JP5022587B2 - 半導体レーザの駆動方法および装置、並びに補正パターンの導出方法および装置 - Google Patents

半導体レーザの駆動方法および装置、並びに補正パターンの導出方法および装置 Download PDF

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Publication number
JP5022587B2
JP5022587B2 JP2005294573A JP2005294573A JP5022587B2 JP 5022587 B2 JP5022587 B2 JP 5022587B2 JP 2005294573 A JP2005294573 A JP 2005294573A JP 2005294573 A JP2005294573 A JP 2005294573A JP 5022587 B2 JP5022587 B2 JP 5022587B2
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JP
Japan
Prior art keywords
semiconductor laser
output
photodetector
driving
laser
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Expired - Lifetime
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JP2005294573A
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English (en)
Japanese (ja)
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JP2007103823A (ja
JP2007103823A5 (https=
Inventor
友一 寺村
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Fujifilm Corp
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Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority to JP2005294573A priority Critical patent/JP5022587B2/ja
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to CN2006800372544A priority patent/CN101283492B/zh
Priority to CN2011102843840A priority patent/CN102324694B/zh
Priority to TW095137007A priority patent/TWI448026B/zh
Priority to CN2011102835276A priority patent/CN102324693B/zh
Priority to PCT/JP2006/320352 priority patent/WO2007043597A1/en
Priority to US12/089,463 priority patent/US7970029B2/en
Priority to KR1020087010248A priority patent/KR101258167B1/ko
Publication of JP2007103823A publication Critical patent/JP2007103823A/ja
Publication of JP2007103823A5 publication Critical patent/JP2007103823A5/ja
Application granted granted Critical
Publication of JP5022587B2 publication Critical patent/JP5022587B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
    • B41J2/44—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using single radiation source per colour, e.g. lighting beams or shutter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laser Beam Printer (AREA)
JP2005294573A 2005-10-07 2005-10-07 半導体レーザの駆動方法および装置、並びに補正パターンの導出方法および装置 Expired - Lifetime JP5022587B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2005294573A JP5022587B2 (ja) 2005-10-07 2005-10-07 半導体レーザの駆動方法および装置、並びに補正パターンの導出方法および装置
CN2011102843840A CN102324694B (zh) 2005-10-07 2006-10-05 用于获得校正图案的方法和设备
TW095137007A TWI448026B (zh) 2005-10-07 2006-10-05 驅動半導體雷射的方法及設備、用於導出半導體雷射之驅動電流圖形的方法及設備
CN2011102835276A CN102324693B (zh) 2005-10-07 2006-10-05 用于获得校正图案的方法
CN2006800372544A CN101283492B (zh) 2005-10-07 2006-10-05 用于驱动半导体激光器的方法和设备、和用于驱动用于半导体激光器的驱动电流图案的方法和设备
PCT/JP2006/320352 WO2007043597A1 (en) 2005-10-07 2006-10-05 Method and apparatus for driving semiconductor lasers, and method and apparatus for deriving drive current patterns for semiconductor lasers
US12/089,463 US7970029B2 (en) 2005-10-07 2006-10-05 Method and apparatus for driving semiconductor lasers, and method and apparatus for deriving drive current patterns for semiconductor lasers
KR1020087010248A KR101258167B1 (ko) 2005-10-07 2006-10-05 반도체 레이저 구동 방법 및 장치, 그리고 반도체 레이저의구동 전류 패턴 도출 방법 및 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005294573A JP5022587B2 (ja) 2005-10-07 2005-10-07 半導体レーザの駆動方法および装置、並びに補正パターンの導出方法および装置

Publications (3)

Publication Number Publication Date
JP2007103823A JP2007103823A (ja) 2007-04-19
JP2007103823A5 JP2007103823A5 (https=) 2008-09-04
JP5022587B2 true JP5022587B2 (ja) 2012-09-12

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Family Applications (1)

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JP2005294573A Expired - Lifetime JP5022587B2 (ja) 2005-10-07 2005-10-07 半導体レーザの駆動方法および装置、並びに補正パターンの導出方法および装置

Country Status (6)

Country Link
US (1) US7970029B2 (https=)
JP (1) JP5022587B2 (https=)
KR (1) KR101258167B1 (https=)
CN (3) CN101283492B (https=)
TW (1) TWI448026B (https=)
WO (1) WO2007043597A1 (https=)

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US20100056887A1 (en) * 2006-11-27 2010-03-04 Pioneer Corporation Emission sensor device and bioinformation detecting method
US20100027569A1 (en) * 2008-07-29 2010-02-04 John Brekke Uv diode-laser module with optical fiber delivery
DE102009021251A1 (de) 2009-05-14 2010-11-18 Limo Patentverwaltung Gmbh & Co. Kg Vorrichtung zur Formung von Laserstrahlung sowie Laservorrichtung mit einer derartigen Vorrichtung
JP5640257B2 (ja) * 2010-03-18 2014-12-17 大塚電子株式会社 量子効率測定方法および量子効率測定装置
JP6234090B2 (ja) 2013-07-09 2017-11-22 三菱電機株式会社 半導体装置
JP6791840B2 (ja) * 2014-08-14 2020-11-25 エムティティ イノベーション インコーポレイテッドＭｔｔ Ｉｎｎｏｖａｔｉｏｎ Ｉｎｃｏｒｐｏｒａｔｅｄ 光源
WO2018154984A1 (ja) * 2017-02-23 2018-08-30 富士フイルム株式会社 投写型表示装置、投写型表示装置の制御方法、投写型表示装置の制御プログラム
JP6807542B2 (ja) * 2017-07-11 2021-01-06 パナソニックＩｐマネジメント株式会社 光源装置および画像表示装置
CN108666861B (zh) * 2018-05-09 2019-12-06 歌尔股份有限公司 多激光器的驱动电流校正方法及装置、激光投影仪
CN109375088A (zh) * 2018-08-10 2019-02-22 武汉盛为芯科技有限公司 分布反馈半导体激光器芯片测试过程中降低温升影响方法
DE102018213819B3 (de) * 2018-08-16 2019-11-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren für TDC-Sharing bei laufzeitbasierter Distanzmessung
US20220088704A1 (en) * 2020-09-18 2022-03-24 Standex International Corporation Multi-source laser head for laser engraving
CN115407314A (zh) * 2021-05-26 2022-11-29 锐驰智光(北京)科技有限公司 激光发射模块及具有此的激光雷达
CN117075334A (zh) * 2023-09-14 2023-11-17 西安炬光科技股份有限公司 光学模组及光学系统

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JP3347200B2 (ja) * 1993-10-29 2002-11-20 ファナック株式会社 半導体レーザの制御方法
JPH08274395A (ja) 1995-04-03 1996-10-18 Mitsubishi Electric Corp 半導体レーザ駆動方法，及び半導体レーザ劣化判定方法，並びに半導体レーザ駆動装置
US5966394A (en) * 1997-05-30 1999-10-12 Eastman Kodak Company Laser diode controller
JP2001085314A (ja) * 1999-09-13 2001-03-30 Nikon Corp 露光方法及び装置、デバイスの製造方法、及び露光装置の製造方法
JP2001267669A (ja) 2000-03-16 2001-09-28 Fuji Photo Film Co Ltd レーザ駆動装置およびその方法
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JP4773146B2 (ja) * 2005-07-01 2011-09-14 富士フイルム株式会社 半導体レーザの駆動方法および装置、並びに半導体レーザ駆動電流パターンの導出方法および装置
JP2008265149A (ja) * 2007-04-20 2008-11-06 Dainippon Screen Mfg Co Ltd 露光装置およびレーザー制御部用回路基板

Also Published As

Publication number Publication date
TWI448026B (zh) 2014-08-01
JP2007103823A (ja) 2007-04-19
TW200729655A (en) 2007-08-01
CN102324694B (zh) 2013-01-30
CN102324693A (zh) 2012-01-18
US7970029B2 (en) 2011-06-28
US20090141754A1 (en) 2009-06-04
KR20080068828A (ko) 2008-07-24
CN101283492A (zh) 2008-10-08
CN101283492B (zh) 2011-11-02
CN102324694A (zh) 2012-01-18
CN102324693B (zh) 2013-01-30
KR101258167B1 (ko) 2013-04-25
WO2007043597A9 (en) 2007-05-24
WO2007043597A1 (en) 2007-04-19

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