JP6252585B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6252585B2 JP6252585B2 JP2015521341A JP2015521341A JP6252585B2 JP 6252585 B2 JP6252585 B2 JP 6252585B2 JP 2015521341 A JP2015521341 A JP 2015521341A JP 2015521341 A JP2015521341 A JP 2015521341A JP 6252585 B2 JP6252585 B2 JP 6252585B2
- Authority
- JP
- Japan
- Prior art keywords
- mosfet
- band gap
- light
- semiconductor element
- wide band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 119
- 230000004888 barrier function Effects 0.000 claims description 34
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 20
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 19
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 12
- 238000001514 detection method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009529 body temperature measurement Methods 0.000 description 4
- 239000011796 hollow space material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000036632 reaction speed Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0033—Devices characterised by their operation having Schottky barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0041—Devices characterised by their operation characterised by field-effect operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
図1は、本発明の一実施形態の半導体装置1としてのパワー半導体モジュールの模式的な断面図である。図1の半導体装置1は、絶縁回路基板2上にパワー半導体チップ3がはんだ4により接合されている。絶縁回路基板2は、絶縁基板2aの一方の面に、導電層2bが選択的に形成され、これにより半導体装置1と電気的に接続する回路パターンが形成されている。他方の面に導電層2cが形成されてなる。
ショットキーバリアダイオード13に流れる電流の大きさと、ショットキーバリアダイオード13から放射される光の強度とは、前述したように線形の関係にある。そこで、あらかじめショットキーバリアダイオード13から放射される光の強度と、ショットキーバリアダイオード13に流れる電流の大きさとの関係をデータ化しておく。このデータを参照することにより、受光素子7を含む制御(保護)回路は、受光素子7から受光した光の強度によって、通電時のショットキーバリアダイオード13に流れている電流値を得ることができる。
図3に示したMOSFET23に通電した場合に、光は、図中矢印で示すようにMOSFET23の側面から放射される。そこで、受光素子7は、MOSFET23の側方に近接配置される。
MOSFET23のボディダイオード234に流れる電流の大きさと、MOSFET23から放射される光の強度とは、線形の関係にある。
2 絶縁回路基板
3 パワー半導体チップ
4 はんだ
5 ボンディングワイヤ
6 ケース
7 受光素子
13 ショットキーバリアダイオード
23 MOSFET
Claims (4)
- ワイドバンドギャップ半導体素子と、
該ワイドバンドギャップ半導体素子の側方に近接配置され、該ワイドバンドギャップ半導体素子が通電されたときの発光を受光する受光素子と、
を備え、
前記受光素子により前記ワイドバンドギャップ半導体素子の側面から発光される光の強度を検出し、該光の強度により該ワイドバンドギャップ半導体素子に流れる電流値を得て、
該電流値から該ワイドバンドギャップ半導体素子の温度を検出する半導体装置。 - 前記ワイドバンドギャップ半導体素子の検出された温度により、該ワイドバンドギャップ半導体素子のゲート電圧を下げる制御を行う請求項1記載の半導体装置。
- 前記ワイドバンドギャップ半導体素子が、MOSFET又はショットキーバリアダイオードを含む請求項1又は2記載の半導体装置。
- 前記ワイドバンドギャップ半導体素子が、シリコンカーバイド又はガリウムナイトライドよりなる請求項3記載の半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013117915 | 2013-06-04 | ||
JP2013117915 | 2013-06-04 | ||
PCT/JP2014/061773 WO2014196285A1 (ja) | 2013-06-04 | 2014-04-25 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2014196285A1 JPWO2014196285A1 (ja) | 2017-02-23 |
JP6252585B2 true JP6252585B2 (ja) | 2017-12-27 |
Family
ID=52007939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015521341A Expired - Fee Related JP6252585B2 (ja) | 2013-06-04 | 2014-04-25 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9773936B2 (ja) |
JP (1) | JP6252585B2 (ja) |
WO (1) | WO2014196285A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6299441B2 (ja) * | 2014-06-02 | 2018-03-28 | 株式会社デンソー | 半導体装置 |
JP6468921B2 (ja) * | 2015-03-31 | 2019-02-13 | 新電元工業株式会社 | 電子装置 |
JP2019024274A (ja) * | 2015-11-06 | 2019-02-14 | 株式会社日立製作所 | 電力変換装置 |
US10658268B2 (en) * | 2016-09-09 | 2020-05-19 | Mitsubishi Electric Corporation | Semiconductor device |
CN106354046A (zh) * | 2016-11-18 | 2017-01-25 | 广州视源电子科技股份有限公司 | 智能功率模块的控制方法和装置 |
DE102017209833A1 (de) * | 2017-06-12 | 2018-12-13 | Robert Bosch Gmbh | Vorrichtung zur Umformung elektrischer Energie und Verfahren zur Bestimmung eines durch ein elektronisches Bauelement fließenden Stroms |
DE102017210863A1 (de) * | 2017-06-28 | 2019-01-03 | Robert Bosch Gmbh | Totzeitregelung mit aktiver Rückkopplung durch Lumineszenz |
DE102017210870B3 (de) * | 2017-06-28 | 2018-10-04 | Robert Bosch Gmbh | Vorrichtung zur Messung einer thermischen Degradation des Kühlpfads leistungselektronischer Komponenten mittels Lumineszenz |
DE102017212856A1 (de) * | 2017-07-26 | 2019-01-31 | Robert Bosch Gmbh | Vorrichtung zur Umformung elektrischer Energie und Verfahren zur Bestimmung der Temperatur eines Halbleiterbauelements durch Lumineszenz |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4989934A (en) * | 1987-11-13 | 1991-02-05 | Kopin Corporation | Monolithic integrated transceiver of III-V devices on silicon |
JPH0644116Y2 (ja) * | 1988-07-05 | 1994-11-14 | 三洋電機株式会社 | 炭化ケイ素発光ダイオード装置 |
JP2767965B2 (ja) * | 1990-03-12 | 1998-06-25 | 三菱電機株式会社 | 電力変換装置及びインバータ装置 |
US5488468A (en) * | 1991-12-26 | 1996-01-30 | Sharp Kabushiki Kaisha | Optical distance measuring apparatus having semiconductor position sensitive photodetector |
JPH07135731A (ja) * | 1993-11-09 | 1995-05-23 | Fuji Electric Co Ltd | 半導体素子の過熱保護装置 |
JP3147141B2 (ja) * | 1995-08-30 | 2001-03-19 | 株式会社日立製作所 | 光アセンブリ |
JP3194353B2 (ja) * | 1996-07-26 | 2001-07-30 | トヨタ自動車株式会社 | 半導体モジュールの温度検出装置 |
US6340826B1 (en) * | 1998-03-30 | 2002-01-22 | Agisilaos Iliadis | Infra-red light emitting Si-MOSFET |
US6278138B1 (en) * | 1998-08-28 | 2001-08-21 | Sony Corporation | Silicon-based functional matrix substrate and optical integrated oxide device |
JP3754628B2 (ja) * | 2001-04-25 | 2006-03-15 | 関西電力株式会社 | パワー半導体素子回路及びこれを用いたインバータ装置 |
EP1653507A4 (en) | 2003-07-30 | 2007-09-12 | Kansai Electric Power Co | HEAT-RESISTANT SEMICONDUCTOR |
EP2398049A3 (en) | 2003-08-22 | 2012-12-19 | The Kansai Electric Power Co., Inc. | Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device |
WO2006104063A1 (ja) * | 2005-03-28 | 2006-10-05 | Tokyo Institute Of Technology | 窒化物系深紫外発光素子およびその製造方法 |
JP4153513B2 (ja) | 2005-09-28 | 2008-09-24 | 関西電力株式会社 | 半導体装置の温度測定方法および半導体装置の温度測定装置 |
JP2007288992A (ja) * | 2006-03-20 | 2007-11-01 | Hitachi Ltd | 半導体回路 |
JP5241177B2 (ja) | 2007-09-05 | 2013-07-17 | 株式会社オクテック | 半導体装置及び半導体装置の製造方法 |
JP2010025756A (ja) | 2008-07-18 | 2010-02-04 | Fuji Electric Systems Co Ltd | 温度計測装置及び温度分布計測システム |
WO2012086099A1 (ja) | 2010-12-21 | 2012-06-28 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP5677222B2 (ja) | 2011-07-25 | 2015-02-25 | 三菱電機株式会社 | 炭化珪素半導体装置 |
US9012826B2 (en) * | 2012-01-03 | 2015-04-21 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Optocoupler with multiple photodetectors and improved feedback control of LED |
-
2014
- 2014-04-25 WO PCT/JP2014/061773 patent/WO2014196285A1/ja active Application Filing
- 2014-04-25 JP JP2015521341A patent/JP6252585B2/ja not_active Expired - Fee Related
-
2015
- 2015-11-16 US US14/942,831 patent/US9773936B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20160071998A1 (en) | 2016-03-10 |
WO2014196285A1 (ja) | 2014-12-11 |
US9773936B2 (en) | 2017-09-26 |
JPWO2014196285A1 (ja) | 2017-02-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6252585B2 (ja) | 半導体装置 | |
Winkler et al. | Electroluminescence-based junction temperature measurement approach for SiC power MOSFETs | |
US20130082334A1 (en) | Semiconductor device | |
Lundh et al. | Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor | |
US20090129432A1 (en) | Power semiconductor module with temperature measurement | |
US10734990B2 (en) | Semiconductor apparatus | |
JP4985810B2 (ja) | 半導体装置 | |
US10002862B2 (en) | Solid-state lighting structure with integrated short-circuit protection | |
WO2018086666A1 (en) | Junction temperature measurement in a power semiconductor module | |
US20160153837A1 (en) | Infrared sensor | |
KR20190098199A (ko) | 동작 피드백을 위한 센서 세그먼트를 구비한 발광 다이오드들 | |
US9525063B2 (en) | Switching circuit | |
JP2020013923A (ja) | 半導体装置 | |
JP2677735B2 (ja) | 混成集積回路装置 | |
US10847494B2 (en) | Method of determining thermal impedance of a sintering layer and a measurement system | |
US10132941B2 (en) | Radiation detector and radiation detection apparatus | |
US20220244111A1 (en) | Semiconductor device and temperature measurement method | |
JP6234090B2 (ja) | 半導体装置 | |
JP6507372B2 (ja) | 電気素子と温度検知器とを備えた電子装置 | |
JP2015018861A5 (ja) | ||
JP2012173156A (ja) | 赤外線センサモジュール | |
Kendig et al. | Thermal imaging based on Thermoreflectance addresses the challenges for thermal analysis of today's advanced complex devices | |
JP5779155B2 (ja) | 半導体装置 | |
JP2020525797A (ja) | 発光によりパワーエレクトロニクス部品の冷却路の熱劣化を測定するためのデバイス | |
WO2024029286A1 (ja) | 半導体装置、および、半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161227 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20170523 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170823 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20170831 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171031 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171113 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6252585 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |