089.2A priority patent/CN101640098B/zh
Priority to US12/510,878 priority patent/US8076012B2/en
Publication of JP2010034182A publication Critical patent/JP2010034182A/ja
Publication of JP2010034182A5 publication Critical patent/JP2010034182A5/ja
Application granted granted Critical
Publication of JP5067739B2 publication Critical patent/JP5067739B2/ja
Active legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/656—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Co
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/82—Disk carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/115—Magnetic layer composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/32—Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
JP2008193156A 2008-07-28 2008-07-28 磁性薄膜とその成膜方法並びに磁性薄膜の応用デバイス Active JP5067739B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008193156A JP5067739B2 (ja) 2008-07-28 2008-07-28 磁性薄膜とその成膜方法並びに磁性薄膜の応用デバイス
CN200910152089.2A CN101640098B (zh) 2008-07-28 2009-07-28 磁性薄膜及其成膜方法以及磁性薄膜的应用装置
US12/510,878 US8076012B2 (en) 2008-07-28 2009-07-28 Magnetic thin film and method for forming the film, and magnetic thin film-applied device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008193156A JP5067739B2 (ja) 2008-07-28 2008-07-28 磁性薄膜とその成膜方法並びに磁性薄膜の応用デバイス

Publications (3)

Publication Number Publication Date
JP2010034182A JP2010034182A (ja) 2010-02-12
JP2010034182A5 JP2010034182A5 (enExample) 2012-03-15
JP5067739B2 true JP5067739B2 (ja) 2012-11-07

Family

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JP2008193156A Active JP5067739B2 (ja) 2008-07-28 2008-07-28 磁性薄膜とその成膜方法並びに磁性薄膜の応用デバイス

Country Status (3)

Country Link
US (1) US8076012B2 (enExample)
JP (1) JP5067739B2 (enExample)
CN (1) CN101640098B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
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JP5550007B2 (ja) * 2008-12-05 2014-07-16 国立大学法人東北大学 磁性薄膜及びその製造方法、並びにこのような磁性薄膜を用いた各種応用デバイス
CN102163433B (zh) * 2010-02-23 2013-12-25 昭和电工株式会社 热辅助磁记录介质和磁存储装置
JP5570270B2 (ja) * 2010-03-29 2014-08-13 昭和電工株式会社 熱アシスト磁気記録媒体及び磁気記憶装置
JP5346348B2 (ja) * 2011-02-23 2013-11-20 株式会社日立製作所 磁気記録媒体、磁気記録装置
US8742518B2 (en) 2011-03-31 2014-06-03 Seagate Technology Llc Magnetic tunnel junction with free layer having exchange coupled magnetic elements
US8481181B2 (en) 2011-03-31 2013-07-09 Seagate Technology Llc Exchange coupled magnetic elements
JP5901975B2 (ja) * 2012-01-13 2016-04-13 株式会社東芝 情報記録装置、及び情報記録方法
TWI514373B (zh) * 2012-02-15 2015-12-21 財團法人工業技術研究院 上固定型垂直磁化穿隧磁阻元件
KR102017623B1 (ko) * 2012-08-30 2019-09-03 삼성전자주식회사 자기 메모리 소자
JP6083163B2 (ja) 2012-09-11 2017-02-22 富士電機株式会社 垂直磁気記録媒体およびその製造方法
SG11201502575TA (en) 2012-12-06 2015-05-28 Fuji Electric Co Ltd Perpendicular magnetic recording medium
JP7219285B2 (ja) * 2018-10-30 2023-02-07 田中貴金属工業株式会社 面内磁化膜、面内磁化膜多層構造、ハードバイアス層、磁気抵抗効果素子、およびスパッタリングターゲット
JP7024914B2 (ja) * 2019-05-16 2022-02-24 Tdk株式会社 磁壁移動素子及び磁気記録アレイ

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JP3434476B2 (ja) 1999-09-29 2003-08-11 秋田県 高密度情報記録媒体及びその媒体の製造方法
JP3762277B2 (ja) * 2000-09-29 2006-04-05 キヤノン株式会社 磁気記録媒体及びその製造方法
JP2002208129A (ja) 2000-11-09 2002-07-26 Hitachi Maxell Ltd 磁気記録媒体及びその製造方法並びに磁気記録装置
JP3730518B2 (ja) 2001-01-19 2006-01-05 株式会社東芝 磁気記録媒体
JP3730906B2 (ja) 2001-12-03 2006-01-05 日立マクセル株式会社 磁気記録媒体及びその製造方法並びに磁気記録装置
JP4035457B2 (ja) * 2002-03-15 2008-01-23 キヤノン株式会社 機能デバイスの製造方法
AU2002343968A1 (en) 2002-10-10 2004-05-04 Fujitsu Limited Polycrystal structure film and method for producing the same
JP4207769B2 (ja) * 2002-12-20 2009-01-14 富士電機デバイステクノロジー株式会社 垂直磁気記録媒体およびその製造方法
JP3981732B2 (ja) 2003-03-27 2007-09-26 独立行政法人物質・材料研究機構 垂直磁気異方性を有するＦｅＰｔ磁性薄膜とその製造方法
JP2004311607A (ja) 2003-04-04 2004-11-04 Canon Inc 磁性体、磁気記録媒体、磁気記録再生装置、情報処理装置及びその製造方法
JP2005036294A (ja) * 2003-07-17 2005-02-10 Hitachi Metals Ltd 反強磁性合金および反強磁性合金を用いた磁気デバイス
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JP2011028809A (ja) * 2009-07-24 2011-02-10 Hitachi Ltd 磁気記録媒体

Also Published As

Publication number Publication date
JP2010034182A (ja) 2010-02-12
US20100055503A1 (en) 2010-03-04
CN101640098A (zh) 2010-02-03
CN101640098B (zh) 2013-05-29
US8076012B2 (en) 2011-12-13

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