JP5066510B2 - イメージセンサーおよびその製造方法 - Google Patents
イメージセンサーおよびその製造方法 Download PDFInfo
- Publication number
- JP5066510B2 JP5066510B2 JP2008319483A JP2008319483A JP5066510B2 JP 5066510 B2 JP5066510 B2 JP 5066510B2 JP 2008319483 A JP2008319483 A JP 2008319483A JP 2008319483 A JP2008319483 A JP 2008319483A JP 5066510 B2 JP5066510 B2 JP 5066510B2
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- Prior art keywords
- photodiode
- substrate
- layer
- image sensor
- conductive layer
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
<実施例>
Claims (7)
- 配線を含む回路が形成された第1基板と、
前記配線と接触するように前記第1基板上に形成された絶縁層と、
前記絶縁層と接触しながら前記第1基板とボンディングされ、前記配線と電気的に接続されるように結晶型半導体層に形成される高濃度第1導電型伝導層、第1導電型伝導層および第2導電型伝導層を含むフォトダイオードと、を含み、
前記接続は、前記配線の上側が露出するように前記フォトダイオードと前記絶縁層を一部除去して形成されたビアホールに、伝導性金属を充填して形成したビアプラグを、前記高濃度第1導電型伝導層および前記第1導電型伝導層の前記ビアホール内に接触させる接続であり、
前記ビアプラグおよび前記フォトダイオードの第2導電型伝導層と接するように前記ビアホール内に形成された第2絶縁層をさらに含むことを特徴とするイメージセンサー。 - 前記絶縁層は、シリコン酸化膜であることを特徴とする請求項1に記載のイメージセンサー。
- 前記フォトダイオードは、ピクセル毎に分離されたことを特徴とする請求項1に記載のイメージセンサー。
- 前記フォトダイオードの第2導電型伝導層は、接地されていることを特徴とする請求項1に記載のイメージセンサー。
- 配線を含む回路が形成された第1基板を準備する段階と、
前記第1基板上に前記配線と接触するように絶縁層を形成する段階と、
前記絶縁層と接触しながら前記第1基板とボンディングされ、前記配線と電気的に接続されるように結晶型半導体層にフォトダイオードを形成する段階と、
前記配線の上側が露出するように、前記フォトダイオードと前記絶縁層を一部除去してビアホールを形成する段階と、
前記ビアホールに伝導性金属を充填してビアプラグを形成する段階と、
前記ビアプラグおよび前記フォトダイオードの第2導電型伝導層と接するように、前記ビアホール内に第2絶縁層を形成する段階と、を含み、
前記フォトダイオードを形成する段階は、第2基板の上部に第2導電型伝導層、第1導電型伝導層、高濃度第1導電型伝導層を形成する段階と、前記第1基板とボンディングされた第2基板の下側を除去してフォトダイオードを露出させる段階と、を含み、
前記ビアプラグを形成する段階は、前記ビアホール内の高濃度第1導電型伝導層と、第1導電型伝導層と接触するように前記ビアプラグを形成する段階を含むことを特徴とするイメージセンサーの製造方法。 - 前記絶縁層は、シリコン酸化膜であることを特徴とする請求項5に記載のイメージセンサーの製造方法。
- 前記ビアプラグを形成する段階の後に、前記フォトダイオードをピクセル毎に分離する段階をさらに含むことを特徴とする請求項5に記載のイメージセンサーの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0001937 | 2008-01-07 | ||
KR1020080001937A KR100856942B1 (ko) | 2008-01-07 | 2008-01-07 | 이미지센서 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009164601A JP2009164601A (ja) | 2009-07-23 |
JP5066510B2 true JP5066510B2 (ja) | 2012-11-07 |
Family
ID=40022544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008319483A Expired - Fee Related JP5066510B2 (ja) | 2008-01-07 | 2008-12-16 | イメージセンサーおよびその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7759156B2 (ja) |
JP (1) | JP5066510B2 (ja) |
KR (1) | KR100856942B1 (ja) |
CN (1) | CN101483184B (ja) |
DE (1) | DE102008063979A1 (ja) |
TW (1) | TW200931656A (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101063651B1 (ko) * | 2007-12-27 | 2011-09-14 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
KR20100069940A (ko) * | 2008-12-17 | 2010-06-25 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
CN102569328B (zh) | 2012-03-16 | 2015-05-13 | 上海丽恒光微电子科技有限公司 | 感光成像装置、半导体器件的制作方法 |
US9153483B2 (en) | 2013-10-30 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of semiconductor integrated circuit fabrication |
WO2020000714A1 (zh) | 2018-06-28 | 2020-01-02 | 北京金风科创风电设备有限公司 | 阻尼器以及具有该阻尼器的承载围护结构 |
CN109273466A (zh) * | 2018-09-04 | 2019-01-25 | 复旦大学 | 一种三维图像传感器及其制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2617798B2 (ja) * | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
JP5105695B2 (ja) * | 2001-11-05 | 2012-12-26 | カミヤチョウ アイピー ホールディングス | 固体イメージセンサおよびその製造方法 |
JP4012743B2 (ja) * | 2002-02-12 | 2007-11-21 | 浜松ホトニクス株式会社 | 光検出装置 |
JP4304927B2 (ja) * | 2002-07-16 | 2009-07-29 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
KR100889365B1 (ko) * | 2004-06-11 | 2009-03-19 | 이상윤 | 3차원 구조의 영상센서와 그 제작방법 |
US6927432B2 (en) * | 2003-08-13 | 2005-08-09 | Motorola, Inc. | Vertically integrated photosensor for CMOS imagers |
KR100888684B1 (ko) * | 2006-08-25 | 2009-03-13 | 에스.오.아이. 테크 실리콘 온 인슐레이터 테크놀로지스 | 광검출장치 |
-
2008
- 2008-01-07 KR KR1020080001937A patent/KR100856942B1/ko not_active IP Right Cessation
- 2008-12-12 TW TW097148670A patent/TW200931656A/zh unknown
- 2008-12-12 US US12/333,391 patent/US7759156B2/en not_active Expired - Fee Related
- 2008-12-16 JP JP2008319483A patent/JP5066510B2/ja not_active Expired - Fee Related
- 2008-12-19 DE DE102008063979A patent/DE102008063979A1/de not_active Withdrawn
- 2008-12-26 CN CN2008101888113A patent/CN101483184B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW200931656A (en) | 2009-07-16 |
CN101483184B (zh) | 2010-10-27 |
KR100856942B1 (ko) | 2008-09-04 |
JP2009164601A (ja) | 2009-07-23 |
CN101483184A (zh) | 2009-07-15 |
DE102008063979A1 (de) | 2009-07-09 |
US7759156B2 (en) | 2010-07-20 |
US20090174025A1 (en) | 2009-07-09 |
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