JP5059025B2 - 超高速リカバリダイオード - Google Patents

超高速リカバリダイオード Download PDF

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Publication number
JP5059025B2
JP5059025B2 JP2008548658A JP2008548658A JP5059025B2 JP 5059025 B2 JP5059025 B2 JP 5059025B2 JP 2008548658 A JP2008548658 A JP 2008548658A JP 2008548658 A JP2008548658 A JP 2008548658A JP 5059025 B2 JP5059025 B2 JP 5059025B2
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JP
Japan
Prior art keywords
lightly doped
layer
rectifier
metal layer
trenches
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Expired - Fee Related
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JP2008548658A
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English (en)
Japanese (ja)
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JP2009521817A5 (enExample
JP2009521817A (ja
Inventor
フランシス，リチャード
リー，チーアン
ファン，ヤン，ユー
ジョンソン，エリック
Original Assignee
キュースピード セミコンダクター インコーポレーテッド
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Publication of JP2009521817A5 publication Critical patent/JP2009521817A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Rectifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2008548658A 2005-12-27 2006-12-19 超高速リカバリダイオード Expired - Fee Related JP5059025B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/320,313 US7696598B2 (en) 2005-12-27 2005-12-27 Ultrafast recovery diode
US11/320,313 2005-12-27
PCT/US2006/049118 WO2007076056A2 (en) 2005-12-27 2006-12-19 Ultrafast recovery diode

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012043607A Division JP5704652B2 (ja) 2005-12-27 2012-02-29 超高速リカバリダイオード

Publications (3)

Publication Number Publication Date
JP2009521817A JP2009521817A (ja) 2009-06-04
JP2009521817A5 JP2009521817A5 (enExample) 2009-12-17
JP5059025B2 true JP5059025B2 (ja) 2012-10-24

Family

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JP2008548658A Expired - Fee Related JP5059025B2 (ja) 2005-12-27 2006-12-19 超高速リカバリダイオード
JP2012043607A Expired - Fee Related JP5704652B2 (ja) 2005-12-27 2012-02-29 超高速リカバリダイオード

Family Applications After (1)

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JP2012043607A Expired - Fee Related JP5704652B2 (ja) 2005-12-27 2012-02-29 超高速リカバリダイオード

Country Status (5)

Country Link
US (1) US7696598B2 (enExample)
JP (2) JP5059025B2 (enExample)
CN (2) CN102683428A (enExample)
TW (1) TWI381532B (enExample)
WO (1) WO2007076056A2 (enExample)

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US7595523B2 (en) * 2007-02-16 2009-09-29 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
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CN102723369B (zh) * 2012-06-12 2014-12-10 电子科技大学 一种具有低导通压降的P-i-N二极管
CN103579365A (zh) * 2012-07-24 2014-02-12 杭州恩能科技有限公司 一种新型二极管器件
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US9455621B2 (en) 2013-08-28 2016-09-27 Power Integrations, Inc. Controller IC with zero-crossing detector and capacitor discharge switching element
US9029974B2 (en) * 2013-09-11 2015-05-12 Infineon Technologies Ag Semiconductor device, junction field effect transistor and vertical field effect transistor
US9318597B2 (en) 2013-09-20 2016-04-19 Cree, Inc. Layout configurations for integrating schottky contacts into a power transistor device
US20150084063A1 (en) * 2013-09-20 2015-03-26 Cree, Inc. Semiconductor device with a current spreading layer
US10600903B2 (en) 2013-09-20 2020-03-24 Cree, Inc. Semiconductor device including a power transistor device and bypass diode
US10868169B2 (en) 2013-09-20 2020-12-15 Cree, Inc. Monolithically integrated vertical power transistor and bypass diode
CN104701367A (zh) * 2013-12-06 2015-06-10 上海华虹宏力半导体制造有限公司 稳流管及制造方法
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
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JP6287377B2 (ja) * 2014-03-11 2018-03-07 住友電気工業株式会社 ワイドバンドギャップ半導体装置
JP6539026B2 (ja) * 2014-08-22 2019-07-03 日産自動車株式会社 半導体装置及びその製造方法
CN104269445B (zh) * 2014-10-11 2017-11-10 丽晶美能（北京）电子技术有限公司 快恢复二极管及快恢复二极管的制作方法
CN106033781A (zh) * 2015-03-16 2016-10-19 中航（重庆）微电子有限公司 肖特基势垒二极管及其制备方法
US9602009B1 (en) 2015-12-08 2017-03-21 Power Integrations, Inc. Low voltage, closed loop controlled energy storage circuit
US9629218B1 (en) 2015-12-28 2017-04-18 Power Integrations, Inc. Thermal protection for LED bleeder in fault condition
JP6787690B2 (ja) 2016-05-19 2020-11-18 ローム株式会社 高速ダイオード及びその製造方法
CN107731891A (zh) * 2016-08-14 2018-02-23 朱江 一种沟槽肖特基半导体装置
CN106784021A (zh) * 2016-12-15 2017-05-31 东莞市联洲知识产权运营管理有限公司 一种改进的沟槽式肖特基整流器件及其制造方法
US11749758B1 (en) 2019-11-05 2023-09-05 Semiq Incorporated Silicon carbide junction barrier schottky diode with wave-shaped regions
US11469333B1 (en) 2020-02-19 2022-10-11 Semiq Incorporated Counter-doped silicon carbide Schottky barrier diode
JP2022159760A (ja) * 2021-04-05 2022-10-18 ローム株式会社 半導体装置
CN113659014B (zh) * 2021-10-20 2022-01-18 四川洪芯微科技有限公司 一种含有阴极短接槽栅结构的功率二极管
CN115172445B (zh) * 2022-09-02 2022-11-29 深圳芯能半导体技术有限公司 快恢复功率器件的结构、制造方法及电子设备
CN115132726B (zh) * 2022-09-02 2022-11-29 深圳芯能半导体技术有限公司 快恢复功率器件的结构、制造方法及电子设备
CN115312581B (zh) * 2022-10-10 2023-01-03 深圳市威兆半导体股份有限公司 快恢复二极管及其制备方法
CN115312591B (zh) * 2022-10-10 2022-12-23 深圳市威兆半导体股份有限公司 一种快恢复二极管及其制备方法

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Also Published As

Publication number Publication date
CN102683428A (zh) 2012-09-19
US7696598B2 (en) 2010-04-13
JP2012142590A (ja) 2012-07-26
WO2007076056A3 (en) 2007-09-20
JP5704652B2 (ja) 2015-04-22
US20070145414A1 (en) 2007-06-28
CN101366124A (zh) 2009-02-11
CN101366124B (zh) 2012-07-04
WO2007076056A2 (en) 2007-07-05
TW200742094A (en) 2007-11-01
JP2009521817A (ja) 2009-06-04
TWI381532B (zh) 2013-01-01

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