JP6234090B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6234090B2 JP6234090B2 JP2013143562A JP2013143562A JP6234090B2 JP 6234090 B2 JP6234090 B2 JP 6234090B2 JP 2013143562 A JP2013143562 A JP 2013143562A JP 2013143562 A JP2013143562 A JP 2013143562A JP 6234090 B2 JP6234090 B2 JP 6234090B2
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- 239000004065 semiconductor Substances 0.000 title claims description 203
- 239000013307 optical fiber Substances 0.000 claims description 35
- 238000001514 detection method Methods 0.000 claims description 26
- 230000003287 optical effect Effects 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 230000001902 propagating effect Effects 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 6
- 230000005856 abnormality Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K2217/00—Temperature measurement using electric or magnetic components already present in the system to be measured
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Description
図8は従来の温度検出機能を有する半導体装置の平面構成を模式的に示す説明図である。同図に示すように、基板50上の大部分の領域にIGBTの主電極(コレクタ電極となる)表面電極51が形成され、一部にIGBTの絶縁ゲート型トランジスタのゲート電極53が構成される。そして、他の一部に電流センス部52(電流センス主要部52M及びパッド部52P)が形成され、さらに他の一部に温度センス部54(温度センス主要部54M及びパッド部54P)が形成される。なお、電流センス主要部52Mには例えばセンス用IGBT(の主電極(コレクタ電極))が形成され、温度センス主要部54Mには例えばフォトダイオードが形成される。
図1はこの発明の実施の形態1である半導体装置の概略断面構成を模式的に示す説明図である。
なお、式(1)のEg(0)、α及びβは以下の表1で示す値となる。
図6はこの発明の実施の形態2である半導体装置の平面構成を模式的に示す説明図である。同図に示すように、各々が図2で示した本体IGBT101及び電流センス用IGBT102等を有する複数のワイドギャップ半導体素子形成部1a〜1cが形成されており、ワイドギャップ半導体素子形成部1a〜1cはそれぞれの本体IGBT101等によるバイポーラ動作による発光により、図1で示したようにワイドギャップ半導体素子形成部1a〜1cそれぞれの半導体能動部12の側面から複数の(3つの)出射光を照射する。
図7はこの発明の実施の形態3である半導体装置の平面構成を模式的に示す説明図である。同図に示すように、実施の形態2と同様、ワイドギャップ半導体素子形成部1として複数の(3つの)ワイドギャップ半導体素子形成部1a〜1cを有しており、ワイドギャップ半導体素子形成部1a〜1cはそれぞれ図1で示したように半導体能動部12の側面から発光する。
図7で示した制御回路26は、例えば、ソフトウェアに基づくCPUを用いたプログラム処理によって実行することができる。
Claims (5)
- 発光性を有するワイドギャップ半導体材料で形成され、動作時に発光する半導体素子と、
前記半導体素子の動作時に流れる電流を動作電流として検出する電流検出部と、
前記半導体素子の動作時における出射光を入射する光ファイバーと、
前記光ファイバーを伝搬して得られる前記出射光を受光するフォトダイオードとを備え、
前記電流検出部は前記フォトダイオードと独立して前記動作電流を検出し、
前記電流検出部により検出された前記動作電流及び前記フォトダイオードの出力電流は、前記動作電流と前記出力電流とから前記半導体素子の温度を求めることができる温度検出特性を有する、
半導体装置。 - 請求項1記載の半導体装置であって、
前記半導体素子及び前記電流検出部は一体的に1チップ化された半導体素子形成部として形成され、前記半導体素子形成部の側面部から前記半導体素子の前記出射光が出射され、
前記光ファイバーの入射面を前記半導体素子形成部の前記側面部に対向するように配置したことを特徴とする、
半導体装置。 - 請求項2記載の半導体装置であって、
前記半導体素子形成部は各々が前記半導体素子及び前記電流検出部を有する複数の半導体素子形成部を含み、
前記光ファイバーは、各々が入射面を有する複数の分岐部分と出射面を有し前記複数の分岐部分に共通に接続される統合部分とから構成され、前記複数の分岐部分それぞれの入射面は前記複数の半導体素子形成部のうち対応する半導体素子形成部の発光時における出射光が入射されるように設けられ、前記統合部分の前記出射面は前記出射光が前記フォトダイオードにて受光されるように設けられる、
半導体装置。 - 請求項3記載の半導体装置であって、
前記複数の分岐部分と前記統合部分との間に設けられ、前記複数の分岐部分のうち一の分岐部分である選択光路と前記統合部分とにより形成される光路を有効にする光路スイッチをさらに備える、
半導体装置。 - 請求項1〜請求項4のうち、いずれか1項に記載の半導体装置であって、
発光性を有する前記ワイドギャップ半導体材料はSiC及びGaNのうち少なくとも一つを含み、
前記半導体素子は、ショットキバリアダイオード、PNダイオード、IGBT、及びバイポーラトランジスタのうち少なくとも一つの素子を含む、
半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013143562A JP6234090B2 (ja) | 2013-07-09 | 2013-07-09 | 半導体装置 |
US14/223,149 US9627571B2 (en) | 2013-07-09 | 2014-03-24 | Semiconductor device |
KR1020140074048A KR101593904B1 (ko) | 2013-07-09 | 2014-06-18 | 반도체장치 |
DE102014211905.7A DE102014211905B4 (de) | 2013-07-09 | 2014-06-20 | Halbleitervorrichtung geeignet zur Detektion einer Temperatur eines Halbleiterbauelements mit breiter Bandlücke |
CN201410325571.2A CN104283533B (zh) | 2013-07-09 | 2014-07-09 | 半导体装置 |
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JP2013143562A JP6234090B2 (ja) | 2013-07-09 | 2013-07-09 | 半導体装置 |
Publications (3)
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JP2015018861A JP2015018861A (ja) | 2015-01-29 |
JP2015018861A5 JP2015018861A5 (ja) | 2016-03-10 |
JP6234090B2 true JP6234090B2 (ja) | 2017-11-22 |
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US (1) | US9627571B2 (ja) |
JP (1) | JP6234090B2 (ja) |
KR (1) | KR101593904B1 (ja) |
CN (1) | CN104283533B (ja) |
DE (1) | DE102014211905B4 (ja) |
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DE102017210870B3 (de) | 2017-06-28 | 2018-10-04 | Robert Bosch Gmbh | Vorrichtung zur Messung einer thermischen Degradation des Kühlpfads leistungselektronischer Komponenten mittels Lumineszenz |
DE102017212856A1 (de) * | 2017-07-26 | 2019-01-31 | Robert Bosch Gmbh | Vorrichtung zur Umformung elektrischer Energie und Verfahren zur Bestimmung der Temperatur eines Halbleiterbauelements durch Lumineszenz |
DE102022124808A1 (de) | 2022-09-27 | 2024-03-28 | Infineon Technologies Ag | Leistungs-halbleitervorrichtung, messsystem und verfahren zum bestimmen eines stroms einer leistungs-halbleitervorrichtung |
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JPS63285430A (ja) | 1987-05-18 | 1988-11-22 | Fujitsu Ltd | 温度計測装置 |
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JP3290618B2 (ja) * | 1997-11-28 | 2002-06-10 | 松下電器産業株式会社 | 光センサ装置およびそれに用いられる信号処理回路 |
JP2000183823A (ja) * | 1998-12-14 | 2000-06-30 | Canon Inc | コヒ―レント光伝送装置 |
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JP2006206721A (ja) * | 2005-01-27 | 2006-08-10 | Kansai Electric Power Co Inc:The | 高耐熱合成高分子化合物及びこれで被覆した高耐電圧半導体装置 |
JP2006271098A (ja) | 2005-03-24 | 2006-10-05 | Hitachi Ltd | 電力変換装置 |
KR20070024235A (ko) * | 2005-08-26 | 2007-03-02 | 삼성전자주식회사 | 백라이트 유닛, 이를 포함하는 표시장치 그리고 백라이트유닛의 제어방법 |
JP5022587B2 (ja) * | 2005-10-07 | 2012-09-12 | 富士フイルム株式会社 | 半導体レーザの駆動方法および装置、並びに補正パターンの導出方法および装置 |
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JP4877337B2 (ja) | 2009-02-17 | 2012-02-15 | トヨタ自動車株式会社 | 半導体装置 |
KR20120061616A (ko) * | 2010-12-03 | 2012-06-13 | 한국전자통신연구원 | 비표지식 바이오센서 |
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2013
- 2013-07-09 JP JP2013143562A patent/JP6234090B2/ja active Active
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2014
- 2014-03-24 US US14/223,149 patent/US9627571B2/en active Active
- 2014-06-18 KR KR1020140074048A patent/KR101593904B1/ko active IP Right Grant
- 2014-06-20 DE DE102014211905.7A patent/DE102014211905B4/de active Active
- 2014-07-09 CN CN201410325571.2A patent/CN104283533B/zh active Active
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DE102014211905A1 (de) | 2015-01-15 |
KR101593904B1 (ko) | 2016-02-16 |
DE102014211905B4 (de) | 2019-01-10 |
US9627571B2 (en) | 2017-04-18 |
JP2015018861A (ja) | 2015-01-29 |
KR20150006776A (ko) | 2015-01-19 |
CN104283533B (zh) | 2017-08-29 |
US20150014705A1 (en) | 2015-01-15 |
CN104283533A (zh) | 2015-01-14 |
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